All-silicon single photon sources based on deterministic defect engineering in photonic diodes

In this study, we propose the development of a purely silicon-based photonic enhanced single photon emitter that can be optically or electrically pumped. Its design is based on an introduction of near-infrared (NIR) single photon emitting color centers in silicon photonic resonators and diodes by focused ion beams and high energy ion implantation. Color centers will deterministically be implanted in positions of guided high-Q modes to ensure an efficient optical coupling and to enhance the single photon purity, photon indistinguishability and brightness of the device. Implanted species to be tested in the experiments are C and Si that create various NIR single photon emitting centers in silicon.