Gapless broadband terahertz emission from a germanium photoconductive emitter
Gapless broadband terahertz emission from a germanium photoconductive emitter
Singh, A.; Pashkin, A.; Winnerl, S.; Helm, M.; Schneider, H.
Photoconductive terahertz (THz) emitters have been fulfilling many demands required for table-top THz time-domain spectroscopy up to 3-4 THz. In contrast to the widely used photoconductive materials such as GaAs and InGaAs, Ge is a non-polar semiconductor characterized by a gapless transmission in the THz region due to absence of one-phonon absorption. We present here the realization of a Ge-based photoconductive THz emitter with a smooth broadband spectrum extending up to 13 THz and compare its performance with a GaAs-based analogue. We show that the spectral bandwidth of the Ge emitter is limited mainly by the laser pulse width (65 fs) and, thus, can be potentially extended to even much higher THz frequencies.
Keywords: Terahertz emitter; photoconductive emitter; broadband terahertz; germanium photoconductor
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- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 27321) publication
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ACS Photonics 5(2018), 2718-2723
DOI: 10.1021/acsphotonics.8b00460
Cited 33 times in Scopus
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