Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions

Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions

Bogusz, A.; Bürger, D.; Skorupa, I.; Schmidt, O. G.; Schmidt, H.


Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO3/Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO3/Nb:SrTiO3 originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO3 thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.

Keywords: YMnO₃; Nb:SrTiO₃; bipolar resistive switching; pn-heterojunction; forward current; reverse current

Involved research facilities

Related publications