Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon

Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon

Jäger, H.-U.

• Contribution to external collection
  Simulation of Semiconductor Devices and Processes, vol. 5, editors: S. Selberherr, H. Stippel and E. Strasser, Springer-Verlag Wien, 1993, p. 137-140
  DOI: 10.1007/978-3-7091-6657-4_33

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