Hyperdoping semiconductors by ion implantation

Hyperdoping semiconductors by ion implantation

Zhou, S.


Ion implantation followed by annealing is a well-established method to dope Si and has been maturely integrated with the IC industry production line. Nowadays, the demands for functional materials require a supersaturated doping of semiconductors, i.e., the dopant concentration should be in the percent range. For instance for spintronic applications one needs to prepare magnetic semiconductors which are doped with up to 5-10% Mn [1]. For multiband solar cells one needs to dope semiconductors with deep levels at a concentration large enough to form impurity bands in the bandgap of the semiconductor host material [2]. In this talk, I will make an overview of the activities in my group utilizing ion implantation and short time annealing. These activities include synthesizing full spectrum of III-V:Mn diluted magnetic semiconductors [3-5], optical property modification of GaAs [6-7] and metal-insulator transition in Se/S doped Si.

1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
2. A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997).
3. D. Bürger, S. Zhou, et al., Application of pulsed laser annealing to ferromagnetic GaMnAs, Phys. Rev. B 81, 115202 (2010).
4. S. Zhou, et al., The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge, Appl. Phys. Lett. 96, 202105 (2010).
5. S. Zhou, et al. Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing, Appl. Phys. Express 5, 093007 (2012)
6. S. Prucnal, …, S. Zhou, Temperature stable 1.3 μm emission from GaAs, Optics Express, 20, 26075-26081 (2012).
7. K. Gao, …, S. Zhou, Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing, J. Appl. Phys. 114, 093511 (2013).

Involved research facilities

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  • Lecture (others)
    Invited seminar at Southeast University and Nanjing University, Nanjing, China, 07.-08.10.2013, Nanjing, China

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