TIBUSSII - the first triple beam single ion implantation setup for quantum applications

The ongoing miniaturization has reached a point where dopants, impurities or active impurities reach the quantum limit, making deterministic single ion implantation (SII) indispensable. Moreover, applications in quantum computing, spintronics, and magnonics require at the same time, a very precise spatial placement of these implants. Other requirements for such an implantation system would be a wide range of available ion species, the ability to implant at extremely low fluence as well as low voltage operation.
Our new system, named Tibussii, is expected to address all of these requirements. It will be the first UHV system to include a liquid metal alloy ion source (LMAIS) focused ion beam (FIB) column, a plasma FIB, and a scanning electron microscope (SEM). The 4-nm SEM will be used for damage-free navigation, orientation and inspection. Both FIB columns are mass-separated columns with three Einzellenses, a chicane for neutral particles, and additional blankers and features optimized for single ion implantation.
We will show the current status of the system, which is currently being installed and further developed by HZDR and Orsay Physics. To verify the implantation of single ions, we are currently developing a secondary electron (SE) detection system with a sensitivity close to unity. It will be based on a semiconductor detector and is expected to surpass the detection efficiency of existing systems based on electron multiplication, such as channeltrons or microchannel plates.