Resistive switching of flash lamp crystallized YMnO₃ thin films prepared on Pt/Ti/SiO₂/Si substrates by low temperature pulsed laser deposition

Use of multiferroic oxides as a switching medium presents an opportunity to add the additional or novel functionalities into the switching device. Typically, the growth temperatures of such oxides are above 600°C and so far CMOS compatibility has not been achieved. YMnO₃ exhibits unipolar resistive switching [1] however its high crystallization temperature (above 750°C) imposes difficulties in preparation of thin films on metal-coated substrates. This work presents the results of electrical and structural characterization of YMnO₃ thin films grown on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition at 400°C and crystallized by flash lamp annealing (FLA). It is shown that the FLA process with optimized parameters allows the preparation of polycrystalline YMnO₃ films without deformation of the Pt/Ti electrode and interdiffusion processes in the YMnO₃/Pt/Ti/SiO₂/Si stack.
[1] A. Bogusz et al., IEEE Xplore (2013), DOI:10.1109/ISCDG.2013.656319