Relaxation of radiation damages in silicon planar detectors


Relaxation of radiation damages in silicon planar detectors

Schmidt, B.; Eremin, V.; Ivanov, A.; Strokan, N.; Verbitskaya, E.; Li, Z.

Abstract

The behaviour of radiation induced carbon related defects in high resistivity silicon detectors has been investigated. The defects were introduced by alpha-particle irradiation and the measurements were carried out by the DLTS-technique. The unusual defect behaviour consists in low temperature anealing, including self annealing at room temperature, of the interstitial carbon Ci with a simultaneous increase of the (Ci-Oi)-complex concentration. The kinetic parameters of the process have been determined from the increase of the Ci-centre concentration versus time. Tho annealing velocities have been observed, which ar due to different heat treatments during the detector fabrication process.

  • Contribution to proceedings
    Conference Proceedings Vol. 46, "Large Scale Applications and Radiation Hardness of Semiconductor Detectors", SIF, Bologna, 1994
    DOI: 10.1063/1.357356
    Cited 19 times in Scopus

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