Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

SiC-surface nanostructures on silicon were produced by 10 keV carbon ion implantation into silicon followed by annealing to 1000°C for 15 s under high-vacuum conditions using a raster-scanned electron beam. Following implantation, an amorphous layer is produced which starts at the surface and extends 65 nm into the substrate. Following annealing, the implanted surface layer remains amorphous but becomes covered with semi-spherical crystalline features up to 300 nm in diameter. The nanocrystals have been confirmed to be SiC which, following nucleation, grow as a result of C and Si diffusion across the oxide free substrate surface during annealing.