Suppressing the cellular breakdown in silicon supersaturated with titanium
Suppressing the cellular breakdown in silicon supersaturated with titanium
Liu, F.; Prucnal, S.; Hübner, R.; Yuan, Y.; Skorupa, W.; Helm, M.; Zhou, S.
Abstract
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively.
Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.
Keywords: ion implantation; solid phase epitaxy; liquid phase epitaxy; Si; cellular breakdown
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23727) publication
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Journal of Physics D: Applied Physics 49(2016), 245104
DOI: 10.1088/0022-3727/49/24/245104
ISSN: 245104
Cited 20 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23727
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