Plasmonic Superlensing in Doped GaAs
Plasmonic Superlensing in Doped GaAs
Fehrenbacher, M.; Winnerl, S.; Schneider, H.; Doring, J.; Kehr, S.; Eng, L.; Huo, Y.; Schmidt, O.; Yao, K.; Liu, Y.; Helm, M.
We demonstrate a semiconductor based broadband near-field superlens in the mid-infrared regime. Here, the Drude response of a highly doped n-GaAs layer induces a resonant enhancement of evanescent waves accompanied by a significantly improved spatial resolution at radiation wavelengths around lambda = 20 mu m, adjustable by changing the doping concentration. In our experiments, gold stripes below the GaAs superlens are imaged with a lambda/6 subwavelength resolution by an apertureless near-field optical microscope utilizing infrared radiation from a free-electron laser. The resonant behavior of the observed superlensing effect is in excellent agreement with simulations based on the Drude-Lorentz model. Our results demonstrate a rather simple superlens implementation for infrared nanospectroscopy.
Keywords: Superlens; diffraction limit; surface plasmons; near-field microscopy; semiconductor
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 21805) publication
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Nano Letters 15(2015)2, 1057-1061
DOI: 10.1021/nl503996q
ISSN: 1530-6984
Cited 49 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21805