Constructing nanoelectronic circuits by top-down and bottom-up strategies


Constructing nanoelectronic circuits by top-down and bottom-up strategies

Kilibarda, F.; Sendler, T.; Deb, D.; Khan, B. M.; Teschome, B.; Erbe, A.

Abstract

The construction of nanoelectronic circuits requires the development of bottom-up strategies, which can be combined with top-down structuring. We show how reconfigurable silicon nanowires are produced using electron-beam lithography and reactive ion etching. Such structures can be used as large-scale electrodes to networks of self-assembled electronics on the nanoscale. As a first step towards the development of nanoscale circuits by self-organization, we demonstrate the construction of nanoscale metallic wires based on metallized DNA origamis. Active building blocks with smallest dimensions on the molecular scale are developed in single molecule contacts. The properties of those junctions need to be characterized. We have demonstrated that the mechanically controllable break junction (MCBJ) technique can be successfully used to determine the properties of electronic transport through single organic molecules and that the participating molecular energy levels and the metal-molecule coupling can be characterized using this technique. Further developments are based on the use of more complex molecules, which can, for example, be used as single molecule switches. We present the first demonstration of a single molecule junction, in which the molecule is switched in situ from the non-conducting off-state to the conducting on-state.

Keywords: silicon nanowire; e-beam lithography; lithography; self-assembled electronics; DNA origami; single molecule; MCBJ; electron transport; molecular switch

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