Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers

Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers

Preu, S.; Regensburger, S.; Kim, S.; Mittendorff, M.; Winnerl, S.; Malzer, S.; Lu, H.; Burke, P. G.; Gossard, A. C.; Weber, H. B.; Sherwin, M. S.

We report on Terahertz (THz) detectors based on III-V high-electron-mobility field-effect transistors (FET). The detection results from a rectification process that is still highly efficient far above frequencies where the transistor provides gain. Several detector layouts have been optimized for specific applications at room temperature: we show a broadband detector layout, where the rectifying FET is coupled to a broadband logarithmic-periodic antenna. Another layout is optimized for mixing of two orthogonal THz beams at 370 GHz or, alternatively, 570 GHz. A third version uses a large array of FETs with very low access resistance allowing for detection of very short high-power THz pulses. We reached a time resolution of 20 ps.

Keywords: THz detection; field effect transistor; ultrafast detector; mixing

Involved research facilities

Related publications

  • Contribution to proceedings
    6th International Conference on Millimetre Wave and Terahertz Sensors and Technology, 24.-25.09.2013, Dresden, Deutschland
    Proceedings of SPIE 8900 (2013), 89000R
    DOI: 10.1117/12.2029478
    Cited 5 times in Scopus
  • Invited lecture (Conferences)
    6th International Conference on Millimetre Wave and Terahertz Sensors and Technology, 24.-25.09.2013, Dresden, Deutschland

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