Spatially controlled fabrication of telecom single-photon emitters in Si by focused ion beam implantation

Single photon emitters (SPE) are the starting point and foundation for future photonic quantum technologies. We present the laterally
controlled fabrication of single G and W centers in silicon that emit in the telecom O-band. We utilized home built gold-silicon liquid metal
alloy ion sources (LMAIS) in a focused ion beam (FIB) system to perform mask-free implantation of 40 keV Si ions from 6 to 500 ions per
spot. Analysis and confirmation of SPEs has been done in a home-build cryo-photoluminescence setup. We will demonstrate a success rate of
more than 50% and upscaling to wafer-scale. We will also provide an insight and overview on the LMAIS technology and an outlook on
other potential applications of FIB implantation.