Highly Efficient Near-Infrared Light-Emitting Diode Based on CdHgSe/ZnCdS Core/Shell Nanoplatelets

Luminescent Quantum dots (QDs) have gathered significant attention over the past decade. Their distinct chemical and optical properties, including size-adjustable light emission, remarkable photostability, and a range of fluorescence colors, have motivated extensive investigations. In recent years, near-infrared (NIR) quantum dots have emerged as a promising avenue for a new generation of optoelectronic devices including infrared detectors and light sources. This study presents the fabrication of NIR-LEDs operating at the o-band optical telecommunication wavelength (1300 nm) using novel CdHgSe/ZnCdS core/shell nanoplatelets with a photoluminescence quantum yield of 70%. The nanoplatelets achieve a remarkable external quantum efficiency (EQE) of 7% in the final device. Notably, the resulting EQE of the fabricated NIR-LED sets a new benchmark for mercury-based QD LEDs.