Deep level defects in 6H silicon carbide

We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photolumniescence. The deep level defects were created by neutron irrdiation, He implantation and electron irradiation with different energies. After analysis of the information gained from the different types of spectroscopy, as well as consideration of the defect creation and annealing behavior under different controlled environments, we provide experimental evidence for the microstructure of certain important deep level defects.