Quantitative analysis of the order of Bi ion induced dot patterns on Ge
Quantitative analysis of the order of Bi ion induced dot patterns on Ge
Böttger, R.; Bischoff, L.; Facsko, S.; Schmidt, B.
We demonstrate that the temperature dependent focused ion beam irradiation of (100) Ge surfaces with 20 keV Bi+ ions leads to variably ordered hexagonal dot pattern. We show that the average information gain about the spatial order can be signicantly increased by image preprocessing transforming the power spectral density into the pair correlation function. Order parameters are derived from the pair correlation function for the comparison of highly ordered patterns.
Keywords: nanodots; nanoholes; pair correlation function; hexagonal order; image analysis
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16018) publication
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EPL - Europhysics Letters 98(2012), 16009
DOI: 10.1209/0295-5075/98/16009
Cited 11 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-16018