Liquid metal ion source-produced germanium ions for maskless ion implantation

We report on a prelimery investigation on the maskless implantation of Ge ions into Si for the production of Si _1-x Ge_x microstructures. The technique employs a focused ion beam system using a liquid metal alloy ion source. Closely spaced simple structures down to about 1 µm in width, with well-defined boundaries, have been produced. On some of these structures, spreading resistance measruements were carried out.