Stress-controlled zero-field spin splitting in silicon carbide
Stress-controlled zero-field spin splitting in silicon carbide
Breev, I. D.; Poshakinskiy, A. V.; Yakovleva, V. V.; Nagalyuk, S. S.; Mokhov, E. N.; Hübner, R.; Astakhov, G.; Baranov, P. G.; Anisimov, A. N.
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be 0.75 GHz for the V1/V3 centers and 0.5 GHz for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.
Keywords: Silicon carbide; spins; qubits; magnetic resonance; wide bandgap semiconductors; heterointerface
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- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 31817) publication
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Applied Physics Letters 118(2021), 084003
DOI: 10.1063/5.0040936
Cited 8 times in Scopus
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