Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy


Characterization of Vacancy-Type Defects in Ion Implanted and Annealed SiC by Positron Annihilation Spectroscopy

Anwand, W.; Brauer, G.; Coleman, P. G.; Skorupa, W.

Abstract

New examples of characterization of vacancy-type defects
in ion implanted and annealed SiC by the established technique of slow
positron implantation spectroscopy are presented. In particular, the estimation
of the depths of damaged regions and their change (a) after post-irradiation
annealing, or (b) due to variation of substrate temperature during implantation,
is addressed.

  • Lecture (Conference)
    Konferenz MRS Fall Meeting, Boston, MA, USA, Dec. 1 - 5, 1997

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