Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He implantation

6H-SiC samples subjected to He-implantation and e–-irradiation (Ee=0.2MeV–1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e–-irradiated samples with Ee0.3MeV. Considering the minimum e– energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals.