Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

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41396 Publications

Phase Separation and Size Controlled Nanocrystal Formation in GeO

Sahle, C. J.; Sternemann, C.; Nyrow, A.; Schwamberger, A.; Wieland, F.; Zschintzsch, M.; von Borany, J.; Hohl, A.; Tolan, M.

Semiconducting group IV nanocrystals (NC), such as Ge- and Si-NC, have drawn a lot of attention in recent years because of their potential use in new generations of light emitting diodes, fast and stable non-volatile flash memories or highly efficient solar cells. Although intensive research has been conducted regarding the photoluminescence and charge storage properties of readily produced oxide embedded NCs little is known about the phase separation and NC formation process. Here, we present in and ex situ X-ray absorption near edge structure (XANES) spectroscopy data of the temperature induced disproportionation, i.e phase separation of GeOx (x ≈ 1) into Ge and GeO2, which leads to the formation of Ge NCs embedded in a Ge oxide matrix. The formation of size controlled Ge NCs is achieved using a GeOx–SiO2 superlattice approach. The influence of reducing hydrogen in the annealing ambient on the phase separation process and resulting NC density is discussed.

Related publications

  • Lecture (Conference)
    DPG Spring Meeting, Dresden, Germany Symposium: Condensed Matter: Semiconductor Physics, 13.-18.03.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16485
Publ.-Id: 16485


Charge carrier depth profiling at ultra-shallow pn-junctions

Schmidt, B.; Philipp, P.; Zier, M.

According to the continuously shrinking of semiconductor device dimensions the fabrication of ultra-shallow pn-junctions is the essential requirement for modern CMOS technology. Therefore the importance of measurement techniques for dopant depth profiles is rising and the demands in resolution and accuracy are continuously increasing. The established methods like SIMS and spreading resistance profiling become less suitable for these applications because of their disadvantages at measurements close to the silicon surface. The Stepwise Oxidation Profiling (SWOP) is a new measurement technique for ultra shallow boron doped layers with pn-junction depths less than 20 nm. SWOP is based on the continuous anodic oxidation technique (CAOT) proposed by S. Prusin [1] and was applied to boron doped layers formed by ion implantation with rapid thermal annealing and by a new doping technique called flash lamp diffusion (FLD).
[1] S. Prussin, AIP Conference Proceedings 931, 275 (2007).

Keywords: ultra-shallow doping profiles; charge carrier depth profiling

Related publications

  • Invited lecture (Conferences)
    Workshop "Moderne Methoden der Oberflächen- und Dünnschichtanalytik", 30.11.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16484
Publ.-Id: 16484


Nitrogen Implanted GaAs as a Promising Photovoltaic Material

Gao, K.; Prucnal, S.; Skorupa, W.; Helm, M.; Yastrubchak, O.; Gluba, L.; Zhou, S.

As a III-V photovoltaic material, gallium arsenide has promising prospects in aerospace applications and concentrator cells in virtue of its high efficiency, outstanding thermal stability, as well as the resistance to radiation damage.
In order to further increase the efficiency of GaAs based solar cells, one reasonable method is to modify its bandgap thereby the absorption range. A cell with a GaAs base can have several layers of slightly different compositions that allow a cell designer to precisely control the generation and collection of electrons and holes. Alloying is one method to tailor the properties of semiconductor materials for specific applications. The introduction of nitrogen into the GaAs matrix allows to vary the band gap energy in a broad energy range from ~3.4 eV (GaN) to ~0.8 eV (GaN0.15As0.85)1.
Here we present the synthesis of GaNxAs1-x layers using ion implantation and millisecond flash lamp annealing (FLA) techniques. After nitrogen implantation the GaAs wafer is amorphous within the implantation range and N atoms are located mainly in the interstitial position. Post-implantation thermal annealing restores the initial properties of the matrix and leads to the GaNxAs1-x layers formation. The optical properties of the GaNxAs1-x layers were investigated by -Raman spectroscopy, temperature dependence photoluminescence and photoreflectance spectroscopy. It is shown that during milliseconds range FLA nitrogen can be efficiently incorporated into the GaAs matrix. The band gap of nitrogen reach GaAs layer can be easily tuned from 1.34 down to 1 eV by varying the nitrogen fluence and annealing parameters.

Keywords: GaN(x)As(1-x); Ion Implantation; Flash Lamp Annealing

Related publications

  • Poster
    Next Generation Solar Energy, 12.-14.12.2011, Erlangen, Germany

Permalink: https://www.hzdr.de/publications/Publ-16483
Publ.-Id: 16483


Extremely large-scale simulation of a Kardar-Parisi-Zhang model using graphics cards

Kelling, J.; Ódor, G.

The octahedron model introduced recently has been implemented onto graphics cards, which permits extremely large-scale simulations via binary lattice gases and bit-coded algorithms. We confirm scaling behavior belonging to the two-dimensional Kardar-Parisi-Zhang universality class and find a surface growth exponent: β=0.2415(15) on 217×217 systems, ruling out β=1/4 suggested by field theory. The maximum speedup with respect to a single CPU is 240. The steady state has been analyzed by finite-size scaling and a growth exponent α=0.393(4) is found. Correction-to-scaling-exponent are computed and the power-spectrum density of the steady state is determined. We calculate the universal scaling functions and cumulants and show that the limit distribution can be obtained by the sizes considered. We provide numerical fitting for the small and large tail behavior of the steady-state scaling function of the interface width.

Keywords: 05.70.Ln; 05.70.Np; 82.20.Wt

Permalink: https://www.hzdr.de/publications/Publ-16482
Publ.-Id: 16482


Imaging of spin-torque induced magnetization dynamics in lateral spin injector configuration

Buhl, M.; Bernert, K.; Wintz, S.; Henschel, T.; Mattheis, R.; Raabe, J.; Grebing, J.; Potzger, K.; Erbe, A.; Fassbender, J.

Electrical transport characteristics of structures consisting of normal metals and ferromagnetic materials depend strongly on the magneti- zation direction of the ferromagnets. Thus, different spin polarizations can lead to different resistance values of such structures. The absorp- tion of spin polarized electrons in a ferromagnetic material (spin transfer torque) by domain/domain walls leads to magnetization switching or domain wall movement. This can be achieved by driving a current perpendicular to the plane of the ferromagnet (CPP) or in the plane (CIP). In this experiment we investigate the magnetization behavior of ferromagnetic nanopillars located between two lateral spin injectors in the CIP configuration. Using Scanning Transmission X-ray Mircoscopy (STXM) these studies will give more insights in the switching behav- ior and dynamics. Technological applications can mostly be found in memory structures, where the magnetization can be stored and read out.

Keywords: current in plane; CIP; spin transfer torque; STT; scanning transmission x-ray microscopy; STXM; spin polarization; lateral spin injection; ferromagnetism; Cobalt; Co

  • Poster
    DPG Spring Meeting Dresden 2011, 14.-18.03.2011, Dresden, Germany

Permalink: https://www.hzdr.de/publications/Publ-16481
Publ.-Id: 16481


Estimation of carbon ion induced activity distributions with the yield approach

Priegnitz, M.; Enghardt, W.; Laube, K.; Fiedler, F.

Phantom irradiation with pencil-like beams of carbon ions have been performed at GSI Darmstadt. The induced β+-activity has been monitored by means of the dedicated in-beam PET scanner mounted at the irradiation site. On the basis of the yield approach ion beam induced positron emitter distributions have been predicted for these irradiation and activity distributions have been estimated. The comparison of predicted and measured activity profiles provides promising results.

  • Contribution to external collection
    in: GSI Scientific Report 2011, Darmstadt: GSI Helmholtzzentrum für Schwerionenforschung, 2012, 533

Permalink: https://www.hzdr.de/publications/Publ-16480
Publ.-Id: 16480


Manipulation of Ge quantum dot ordering in alumina matrix by deposition conditions

Buljan, M.; Baehtz, C.; Holý, V.; Radić, N.; Roshchupkina, O.; Prucnal, S.; Mücklich, A.; Valeš, V.; Bernstorff, S.; Grenzer, J.

We present an investigation of ordering and PL properties of Ge QDs in an alumina matrix formed by magnetron-sputtering deposition of (Ge+Al2O3)/Al2O3 multilayers. The self-assembly process occurs during the deposition and results with the formation of three-dimensional quantum dots lattices. We investigate the dependencies of the size and ordering properties on the deposition temperature, rotation of the substrate holder and direction of the incoming flux of Ge during the deposition process. The results of the investigation show that tuning the deposition temperature enables manipulation with QD sizes and their mutual distances. We show that the ordering of QDs obtained by deposition on fixed substrate holder leads to the formation of a quantum dot crystal, while the rotation of substrate holder leads to randomly rotated domains with regular ordering. The observed phenomenon is explained by a combination of the surface morphology effect on the nucleation positions of Ge quantum dots with a lateral inhomogeneity of the ad-atom flux. In addition, we show that the resulting quantum-dot lattices have size-dependent PL properties.

Related publications

  • Lecture (Conference)
    DPG-Frühjahrstagung der Sektion Kondensierte Materie, 25.-30.03.2012, Berlin, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16479
Publ.-Id: 16479


In-situ observation of the Self-assembled growth of ordered Ge nanocrystals embedded within a dielectrical matrix

Grenzer, J.; Buljan, M.; Roshchupkina, O.; Baehtz, C.; Holý, V.

We report on an in-situ X-ray investigation of a self-assembled growth of Ge nanocrystals embedded in a dielectrical matrix forming a BCC-like super structure. Such a material could be a key element for the development of a new generation of solar cells extending the spectral range for energy conversion. Using small angle scattering techniques and X-ray diffraction the formation of crystalline Ge nanoparticles during growth and annealing was studied in-situ at the BM20 beam line at that ESRF using a process chamber for magnetron sputter deposition and annealing that can be inserted into the goniometer. A single some 100nm thick Ge+Al2 O3 layer using magnetron sputtering was deposited at an elevated substrate temperature. The self-assembly during growth or subsequent annealing results in the formation of a well ordered three-dimensional BCC-like quantum dot lattice within the whole deposited volume. The formed nanocrystals are very small in size (< 4.0𝑛𝑚 with a very narrow size distribution and a large spatial density. The parameters of the formed super structure can be directly influenced by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusion mediated nucleation and surface morphology effects.

Related publications

  • Lecture (Conference)
    DPG-Frühjahrstagung der Sektion Kondensierte Materie, 25.-30.03.2012, Berlin, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16478
Publ.-Id: 16478


The 25Mg(p,γ)26Al reaction at low astrophysical energies

Strieder, F.; Limata, B.; Formicola, A.; Imbriani, G.; Junker, M.; Bemmerer, D.; Best, A.; Broggini, C.; Caciolli, A.; Corvisiero, P.; Costantini, H.; Dileva, A.; Elekes, Z.; Fülöp, Z.; Gervino, G.; Guglielmetti, A.; Gustavino, C.; Gyürky, G.; Lemut, A.; Marta, M.; Mazzocchi, C.; Menegazzo, R.; Prati, P.; Roca, V.; Rolfs, C.; Rossi Alvarez, C.; Somorjai, E.; Straniero, O.; Terrasi, F.; Trautvetter, H. P.

In the present work we report on a new measurement of resonance strengths in the reaction 25Mg(p,gamma)26Al at E_cm= 92 and 189 keV. This study was performed at the LUNA facility in the Gran Sasso underground laboratory using a 4pi BGO summing crystal. For the first time the 92 keV resonance was directly observed and a resonance strength omega-gamma=(2.9+/-0.6)x10E-10 eV was determined. Additionally, the gamma-ray branchings and strength of the 189 keV resonance were studied with a high resolution HPGe detector yielding an omega-gamma value in agreement with the BGO measurement, but 20% larger compared to previous works.

Permalink: https://www.hzdr.de/publications/Publ-16477
Publ.-Id: 16477


Phase sensitive monitoring of electron bunch form and arrival time in superconducting linear accelerators

Kaya, C.; Schneider, C.; Al Shemmary, A.; Seidel, W.; Kuntzsch, M.; Bhattacharyya, J.; Mittendorff, M.; Evtushenko, P.; Winnerl, S.; Staats, G.; Helm, M.; Stojanovic, N.; Michel, P.; Gensch, M.

In this letter we present a simple approach for monitoring electron bunch form and arrival time combining electro-optic sampling and phase and frequency sensitive signal de-tection. The sensitivity of the technique allows on line diagnostic to be performed down to bunch charges in the femtocoulomb regime. The concept has high impact for the develop-ments of the next generation of 4th Generation X-ray light sources working with long pulse trains or continuous wave mode of operation.

Keywords: electro-optic sampling; arrival time monitor; srf; accelerator; electron bunch diagnostic

Related publications

Permalink: https://www.hzdr.de/publications/Publ-16476
Publ.-Id: 16476


Ungeduldige Forscher träumen mit DREAMS Bestimmung langlebiger Radionuklide mit Beschleunigermassenspektrometrie

Merchel, S.; Akhmadaliev, S.; Pavetich, S.; Rugel, G.

Das Helmholtz-Zentrum Dresden-Rossendorf hat sein Spektrum ionenanalytischer Verfahren um eine weitere hochsensitive Methode erweitert: die Beschleunigermassenspektrometrie (accelerator mass spectrometry = AMS). Die AMS ist prädestiniert zur Bestimmung langlebiger Radionuklide (Halbwertszeit ≥ 100 Jahre). Diese werden nicht, wie allgemein üblich, mittels Zerfallszählung detektiert. Vielmehr bestimmen die „ungeduldigen Forscher“ die noch nicht zerfallenen Nuklide wesentlich effizienter massenspektrometrisch.

Keywords: AMS; Radionuklide

Related publications

  • GIT Labor-Fachzeitschrift 56(2012)Februar, 88-90
    ISSN: 0016-3538

Permalink: https://www.hzdr.de/publications/Publ-16475
Publ.-Id: 16475


Status von AMS–Messungen an DREAMS

Rugel, G.; Akhmadaliev, S.; Merchel, S.; Pavetich, S.

Am Helmholtz–Zentrum Dresden–Rossendorf wurde im Jahr 2010 die Dresdner Accelerator Mass Spectrometry (DREAMS) Anlage mit einem 6 MV Beschleuniger installiert. Für die Routinemessungen mit 10Be und 26Al wurden Vergleichsmessungen mit anderen Laboren vorgenommen.
Ausserdem wurden die verwendeten in–house–Standards an sogenannte Primärstandards ankalibriert. Von Testmessungen an volatilen Elementen wie Chlor (36Cl) berichtet S. Pavetich [1]. AMS–Messungen von 41Ca/Ca–Verhältnissen wurden an Proben aus dem Rückbau nuklearer Anlagen und an Meteoritenproben (siehe [2]) vorgenommen. In Kooperation mit externen Partnern wurden bisher zahlreiche terrestrische Proben auf 10Be und 26Al untersucht.
Danksagung: Wir danken dem Verein für Kernverfahrenstechnik und Analytik Rossendorf e. V. für die Bereitstellung von Probenmaterial.
Ref.: [1] S. Pavetich et al., diese Tagung. [2] S. Merchel et al., diese Tagung.

Keywords: accelarator mass spectrometry; radionuclide; AMS

Related publications

  • Lecture (Conference)
    DPG Frühjahrstagung des Arbeitskreises Atome, Moleküle, Quantenoptik und Plasmen (AMOP), 12.-16.03.2012, Stuttgart, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16474
Publ.-Id: 16474


Cosmogenic nuclides in meteorites

Merchel, S.; Akhmadaliev, S.; Rugel, G.; Cartwright, J. A.; Ott, U.; Faestermann, T.; Fimiani, L.; Korschinek, G.; Ludwig, P.

After successful installation of the Dresden Accelerator Mass Spectrometry (DREAMS) facility [1], determinations of the lighter radionuclides 10Be, 26Al, and 41Ca are now easily attainable in Germany. Accompanied by data for the heavier radionuclides (i.e. 53Mn and 60Fe) that can be measured at the 14 MV tandem at Munich and stable nuclides such as 21,22Ne and 38Ar from noble gas mass spectrometry at MPI Mainz, complete and unique exposure histories of extraterrestrial material can be reconstructed.
For example, recent analyses of the 100th Martian meteorite Ksar Ghilane 002 [2] and four samples from the nickel-rich ataxite Gebel Kamil [3] show interesting features revealing amazing stories.
Ackn.: A. Bischoff and L. Folco are thanked for providing meteorite material and data for bulk chemical data.
Ref.: [1] G. Rugel et al., this meeting. [2] J. Llorca et al., submitted to Meteorit. Planet. Sci.. [3] L. Folco et al., Science 329 (2010) 804.

Keywords: accelerator mass spectrometry; meteorite; radionuclides; noble gases

Related publications

  • Lecture (Conference)
    DPG Frühjahrstagung des Arbeitskreises Atome, Moleküle, Quantenoptik und Plasmen (AMOP), 12.-16.03.2012, Stuttgart, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16473
Publ.-Id: 16473


The 100th Martian meteorite Ksar Ghilane 002 (KG 002): Noble gases and radionuclides point to a strong relationship with Los Angeles

Cartwright, J. A.; Merchel, S.; Rugel, G.; Fimiani, L.; Ludwig, P.; Llorca, J.; Ott, U.

Ksar Ghilane 002 (KG 002) is the 100th Martian meteorite to be catalogued by the Meteoritical Bulletin, and the first to be recovered from Tunisia (January, 2010). The single stone, weighing 538 g, is a coarse-grained basaltic shergottite that shows remarkable petrological and compositional similarities with evolved shergottite Los Angeles [1,2].
By performing noble gas and radionuclide analysis on KG 002, we aim to contribute further in determining the extent of its similarity with Los Angeles. In particular, we investigate the potential for a launch-pairing of these two meteorites by comparison of cos-mic ray exposure (CRE) ages, where preferred CRE ages for Los Angeles of 3.10 ± 0.70 and 3.35 ± 0.30 Ma have been previously suggested [3,4].
References: [1] Llorca J. et al. (subm.) MAPS. [2] Roszjar J. et al. (2011) LPSC XLIII, this conf. [3] Terribilini, D. et al. (2000) MAPS, 35:A155-A156. [4] Eugster, O. et al. (2002) MAPS, 37:1345-1360.

Keywords: accelerator mass spectrometry; meteorite; noble gases; radionuclides

Related publications

  • Poster
    43rd Lunar and Planetary Science Conference, 19.-23.03.2012, The Woodlands, Texas, United States

Permalink: https://www.hzdr.de/publications/Publ-16472
Publ.-Id: 16472


Shock wave synthesis of γ-Si3[O,N]4 in the new Freiberg blasting facility under different conditions

Renno, A. D.; Schlothauer, T.; Schwarz, M. R.; Heide, G.; Kroke, E.

The new subterranean blasting facility at the TU Bergakademie Freiberg allows experiments at elevated capacities of 20 kg C4-equivalent. The new installation permits the investigation of phase transitions of γ Si3N4 under dynamic loading.
We studied the influence of plate thickness (shock duration) and different precursor-pressure powder (Cu, NaCl) mixtures at charge masses between 2000 and 20.000 g C4.
Systematic studies showed that the Mach-reflection (so called “upstreaming jetting phenomena”) is of vital importance for the synthesis success, due to the fact that the T-p ratio will increase dramatically [Milyavskii et al., 2006].
We synthesized pure γ-Si3[O,N]4 from H-bearing precursors at pressures > 25 GPa [Schlothauer et al., 2011].
The phase transition Si2N2NH into γ-Si3[O,N]4 is completely reconstructive and requires a high temperature-pressure-ratio of 176 K/GPa at pressures up to 35 GPa. Despite the high energy density during the shock wave synthesis process it will be inevitable to prepare the samples under an inert nitrogen atmosphere.

Keywords: Shock wave experiments; Mineral Physics

  • Poster
    AGU Fall Meeting 2011, 05.-09.12.2011, San Francisco, USA

Permalink: https://www.hzdr.de/publications/Publ-16471
Publ.-Id: 16471


Magnetic model for A2CuP2O7 (A = Na, Li): One-dimensional versus two-dimensional behavior

Lebernegg, S.; Tsirlin, A. A.; Janson, O.; Nath, R.; Sichelschmidt, J.; Skourski, Y.; Amthauer, G.; Rosner, H.

We report magnetization measurements, full-potential band-structure calculations, and microscopic modeling for the spin-1/2 Heisenberg magnets A2CuP2O7 (A = Na, Li) involving complex Cu-O-O-Cu superexchange pathways. Based on a quantitative evaluation of the leading exchange integrals and the subsequent quantum Monte Carlo simulations, we propose a quasi-one-dimensional magnetic model for both compounds, in contrast to earlier studies that conjectured on a two-dimensional scenario. The one-dimensional nature of A2CuP2O7 is unambiguously verified by magnetization isotherms measured in fields up to 50 T. The saturation fields of about 40 T for both Li and Na compounds are in excellent agreement with the intrachain exchange J1 is about 27 K extracted from the magnetic susceptibility data. The proposed magnetic structure entails spin chains with the dominating antiferromagnetic nearest-neighbor interaction J1 and two inequivalent, nonfrustrated antiferromagnetic interchain couplings of about 0.01J1 each. A possible long-range magnetic ordering is discussed in comparison with the available experimental information

Permalink: https://www.hzdr.de/publications/Publ-16470
Publ.-Id: 16470


Singlet–Triplet Excitations and High-Field Magnetization in CuTe2O5

Wang, Z.; Schmidt, M.; Goncharov, Y.; Skourski, Y.; Wosnitza, J.; Berger, H.; Krug Von Nidda, H.-A.; Loidl, A.; Deisenhofer, J.

By measuring the THz electron spin resonance (ESR) transmission spectra and high-field magnetization on the spingapped system CuTe2O5, we identified the singlet–triplet excitations in the dimerized non-magnetic ground state. The determined spin-gap value of hnu0 = 4.94 meV at the Gamma point (Q = 0) is significantly smaller than the strongest antiferromagnetic exchange interaction between the Cu ions predicted by theoretical investigations. We also observed the critical field Ha* c1 = 37.6 T for H perp bc-plane and Hbc c1 = 40.6 T for H parallel bc-plane at the onset of non-zero magnetization, consistent with the gap value and corresponding anisotropic g-factors determined previously. The observed singlet–triplet excitations in Faraday and Voigt configurations suggest a mixing of the singlet state with the Sz = 0 triplet state and the Sz = plus/minus 1 triplet states, respectively, due to the Dzyaloshinskii–Moriya (DM) interaction with a DM vector perpendicular to the crystalline bc-plane.

Permalink: https://www.hzdr.de/publications/Publ-16469
Publ.-Id: 16469


Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors

Weickert, F.; Nicklas, M.; Schnelle, W.; Wosnitza, J.; Leithe-Jasper, A.; Rosner, H.

We present the first study of codoped iron-arsenide superconductors of the 122 family (Sr/Ba)1-xKxFe2-yCoyAs2 with the purpose to increase the upper critical field Hc2 compared to single doped Sr/BaFe2As2 materials. Hc2 was investigated by measuring the magnetoresistance in high pulsed magnetic fields up to 64 T. We find, that Hc2 extrapolated to T = 0 is indeed enhanced significantly to approx 90 T for polycrystalline samples of Ba0:55K0:45Fe1:95Co0:05As2 compared to approx 75 T for Ba0.55K0.45Fe2As2 and BaFe1.8Co0.2As2 single crystals. Codoping thus is a promising way for the systematic optimization of iron-arsenic based superconductors for magnetic-field and high-current applications.

Permalink: https://www.hzdr.de/publications/Publ-16468
Publ.-Id: 16468


Research at Hihgh Magnetic Fields - Activities at the Dresden High Magnetic Field Laboratory

Wosnitza, J.

  • Invited lecture (Conferences)
    Science Vision for the European Spallation Source, 10.-12.10.2011, Bad Reichenhall, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16467
Publ.-Id: 16467


The impact of the Äspö ground water bacterium Pseudomonas fluorescens on the speciation of plutonium

Moll, H.; Lütke, L.; Sachs, S.; Schmeide, K.; Bernhard, G.

Bacteria are widely distributed in nature and they can strongly influence the behaviour of actinides in the environment. This presentation focuses on the unknown interaction between plutonium (Pu(VI) and Pu(IV)-polymers) and cells of the ground water bacterium Pseudomonas fluorescens isolated from the Äspö site, Sweden. Accumulation experiments were performed in order to obtain information about the amount of Pu bound by the cells in dependence on the contact time and the initial plutonium concentration. We used solvent extraction and UV-vis-NIR absorption spectroscopy to determine the speciation of Pu oxidation states. The Pu oxidation state distributions will be discussed in detail and a model which describes the ongoing processes in the system Pu–P. fluorescens will be presented.

Keywords: Plutonium; Bacteria; Speciation

  • Contribution to proceedings
    Plutonium Futures - The Science 2012, 15.-20.07.2012, Cambridge, UK
  • Lecture (Conference)
    Plutonium Futures - The Science 2012, 15.-20.07.2012, Cambridge, UK

Permalink: https://www.hzdr.de/publications/Publ-16466
Publ.-Id: 16466


Strain Relaxation and Vacancy Creation in Thin Platinum Films

Gruber, W.; Chakravarty, S.; Baehtz, C.; Leitenberger, W.; Bruns, M.; Kobler, A.; Kübel, C.; Schmidt, H.

Synchrotron based combined in situ x-ray diffractometry and reflectometry is used to investigate the role of vacancies for the relaxation of residual stress in thin metallic Pt films. From the experimentally determined relative changes of the lattice parameter a and of the film thickness L the modification of vacancy concentration and residual strain was derived as a function of annealing time at 130 °C. The results indicate that relaxation of strain resulting from compressive stress is accompanied by the creation of vacancies at the free film surface. This proves experimentally the postulated dominant role of vacancies for stress relaxation in thin metal films close to room temperature.

Keywords: Synchrotron radiation; Pt thin films; reflectometry

Related publications

Permalink: https://www.hzdr.de/publications/Publ-16465
Publ.-Id: 16465


Imaging measurement techniques for the LIMMCAST continuous casting model

Franke, S.; Wondrak, T.; Räbiger, D.; Timmel, K.; Büttner, L.; Czarske, J.; Eckert, S.; Gerbeth, G.

The properties of the mould flow are significant for the casting quality at the continuous casting of steel. To investigate the flow behaviour model experiments were performed using liquid metal melts with a low melting temperature. Thereto adequate imaging measuring techniques for liquid metal flows are required. We will present three methods: the Ultrasound Doppler Velocimetry (UDV) and the Contactless Inductive Flow Tomography (CIFT) to measure two-dimensional velocity fields in the mould and the Mutual Inductance Tomography (MIT) to measure the two-phase flow distribution in the SEN. The UDV method by means of ultrasonic array transducers provides spatial- and time-resolved measurements at a measuring area of 24 × 24 voxel with frame rates up to 30 fps. A method based on the application of ultrasonic wave guides is presented to extend the limited temperature range of conventional ultrasonic transducers (up to 200°C) to temperatures up to about 700°C. CIFT facilitate measurements of the global flow structure with frame rates of 1 fps. Due to its feature as a contactless measuring method it can be applied at facilities operating at room temperature as well as much higher temperatures. The MIT as well a contactless measuring principle may resolve the two-phase flow distribution in the SEN with up to 20 fps. All three methods were successfully applied at a small-scale continuous casting model based on the metal alloy GaInSn liquid at room temperature and are currently adapted to a large-scale casting model applying the alloy BiSn in a temperature range of 200°C to 350°C.

Keywords: Ultrasound Doppler Velocimetry; Contactless Inductive Flow Tomography; Mutual Inductance Tomography; continuous casting; liquid metal model; mould flow; flow measurements; two-phase flow

  • Lecture (Conference)
    Symposium on Simulation and Modeling of Metallurgical Processes "SymSim", 07.-10.12.2011, Planner Alm, Österreich

Permalink: https://www.hzdr.de/publications/Publ-16464
Publ.-Id: 16464


Classification of bubbles in vertical gas–liquid flow: Part 1 – An analysis of experimental data

Qi, F. S.; Yeoh, G. H.; Cheung, S. C. P.; Tu, J. Y.; Krepper, E.; Lucas, D.

In consideration of the practical importance regarding the application of gas–liquid flow in a vertical pipe and the quest towards the development of more robust physical models to accurately predict the essential interfacial parameters of the two-phase flow, comprehensive analysis of the characteristics and phase distribution patterns of such a flow have been performed on both experimental measurements and theoretical predictions. In this first part, analysis of experimental data in a large diameter pipe with an inner diameter of 195.3 mm via the wire-mesh senor measuring technique was presented. The experiments were performed at the TOPFLOW facility of Helmholtz-Zentrum Dresden-Rossendorf. In the present paper, measurements of local interfacial parameters which included the void fraction, volume equivalent bubble diameter, bubble size distribution and interfacial velocities were discussed. Test points covering flow regimes from bubbly to cap to slug to churn-turbulent flow were selected to investigate the flow of different bubble shapes and sizes and the significant bubble coalescence and break-up mechanism throughout the large vertical pipe. The radial and axial evolutions of the local flow structure were interpreted in terms of the classifications of different groups of bubbles (Group-1 and Group-2). In addition, the phase distribution patterns were analyzed through the concept of skewness, which essentially identified two fundamental patterns, namely, wall peak and core peak. In general, Group-1 bubbles being smaller spherical bubbles have shown to exhibit a wall peaking distribution while Group-2 bubbles being larger non-spherical bubbles corresponded to a core peaking distribution. The classification of bubbles that have been performed in this present study can be employed for the development of bubble coalescence and break-up mechanistic kernels and other interfacial force closure models for a two bubble group approach in the context of computational fluid dynamics.

Keywords: Gas–liquid flow; Large diameter pipe; Phase distribution patterns; Skewness

Permalink: https://www.hzdr.de/publications/Publ-16463
Publ.-Id: 16463


Joint Project: Interaction and transport of actinides in natural clay rock with consideration of humic substances and clay organics - Investigations of temperature dependence of complexation and sorption of trivalent actinides (Am(III)) in the system actinide-NOM-natural clay rock-aquifer (Final Report BMWi Project No.: 02 E 10417)

Acker, M.; Barkleit, A.; Müller, M.; Schott, J.; Bernhard, G.

The main objective of this project was to study the interaction processes between An(III)/Ln(III), (representated by Am(III) and Eu(III), respectively), organic model ligands, and Opalinus Clay at elevated temperature (until 80°C). The thermodynamic data (log, ΔG, ΔH and ΔS) for the complexation and sorption processes have been derived and led to an enhancement of the thermodynamic database by data at elevated temperatures.

The complexation of Am(III)/Eu(III) with small organic ligands (pyromellitic, salicylic, lactic, acetic, citric, and tartaric acid) that serve as model ligands for natural organic material, like humic substances or clay organic was investigated by temperature dependent UV-Vis and time-resolved laser-induced fluorescence spectroscopy (TRLFS).
For the first time, the UV-Vis absorption spectroscopy utilizing a Long Path Flow Cell (LPFC) has been established for speciation analysis of Am(III) at trace concentrations. A detection limit of 5*10-9 mol/l-1 Am(III) was determined with an 2 m LPFC.
Several Am(III)/Eu(III)-organic ligand complexes were spectroscopically and thermodynamically characterized. General, all studied complexation reactions are endothermic and driven by entropy.
Furthermore, the interaction of Eu(III) with pyromellitc acid (1,2,4,5-benzene-tetracarboxylic acid) had been studied in detail with additional methods like isothermal titration calorimetry (ITC) and Fourier-transform infrared spectroscopy in combination with density function theory (DFT) calculations. At elevated temperature and higher concentration (> 5 mM Eu(III) and pyromellitic acid) a temperature-dependent polymerization was observed. It had been shown that predominantly chelating coordination with two carboxylic groups in the monomeric complex and monodentate binding of a single carboxylic group in the polymeric complex of the polycarboxylate with Eu(III) occurs.

The sorption of Eu(III) on Opalinus Clay was investigated in absence and presence of the small organic ligands citric and tartaric acid at different temperatures and under synthetic pore water conditions (I = 0.4 M, pH = 7.6) by batch experiments. Time-resolved laser-induced fluorescence spectroscopy was used for analysis of the Eu(III) speciation in the binary system Eu(III)-Opalinus Clay and ternary system Eu(III)-Opalinus Clay-small organic ligand under pore water conditions.
The Eu(III) sorption was found to increase generally with temperature in a considerably endothermic reactions with enthalpies of about 50 kJ/mol 1. In presence of tartrate or citrate the Eu(III) sorption decreases with increasing ligand concentration due to a complex formation of Eu(III) in solution. This complex formation was verified by TRLFS investigations. The detected Eu(III) surface species on Opalinus Clay with a luminescence lifetime of (201  9) µs is no influenced by the presence of the studied organic ligands.

Keywords: Americium; Europium; Opalinus clay; organic model ligands; complexation; sorption; elevated temperature; thermodynamics

  • Other report
    Dresden: TU Dresden, 2011
    49 Seiten

Permalink: https://www.hzdr.de/publications/Publ-16462
Publ.-Id: 16462


In-situ X-ray Scattering: A Tool for Investigation of Nanostructure Formation

Grenzer, J.

Nowadays, the development of new materials is often associated with specific properties of functionalized nanostructures. X-ray investigations are a very important tool to find the link between the functional (magnetism, luminescence) and the corresponding structural properties (size, orientation etc.) that are generating this function and to explain the underlying physical processes. This knowledge makes it possible to design new materials with specific properties. We report on (in-situ) X-ray studies that are focused on ion-beam sputtering techniques (IBS) creating nanostructures either by ion beam erosion or by sputter deposition processes.
With IBS the roughness of solid surfaces can be modified on lateral scales of a few nanometers to micrometers or even further. In a defined parameter set IBS leads to a surface smoothing, whereas at other parameters the roughness is increased, leading eventually to periodic patterns, i.e. ripple and hexagonal dot patterns. In-situ measurements of the surface roughness during IBS of GaSb surfaces give insight into the detailed mechanisms; especially, if the early time regime is addressed. Modern synchrotron sources give us the possibility to study the nanostructure growth during deposition. A sputtering chamber mounted on a six-circle goniometer allows an insight into the growth of nanostructures using different scattering and diffraction methods. We have investigated the growth of FePt islands incorporated into an Ag matrix. The high brilliance of the synchrotron source had made it possible to obtain a reliable GISAXS signal and to control the cluster morphology during growth even at the initial stage. By depositing 6 nm Ag layer directly on the SiO2 substrate, we obtained well defined FePt clusters. FePt nanoislands have been achieved without degradation of the magnetic properties. We obtained a magnetic asymmetry with magnetic moments preferentially oriented parallel to the layer surface.

Related publications

  • Invited lecture (Conferences)
    8th Autumn School on X-ray Scattering from Surfaces and Thin Layers, 04.-07.10.2011, Smolenice Castle, Slovakia

Permalink: https://www.hzdr.de/publications/Publ-16459
Publ.-Id: 16459


Silicon ripple structures produced by Xe+ irradiation at medium energies

Grenzer, J.; Hanisch, A.; Facsko, S.; Mücklich, A.; Biermanns, A.; Pietsch, U.

We report on the evolution of wave-like nanopatterns induced by Xe+ ion irradiation at high fluences in an energy range between 5 keV and 70 keV. By means of atomic force microscopy a statistical analysis of the ripple amplitude and wavelength was carried out showing that the periodicity and the amplitude of the rippled structures follow a linear dependence on the energy.
However, the evolution of the rippled patterns clearly differs for the lower and higher ion energies. For energies below 25 keV we observed almost no fluence dependence of the wavelength and amplitude in the investigated range of 1...8·1017 cm-2. But for energies above 25 keV and fluences above 1·1017 cm-2 coarsening was found. At energies larger than 50 keV Xe the ripple structures display a saturation regime for fluences higher than 5·1017 cm-2.
Investigations with cross-sectional high resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed the appearance of Xe filled inclusions at ion energies above 25 keV. This result correlates with an almost stable ratio of the ripple wavelength to the ripple amplitude of about 30 occurring above a threshold fluence of 2·1017 cm-2 and above 25 keV.
These results indicate that there is a certain threshold energy and fluence above which a stable form of the investigated wave-like structure is build up. This is possibly caused by the formation of noble gas inclusions at higher ion energies.

Related publications

  • Poster
    International Workshop on "NANOSCALE PATTERN FORMATION AT SURFACES", 18.-22.09.2011, El Escorial, Spain

Permalink: https://www.hzdr.de/publications/Publ-16458
Publ.-Id: 16458


Structural investigations of ion beam doped silicon nanowires

Grenzer, J.; Roshchupkina, O.; Kögler, R.; Das Kanungo, P.; Werner, P.

For the development of nano-optical devices nano wires (NW) are of emerging interest. One of the most important steps in the fabrication of Si devices is doping using ion beam implantation. However, this may lead to a distortion of the NW’s crystalline structure or even to an amorphization. A subsequent annealing procedure is necessary to recover the crystalline structure. The advantage of implanted Si NW’s is that the electrical conductivities are significantly higher than MBE-grown in-situ doped ones [1]. NW’s of about 100nm in diameter and 100..400 nm in length, nominally undoped, were MBE grown on Si(111) using Au as a growth-initiator. We followed the structural changes of the NW’s caused by implantation and annealing. We used rapid thermal annealing up to a temperature of 1100∘ C of about 30 seconds to remove a possible damage induced by implantation. Diffraction experiments were carried out at the ID01 ESRF beamline using a microfocused X-ray beam in combination with a 2D detector to obtain 3D diffraction patterns. Our experiments have shown that defect structure and form of the investigated NW’s change after implantation and annealing.

Related publications

  • Lecture (Conference)
    DPG Spring Meeting, 13.-18.03.2011, Dresden, Germany

Permalink: https://www.hzdr.de/publications/Publ-16457
Publ.-Id: 16457


Serpent Monte Carlo code: new methods for few-group cross section generation

Fridman, E.; Leppänen, J.

The Serpent Monte Carlo (MC) code has been developed since 2004, and publicly distributed since 2009. One of the main applications for the code is the production of homogenized multi-group constants, which can still be considered a relatively unexplored field for the MC method. The calculation techniques required for this task have been implemented and refined during the seven years of Serpent development, with valuable feedback, contribution and new ideas from the user community. This paper presented two such topics: homogenization in leakage-corrected criticality spectrum and group constant generation in reflector regions. The implemented methods were verified and demonstrated by numerical examples. It is concluded that the new methodology improves the results of the deterministic calculation, and paves the way for Monte Carlo based group constant generation.

  • Contribution to proceedings
    Jahrestagung Kerntechnik 2012, 22.-24.05.2012, Stuttgart, Germany
  • Lecture (Conference)
    Jahrestagung Kerntechnik 2012, 22.-24.05.2012, Stuttgart, Germany

Permalink: https://www.hzdr.de/publications/Publ-16456
Publ.-Id: 16456


Chemical fingerprinting of Hungarian and Slovakian obsidian using three complementary analytical techniques

Eder, F. M.; Neelmeijer, C.; Pearce, N. J. G.; Sterba, J. H.; Bichler, M.; Merchel, S.

The natural volcanic glass obsidian is one of the classical objects of archaeometrical analyses. Reliable provenancing by means of its highly specific chemical composition, the “chemical fingerprint”, can provide information about economy, policy and the social system of ancient societies.

Although Mediterranean obsidian have mainly been the focus of characterization since the pioneer work of Cann and Renfrew (1964), provenancing of Central and Eastern Europe obsidian sources attracts increasing attention in the past decades. Fingerprinting of Hungarian and Slovakian obsidian sources is of great interest especially for Central European sites where obsidian has been widely used (Williams-Thorpe et al., 1984, Kasztovszky et al., 2008, Biró, 2009).

The application of three complementary analytical techniques on the same set of raw material samples allows both, a more complete characterization of obsidian sources and a comparison of analytical results. The aim of this multi-methodical approach is to apply three different analytical methods, in particular:

  • Instrumental Neutron Activation Analysis (INAA),
  • Ion Beam Analysis (IBA) comprising of Particle Induced X-ray Emission (PIXE) and Particle Induced Gamma-ray Emission (PIGE)
  • Laser Ablation-Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS)

to detect a maximum element spectrum and to compare element concentrations determined with at least two analytical techniques. This way a check of self-consistency of analytical results is possible. Furthermore, it allows the identification of a maximum of compositional differences between Hungarian and Slovakian sources by revealing the most characteristic “chemical fingerprint” composed of more than 40 elements.

For this study, NAA, IBA and LA-ICP-MS measurements are scheduled to be applied to 25 raw material samples from sources from Hungary and Slovakia in cooperation with the Natural History Museum Vienna (Hammer, V. and Seemann, R., Department of Mineralogy and Petrography) and the Vienna Lithothek (Trnka, G., Department of Prehistoric and Protohistoric Archaeology).

Up to now, IBA studies have already been carried out using the external 4 MeV proton beam of the 6 MV Tandem accelerator of the Ion Beam Centre of Helmholtz-Zentrum Dresden-Rossendorf. Further NAA investigations will be performed at the TRIGA Mark II 250 kW research reactor of the Atominstitut in Vienna. LA-ICP-MS measurements will be conducted using the Thermo Element 2 ICP-MS coupled to an ArF gas Excimer laser system at the Aberystwyth University.

CANN, J.R. AND RENFREW, C, 1964. The characterization of obsidian and its application to the Mediterranean Region. Proceedings of the Prehistoric Society 30, 111-131.

WILLIAMS-THORPE, O., WARREN, S.E. and NANDRIS, J.G., 1984. The distribution and provenance of archaeological obsidian in central and eastern Europe. Journal of Archaeological Science 11, 183-212.

KASZTOVSZKY, Z., BIRÓ, K., MARKÓ, A. and DOBOSI, V., 2008. Prompt gamma activation analysis for non-destructive characterization of chipped stone tools and raw materials. Journal of Radioanalytical and Nuclear Chemistry 278, 293-298.

BIRÓ, K.T., 2009. Sourcing Raw Materials for Chipped Stone Artifacts: The State-of-the-Art in Hungary and the Carpathian Basin. In: Adams, B. and Blades, B.S. (Eds.) Lithic Materials and Paleolithic Societies (eds B. Adams and B. S. Blades), Wiley & Blackwell, 47-53.

Keywords: ceramics; glazes; glass and vitreous materials; ion beam analysis; neutron activation analyis; ICP-MS

Related publications

  • Poster
    39th International Symposium on Archaeometry: “50 years of ISA”, 28.05.-01.06.2012, Leuven, Belgium

Permalink: https://www.hzdr.de/publications/Publ-16455
Publ.-Id: 16455


Entwicklung von Feldbusknoten für den wissenschaftlichen Gerätebau

Kaever, P.

Mit der Entwicklung spezialisierter Feldbusknoten lässt sich eine für den wissenschaftlichen Gerätebau in vielen Fällen sinnvolle Aufteilung zwischen selbst entwickelten und kommerziell verfügbaren Komponenten unter konsequenter Nutzung vorhandener Automatisierungssysteme erreichen. Im Folgenden wird vorgestellt, welche Schritte dabei erforderlich sind und welche Möglichkeiten sich mit diesem Ansatz ergeben.

Keywords: Automatisierung; Feldbus; Feldbusgeräte; wissenschaftlicher Gerätebau

  • Open Access Logo Contribution to proceedings
    102. Tagung der Studiengruppe elektronische Instrumentierung im Frühjahr 2011, 21.-23.03.2011, Darmstadt, Deutschland
    Peter Göttlicher (DESY): 102. Tagung der Studiengruppe elektronische Instrumentierung im Frühjahr 2011, Hamburg: Deutsches Elektronen-Synchrotron, 978-3-935702-58-4, 213-223

Permalink: https://www.hzdr.de/publications/Publ-16454
Publ.-Id: 16454


Segregation-induced hardening by dislocation loops in bcc FeCr alloys

Terentyev, D.; Bergner, F.; Bonny, G.; Zhurkin, E. E.; Malerba, L.

Enrichment of Cr on both <100> and ½<111> dislocation loops has been reported under ion, electron and neutron irradiation in Fe-xCr with x=9-15 at.%. Cr enrichment in Fe-9,12Cr around edge of loops is predicted by atomistic Monte Carlo simulations. MC simulations indicate that Cr clustering on loops disappears above equilibrium solubility limit (ΔT~100-150K). MD simulations indicate that Cr enrichment at loops enhances their strength in a range of specific loading conditions.

  • Lecture (Conference)
    16th Meeting of the International Group on Radiation Damage Mechanisms in Pressure Vessel Steels (IGRDM-16), 04.-09.12.2011, Santa Barbara, USA
  • Contribution to proceedings
    IGRDM-16, 04.-09.12.2011, Santa Barbara, USA
    Proceedings of IGRDM-16

Permalink: https://www.hzdr.de/publications/Publ-16453
Publ.-Id: 16453


Small-angle neutron scattering in neutronirradiated Fe-Cr alloys

Bergner, F.; Heintze, C.; Ulbricht, A.; Kuksenko, S.; Pareige, C.; Pareige, P.

The objectives are to report data for Fe2.5Cr, Fe5Cr, Fe9Cr, Fe12Cr irradiated up to 0.06, 0.6, 1.5 dpa; to calculate nuclear scattering from features reported by Kuksenko et al. based on APT; and to compare with measured nuclear SANS. We have found that the NiSi-enriched clusters observed by APT are not responsible for the observed SANS intensities. Possible sources of the apparent discrepancy between SANS and APT for Fe12Cr are discussed. The dominant source is the overestimation of the Fe fraction in the Cr-rich clusters by APT.

  • Lecture (Conference)
    16th Meeting of the International Group on Radiation Damage Mechanisms in Pressure Vessel Steels (IGRDM-16), 04.-09.12.2011, Santa Barbara, USA
  • Contribution to proceedings
    IGRDM-16, 04.-09.12.2011, Santa Barbara, USA
    Proceedings of the IGRDM-16

Permalink: https://www.hzdr.de/publications/Publ-16452
Publ.-Id: 16452


SANS applied to RPV weld material from decommissioned NPP Greifswald taking into account atom probe data

Bergner, F.; Ulbricht, A.; Viehrig, H.-W.; Wagner, A.; Nishida, K.; Soneda, N.

SANS data are presented for as-irradiated, irradiated and annealed, and re-irradiated weld material from units 4, 2, and 1, respectively, of the decommissioned NPP Greifswald. The unirradiated reference condition is represented by a data scatter band obtained for several unirradiated weld materials of the same kind. The effects or irradiation, annealing and re-irradiation are worked out. Comparison of the SANS data with available atom probe data for the same material from unit 4 indicates an apparent discrepancy between both methods. Possible reasons are carefully discussed. The dominant reason is the overestimation of the Fe fraction in the irradiation-induced clusters by APT due to trajectory overlaps.

  • Lecture (Conference)
    16th Meeting of the International Group on Radiation Damage Mechanisms in Pressure Vessel Steels (IGRDM-16), 04.-09.12.2011, Santa Barbara, USA
  • Contribution to proceedings
    IGRDM-16, 04.-09.12.2011, Santa Barbara, USA
    Proceedings of IGRDM-16

Permalink: https://www.hzdr.de/publications/Publ-16451
Publ.-Id: 16451


Solved and unsolved issues in the interpretation of SANS results obtained for neutron-irradiated Fe-Cr alloys

Bergner, F.; Heintze, C.; Ulbricht, A.

Full set of nuclear and magnetic SANS data for a number of four Cr levels, three dpa levels each, is presented. The results are given in terms of concentration, size and A-ratio as function of Cr and dpa. A consistent understanding is obtained for Fe12Cr in terms of alpha‘ phase formation. For Fe2.5Cr, Fe5Cr and Fe9Cr, the presence of a second kind of scatterers is indicated, to which impurity elements such as Ni, Si, and C must contribute. The nature of scatterers in Fe2.5Cr, Fe5Cr and Fe9Cr is among the unsolved issues. Candidates are Cr-C-enriched clusters and/or Cr-Si-P-Ni-enriched clusters detected by atom probe tomography. There is an inconsistency between composition reported for APT and composition assumed in the SANS analysis with respect to Cr/Fe-fraction.

  • Lecture (Conference)
    19th Workshop on Multiscale Modelling and Basic Experiments of Iron-Chromium Alloys for Nuclear Applications, 08.-09.11.2011, Sala, Schweden

Permalink: https://www.hzdr.de/publications/Publ-16450
Publ.-Id: 16450


Modification to the central-cell correction of germanium acceptors

Drachenko, O.; Schneider, H.; Helm, M.; Kozlov, D.; Gavrilenko, V.; Wosnitza, J.; Leotin, J.

In this paper, we report a correction to the model potential of the Ga acceptor in germanium, evidenced by high-magnetic-field photoconductivity measurements. We found that under high magnetic fields the chemical shift of the binding energy of Ga acceptors vanishes, contrary to the results given by the generally accepted theory. To fit our data, we found that the central-cell correction should contain a repulsive part (i.e., it must be bipolar), in contrast to the purely attractive screened point-charge potential widely used in the literature.

Keywords: Germanium; acceptor; chemical shift; central-cell correction; high magnetic field

Related publications

Permalink: https://www.hzdr.de/publications/Publ-16449
Publ.-Id: 16449


Die tertiären Vulkanite Sachsens - neue mineralogische und geochemische Daten zu 'Alten Bekannten'

Renno, A. D.

Keywords: petrology; mineralogy; geochemistry; Saxony; Erzgebirge; Lausitz; Tertiary volcanic rocks

  • Lecture (others)
    Dresdner Geowissenschaftliche Kolloquien, 10.01.2012, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16448
Publ.-Id: 16448


The trigonal nodal SP3 method of the code DYN3D — verification on pin level

Duerigen, S.; Bilodid, Y.; Fridman, E.

The neutronics model of the nodal reactor dynamics code DYN3D developed for 3D analyses of steady states and transients in Light-Water Reactors has been extended by a simplified P3 (SP3) neutron transport option – to overcome the limitations of the diffusion approach at regions with significant anisotropy effects. To provide a method being applicable to reactors with hexagonal fuel assemblies and to furthermore allow flexible mesh refinement, the nodal SP3 method has been developed on the basis of a flux expansion in trigonal-z geometry. In this paper, a verification of the methodology on quasi-pin level is performed by means of a single-assembly test example. The corresponding pin-wise few-group cross sections were obtained by the deterministic lattice code HELIOS. The power distributions were calculated using both the trigonal DYN3D diffusion and SP3 solver and compared to the HELIOS reference solutions. Close to regions with non-negligible flux anisotropies, e.g., caused by the presence of a strong absorbing material, the power distribution calculated by DYN3D-SP3 shows a significant improvement in comparison to the diffusion method.

Keywords: simplified P3; SP3; nodal method; trigonal; triangular; hexagonal; mesh refinement; pin level

  • Contribution to proceedings
    Jahrestagung Kerntechnik, 22.-24.05.2012, Stuttgart, Deutschland
  • Lecture (Conference)
    Jahrestagung Kerntechnik, 22.-24.05.2012, Stuttgart, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16447
Publ.-Id: 16447


Gamma-induced Positron Annihilation Spectroscopy

Butterling, M.; Anwand, W.; Wagner, A.; Krause-Rehberg, R.

The setup and idea of the Gamma-induced Positron Spectroscopy (GiPS) using the superconducting LINAC ELBE is presented. Features of a setup using bremsstrahlung to create positrons by pair production as well as the advantages of the characteristics of the ELBE beam will be shown and discussed. The measurement of the positron and positronium lifetime of water at various temperatures is an example for investigation and the connection of theory and experiment and will also show the perfect function of the GiPS setup.

Keywords: Positron Annihilation Spectroscopy; Bremsstrahlung; Positronium

Related publications

  • Lecture (others)
    Seminar talk as part of a DAAD contract (507 556 28) with Charles University Prague, 12.12.2011, Prague, Czech Republic

Permalink: https://www.hzdr.de/publications/Publ-16445
Publ.-Id: 16445


Differential cross section and analysing power of the quasi-free pn -> {pp}_s pi- reaction at 353 MeV

Dymov, S.; Azaryan, T.; Barsov, S.; Baru, V.; Benati, P.; Bertelli, S.; Chiladze, D.; Dzyuba, A.; Gebel, R.; Goslawski, P.; Guidoboni, G.; Hanhart, C.; Hartmann, M.; Kacharava, A.; Khoukaz, A.; Komarov, V.; Kulessa, P.; Kulikov, A.; Kurbatov, V.; Lenisa, P.; Lensky, V.; Lomidze, N.; Lorentz, B.; Macharashvili, G.; Mielke, M.; Mikirtytchiants, S.; Merzliakov, S.; Ohm, H.; Papenbrock, M.; Rathmann, F.; Serdyuk, V.; Shmakova, V.; Stroeher, H.; Tabidze, M.; Tsirkov, D.; Trusov, S.; Uzikov, Y.; Valdau, Y.; Wilkin, C.

In order to establish links between p-wave pion production in nucleon-nucleon collisions and low energy three-nucleon scattering, an extensive programme of experiments on pion production is currently underway at COSY-ANKE. The final proton pair is measured at very low excitation energy, leading to an S-wave diproton, denoted here as {pp}_s. By using a deuterium target we have obtained data on the differential cross section and analysing power of the quasi-free pol{p}n -> {pp}_s pi- reaction at 353 MeV. The spectator proton p_sp was either measured directly in silicon tracking telescopes or reconstructed using the momentum of a detected pi-. Both observables can be described in terms of s-, p-, and d-wave pion production amplitudes. Taken together with the analogous data on the pol{p}p -> {pp}_s pi0 reaction, full partial wave decompositions of both processes were carried out.

Permalink: https://www.hzdr.de/publications/Publ-16444
Publ.-Id: 16444


Gamma-induced Positron Lifetime and Age-Momentum Correlation Measurements (AMOC) of water at temperatures between 20° C and 90° C

Butterling, M.; Anwand, W.; Krause-Rehberg, R.; Wagner, A.

The Gamma-induced Positron Spectroscopy (GiPS) facility at ELBE (Helmholtz-Zentrum Dresden-Rossendorf) is ideally suited to measure extended volume sample materials like liquids with an information depth of several mm in an appropriate time [1]. Moreover, GiPS allows for studying positron lifetimes and positron momentum within the same experiment and thus allows for realizing Age-Momentum Correlation (AMOC) experiments within a fraction of time needed with conventional setups.

There are still questions about the microscopic structure of liquid water and the behavior of water inside membranes and at boundaries is under vivid investigation.
AMOC experiments revealing additional information about the local environment at the instance of pick-off positron annihilation of o-Ps were performed for water at temperatures between 20°C and 90°C to verify recently reported observations of periodic quantum beats in the AMOC spectra, caused by spin conversion of o-Ps [2]. The radiation effect caused by the use of bremsstrahlung for positron production was also investigated.

Different analysing methods for these spectra with high statistic and quality will be presented. Also the application of common theory for positronium formation and chemical reactions in water will be discussed.

Keywords: Positron Annihilation Spectroscopy; Gamma-induced Positron Spectroscopy; Positron Lifetime; Bremsstrahlung; Positronium

Related publications

  • Lecture (Conference)
    10th International Workshop on Positron and Positronium Chemistry (PPC10), 05.-09.09.2011, Smolenice, Slovakia

Permalink: https://www.hzdr.de/publications/Publ-16443
Publ.-Id: 16443


Lead sheets for organ pipes - Positron Spectroscopy for cultural heritage

Butterling, M.; Anwand, W.; Wagner, A.; Skorupa, W.; Eule, A.-C.

Lead sheets are a basic material to build metal pipes for organ pipes. Mostly lead gets alloyed with tin and in this manner its properties have been seen superior over centuries. But, the classical organ construction (16.-18.century) in the northern parts of Europe comprised the use of alloys with very low (2-3%) or no tin content because of cost reasons. In such cases the lead material shows critical properties regarding the mechanical strength and density. Nowadays, the restoration of organ instruments from this period requires the production of new material to replace corroded material or to substitute missing pipes or other organ parts. An important issue is the engineering of such material by mechanical hammering to increase the density. Microscopic cavities inside the casted material get closed in this way and the mechanical strength gets increased. Up to now there exists only an empirical knowledge about the quality changes due to the hammering treatment within a period of several centuries.
We used the Gamma-induced Positron Spectroscopy (GiPS) setup at ELBE at Helmholtz-Zentrum Dresden-Rossendorf to investigate the porosity of hammered and non-hammered material both for historical material from the 17th century and for newly produced sheet material for the first time to get microscopic information about the effect of the hammering practise. The Gamma-induced Positron Spectroscopy setup at ELBE is worldwide the only suitable setup to investigate solids with an information coming from the whole volume. Results obtained from this are compared with conventional depth resolving Doppler Broadening Spectroscopy measurements using a slow positron beam.

Keywords: Positron Annihilation Spectroscopy; Gamma-induced Positron Spectroscopy; Bremsstrahlung

Related publications

  • Lecture (Conference)
    Positron Studies of Defects (PSD) 11 Delft, 28.08.-02.09.2011, Delft, Netherlands

Permalink: https://www.hzdr.de/publications/Publ-16442
Publ.-Id: 16442


DRACO upgrade and the diode-pumped PW laser PEnELOPE

Siebold, M.

The Helmholtz-Centre Dresden-Rossendorf is now planning to build a fully diode-pumped Petawatt laser for laser-particle acceleration research. Within the PEnELOPE project (Petawatt, Energy-Efficient Laser for Optical Plasma Experiments) a pulse energy of 150 J, a repetition rate around 1 Hz and a pulse duration of 150 fs after compression are desired. Furthermore, the existing DRACO laser system - a 200TW flash lamped Ti:Sapphire laser is going to be upgraded soon towards the PW-level at short pulse lengths in the range of 25-30fs. Recent laser plasma experiments as well as issues of the laser development are addressed.

Keywords: high intensity lasers at HZDR

  • Lecture (others)
    Networking Actvity on Ultra-High Intensity Ultrashort Lasers (NAUUL), 16.06.2011, Salamanca, Spanien

Permalink: https://www.hzdr.de/publications/Publ-16441
Publ.-Id: 16441


High intensity lasers in Dresden: DRACO and PEnELOPE

Siebold, M.

The Helmholtz-Centre Dresden-Rossendorf is now planning to build a fully diode-pumped Petawatt laser for laser-particle acceleration research. Within the PEnELOPE project (Petawatt, Energy-Efficient Laser for Optical Plasma Experiments) a pulse energy of 150 J, a repetition rate around 1 Hz and a pulse duration of 150 fs after compression are desired. Furthermore, the existing DRACO laser system - a 200TW flash lamped Ti:Sapphire laser is going to be upgraded soon towards the PW-level at short pulse lengths in the range of 25-30fs.

Keywords: High intensity lasers at HZDR

  • Lecture (others)
    1st HiLASE workshop, 28.-29.11.2011, Prag, Tschechien

Permalink: https://www.hzdr.de/publications/Publ-16440
Publ.-Id: 16440


PEnELOPE - a high peak-power laser system for laser-particle acceleration experiments.

Siebold, M.; Loeser, M.; Roeser, F.; Schramm, U.

With the first demonstration of direct diode-pumped TW lasers with pulse energies of 1 J and more a scaling of this approach for use in PW-class laser systems became feasible. The Helmholtz-Centre Dresden-Rossendorf is now planning to build a fully diode-pumped Petawatt laser for laser-particle acceleration research. Within the PEnELOPE project (Petawatt, Energy-Efficient Laser for Optical Plasma Experiments) a pulse energy of 150 J, a repetition rate around 1 Hz and a pulse duration of 150 fs after compression are desired. In order to minimize the required pump peak power and therefore the initial costs a broad-band Ytterbium doped laser material with a long fluorescence lifetime (i.e. Yb:glass or Yb:CaF2) is chosen. A total pump peak-power of 1.2 MW is scheduled assuming a pump pulse duration of 2 ms and an envisioned optical-to-optical conversion efficiency of 10% before compression. Pulses as short as 60fs having an energy of 25nJ are generated in a commercial Yb:KGW oscillator at a center wavelength of 1035nm. In order to employ CPA technique the pulses are stretched to 2ns in a grating stretcher having grating constant of 1760 lines per mm. The amplifier-chain consists of a regenerative amplifier and 4 subsequent multipass amplifiers. While the regenerative amplifier produces a gain 40.000 gain narrowing is required to be suppressed by intra-cavity spectral shaping. In free-running mode (unseeded) a bandwidth of 20nm of the regenerative amplifier operating at the mJ level was achieved. A booster amplifier with a gain of 100 and 3 further multipass amplifiers each having a gain of 10-16 are required to achieve the desired pulse energy. Both, multipass amplification to the Joule-level and a small-signal of >40 in a single-disk Yb:CaF2 booster have been demonstrated recently.
For thermal management of the high-energy lasers the active mirror concept is one of the most promising techniques for room temperature operation of Yb-based lasers providing efficient cooling of the laser material and energy extraction. In order to maintain both efficiency and repetition rate and to suppress parasitic lasing while scaling the aperture of disk amplifiers a multiple disk approach also employing pump-recycling was proposed. Time-resolved thermal lens investigations on a diode-pumped Yb:CaF2 disk revealed a one order of magnitude less impact on the wavefront abberations compared to a Yb:YAG disk having a similar geometry.
In this paper we introduce the basic design concepts and first experimental proofs of the fully diode-pumped high peak-power laser PEnELOPE.

Keywords: High peak power diode pumped lasers

  • Lecture (Conference)
    International Conference on Ultra-intense Laser Interaction Science (ULIS), 10.-13.10.2011, Lisboa, Portugal

Permalink: https://www.hzdr.de/publications/Publ-16439
Publ.-Id: 16439


Active mirror high energy Yb:YAG amplifier

Loeser, M.; Siebold, M.; Kroll, F.; Roeser, F.; Schramm, U.

Diode-pumped lasers and amplifiers using Yb-doped materials have attracted increasing interest in the past years. This is owed to the high achievable efficiency of high energy amplifiers with high repetition rates and their potential to provide ultrafast laser pulses in the sub 100fs range. These properties allow their use in high intensity physics, laser fusion or pump sources for ultra-short Ti:Sa and OPCPA systems. Yb:YAG is one of the most important material for ns pulse generation and amplification with high efficiency also at room temperature. Here we present a joule-class Yb:YAG active mirror amplifier and the time-resolved analysis of its thermal lens. The active mirror concept is one of the most promising techniques for room temperature operation of Yb-based lasers providing efficient cooling of the laser material and energy extraction. A pulse energy of 730mJ at a repetition rate of 1Hz was obtained at an optical-to-optical conversion efficiency of 16%. Here a relay-imaging multipass cavity with 4 extraction passes and also 4 pump passes was employed. For seeding a Yb:YAG pre-amplifier with a output energy of 65mJ was used. The disk with an Yb-concentration of 5mol% comprises a thickness 2.5mm and diameter of 12.5mm. At pump energies of 4J and above the small-signal gain was drastically reduced by transverse lasing which was observed as a roll-over of the measured gain and efficiency. In order to get rid of parasitic lasing the doping concentration will be reduced while the thickness is increased such that the optical thickness of the disk remains. Furthermore, a multiple active mirror will be used in a redesigned setup allowing reduced thermal load of each single disk. The thermal lens measurements were compared with a rod type (transversally) cooled disk. At a repetition rate of 10Hz the thermal equilibrium of the disk was attained within the first pump shots while in the case of the rod type cooling serveral seconds were required.

Keywords: High energy lasers; diode pumped lasers; ytterbium

  • Lecture (Conference)
    SPIE Optics & Optoelectronics 2011, 18.-21.04.2011, Prag, Tschechien

Permalink: https://www.hzdr.de/publications/Publ-16438
Publ.-Id: 16438


Joule-level, diode-pumped, room-temperature Yb:CaF2 amplifiers

Loeser, M.; Siebold, M.; Kroll, F.; Roeser, F.; Schramm, U.

The Research Centre Dresden-Rossendorf is planning to build a fully diode-pumped Petawatt laser based on Ytterbium-doped calcium fluoride. A pulse energy of 200J, a repetition rate of 1Hz and a pulse duration of 200fs after compression are desired. In this project a total pump peak-power of 1.5MW is scheduled assuming a pump pulse duration of 2ms and a targeted optical-to-optical conversion efficiency of 10%. Here we present gain measurements and time-resolved analysis of the thermal lens of different Yb:CaF2 amplifier configurations. The active mirror concept is one of the most promising techniques for room temperature operation of Yb-based lasers providing efficient cooling of the laser material and energy extraction. Therefore, a disk amplifier was compared with a rod laser. A pulse energy of 600mJ at a repetition rate of 1Hz was achieved using a cylindrical rod with a length of 20mm, a diameter of 28mm and an Yb-concentration of 2mol%. For seeding an Yb:YAG pre-amplifier produced pulses with a duration of 6ns. With a 2-disk Yb:CaF2 amplifier comprising of 8 extracting beams and a pump recovery configuration the minimum required pump fluence in order to bleach out re-absorption at the laser wavelength of 1030nm was reduced roughly by a factor of two down to 13J/cm2. Furthermore, the thermal lens power was reduced from 5dpt of the rod down to smaller than 0.05dpt for 3mm thin disks at 10Hz.

Keywords: laser materials; diode pumped lasers; high peak power

  • Lecture (Conference)
    SPIE Optics & Optoelectronics, 18.-21.04.2011, Prag, Tschechien

Permalink: https://www.hzdr.de/publications/Publ-16437
Publ.-Id: 16437


Broadband, diode-pumped Yb:SiO2 multicomponent glass laser

Loeser, M.; Roeser, F.; Reichelt, A.; Kroll, F.; Siebold, M.; Schramm, U.; Grimm, S.; Litzkendorf, D.; Kirchhof, J.

Here we present first lasing and tunability results of a diode-pumped Yb:SiO2 multicomponent glass laser. The multicomponent glass consists of 70 mol% SiO2, 20 mol% Al2O3, 9.1 mol% La2O3, and a doping level of 0.875 mol% Yb2O3. Due to the high contingent of SiO2 the spectroscopic properties of the multicomponent glass is similar to Yb-doped fused silica glass. The huge advantage of the here presented multicomponent fused silica glass as gain material is its fabrication technique. It can be produced directly out of a glass melt with large active volume and high optical quality.
The Yb-doped multicomponent glass sample in the experiment had a thickness of 1.5 mm and was polished in laser quality. For pumping a fiber coupled laser diode was used with power of 6W at 975nm. The pump absorption was about 60%. In order to increase the pump absorption the non-absorbed pump was re-imaged back into the Yb:SiO2. The laser cavity was a V-shaped resonator and the folding mirror had a curvature of 200mm. This results in a stable confocal resonator with a beam waist of about 50 µm in the glass and 600 µm on the output coupler. The free running laser wavelength was centered around 1055nm. The slope efficiency results in a value of 32%. The wavelength tunability of the laser cavity was achieved inserting a brewster prism (SF10) in between the folding mirror and the output coupler. At a pump level of 5W the laser had a tuning range from 1010 nm to 1080nm.

Keywords: ytterbium doped laser materials

  • Lecture (Conference)
    SPIE Optics & Optoelectronics, 18.-21.04.2011, Prag, Tschechien

Permalink: https://www.hzdr.de/publications/Publ-16436
Publ.-Id: 16436


High-Efficiency Cryogenic-Cooled Diode-Pumped Amplifier with Relay Imaging for Nanosecond Pulses

Koerner, J.; Hein, J.; Kahle, M.; Liebetrau, H.; Kaluza, M.; Siebold, M.; Loeser, M.

We present temperature dependent gain measurements with different Ytterbium doped laser media, such as Yb:YAG, Yb:FP15-glass and Yb:CaF2 in a multi-pass amplifier setup. The temperature of these materials was adjusted arbitrarily between 100K and 300K, while heat removal was realized by transverse cooling. In order to obtain a good beam profile throughout the amplification process, we used an all-mirror based relay imaging setup consisting of a telescope accomplishing a 4f-imaging with a plane mirror in each image plane. The amplification beam is then coupled into the cavity and doing several round trips wandering over the surface of the spherical mirrors. Hence the laser material is placed in one of the image planes, the beam quality of the amplifier was ruled by the intensity profile of the pumping laser diodes consisting of two stacks with 2.5kW peak output power each. Due to the given damage threshold fluence, the output energy of the amplifier was limited to about 1J at a beam diameter of 4.5 mm (FWHM). The seed pulses with a duration of 6 ns were generated in a Yb:FP15-glass cavity dumped oscillator with further amplification up to the 100mJ level by a room temperature Yb:YAG multi pass amplifier. The 1 Hz repetition rate of the system was limited by the repetition rate of the front-end. With Yb:YAG for instance an output energy of 1.1 J with an record high optical to optical efficiency of more than 35% was achieved, which was further increased to 45% for 500 mJ output energy.

Keywords: Diode-pumped laser; ytterbium doped material; cryogenic

  • Contribution to proceedings
    SPIE Optics & Optoelectronics, 18.-21.04.2011, Prag, Tschechien
    Proc. SPIE Vol. 8080, 80800D

Permalink: https://www.hzdr.de/publications/Publ-16435
Publ.-Id: 16435


Temperature Dependent Measurement of Absorption and Emission Cross Sections for Various Yb3+ Doped Laser Materials

Koerner, J.; Hein, J.; Kahle, M.; Liebetrau, H.; Kaluza, M.; Loeser, M.; Siebold, M.

For laser performance simulations, optical properties of applied active materials have to be exactly known. Here we report on temperature dependent emission and absorption cross section measurements for Yb:YAG, Yb:CaF2 and Yb:FP15-glass. The temperature of the samples was aligned in steps of 20 K between 100 K and room temperature with a liquid nitrogen driven cryostat. Absorption spectra were obtained with a fiber coupled white light source and fluorescence spectra by excitation with a fiber coupled 10W laser diode at 970 nm. All spectral measurements were performed with a scanning spectrum analyzer, providing a spectral resolution down to 0.05 nm. By applying the McCumber relation in combination with the Fuchtbauer-Ladenburg method, we were able to obtain a valid emission cross section over the whole range of interest from the measured data.

Keywords: ytterbium doped laser materials; diode pumped lasers

  • Contribution to proceedings
    SPIE Optics & Optoelectronics, 18.-21.04.2011, Prag, Tschechien
    Proc. SPIE Vol. 8080, 808 003

Permalink: https://www.hzdr.de/publications/Publ-16434
Publ.-Id: 16434


Optical properties of CaF2 and Yb3+:CaF2 for laser applications

Staeblein, J.; Poehl, K.; Weisleder, A.; Von-Der-Goenna, G.; Toepfer, T.; Hein, J.; Siebold, M.

Highly transparent CaF2 has found many applications from the deep UV- to the IR-range. The optical quality and the laser damage threshold are influenced by the purity and the real structure of the crystal. Both properties strongly depend on raw material quality and growth conditions. Production of pure CaF2 single crystals and their characterization are described. The authors´ process enables to produce crystals up to diameters of 425mm with an internal transmittance of higher than 99.7% at 193nm (thickness 100mm) and a homogeneity of refractive index below 1ppm for diameters >200mm. A new approach is the growth of Yb3+ doped CaF2 crystals in such furnaces dedicated to large volumes. The advantage of higher volume is a better homogeneity of the dopant concentration and the diffractive index in the crystal. Critical mechanical properties especially of the doped fluoride have to be taken into account. The growth process has to be adopted carefully to avoid stress, cracks and other crystal defects. Data of refractive index homogeneity and stress birefringence are presented. A comparison of doped and undoped crystals is made and an outlook for further improvement is given. The segregation coefficient of the dopant which is important to be near to one is reported. The ratio Yb3+ /Yb2+ is characterized spectroscopically. Differences between top and bottom of the crystal are shown. Results of the real structure evaluation are presented. The most critical feature for high energy applications which are strength and concentration of small angle grain boundaries are compared with that of undoped crystals.

Keywords: ytterbium doped laser materials

  • Contribution to proceedings
    SPIE Optics Optoelectronics 2011, 18.-21.04.2011, Prag, Tschechien
    SPIE Volume 8080A, 808002

Permalink: https://www.hzdr.de/publications/Publ-16433
Publ.-Id: 16433


Cryogenic-cooled Yb:YAG amplifier for ns-pulses obtaining high optical efficiencies

Koerner, J.; Liebetrau, H.; Hein, J.; Kahle, M.; Loeser, M.; Siebold, M.

Since typically low temperatures turn the quasi three level system of Yb:YAG into a four level system much higher efficiencies are expected by cryogenic cooling. Former experiments achieved efficiencies up to 30 % [3], which is below theoretical expectations [1,2]. To increase the efficiency through a better overlap between the pumped area and the seed beam profile, a novel all-reflective relay imaging amplifier has been built. Astigmatism compensation of the setup was achieved by folding the beam pass out of plane. The Yb:YAG crystal was placed in a liqiud nitrogen cooled mount inside a vaccum chamber.
The amplifier design allows to switch between different numbers of passes easily. In a six pass configuration a maximum optical-to-optical efficiency of 46% with a output energy of more than 600 mJ was achieved (s. Figure 1). With a slightly modified setup the output energy was increased to 1.1 J in a eight-pass scheme at a reduced efficiency of 36 %.

Keywords: diode-pumped lasers; ytterbium doped materials

  • Contribution to proceedings
    Conference on Lasers and Electro-Optics (CLEO) Europe, 22.-26.05.2011, München, Deutschland
    Conference on Lasers and Electro-Optics, CA10.3

Permalink: https://www.hzdr.de/publications/Publ-16432
Publ.-Id: 16432


Temperature resolved measurements of absorption and emission cross sections for various Yb3+-doped gain media from 100K to room temperature

Koerner, J.; Hein, J.; Liebetrau, H.; Kahle, M.; Lenski, M.; Loeser, M.; Siebold, M.

It has been shown, that cryogenic cooling of Yb3+-doped media is increasing laser performance significantly[1,2]. The reason for this is the thermal depopulation of the lower laser levels turning the quasi three level extraction scheme into a real four level scheme. By now most of these cryogenic cooled amplifiers aim on liquid nitrogen temperature. For future systems it has to be estimated what is an optimum operation temperature as compromise between laser performance and effort for cooling. This is needed as well from an energetic point of view as from an financial point of view. For this it is necessary to know the basic absorption and emission cross sections in dependence of temperature.
We present measurement of such cross sections in an temperature range from 100K to room temperature for various gain material such as Yb:YAG, Yb:CaF2 and Yb:FP15-glass. The absorption cross sections are calculated from the absorption spectra. The emission cross sections are determined from the absorption and emission spectra employing the Füchtbauer-Ladenburgmethod and theMcCumber relation [3,4]. Additional wavelength dependent gain measurements are used to cross check the validity of the measurements.

Keywords: diode-pumped laser; ytterbium-doped materials

  • Contribution to proceedings
    Conference on Lasers and Electro-Optics (CLEO) Europe, 22.-26.05.2011, München, Deutschland
    Conference on Lasers and Electro-Optics, CAP.3

Permalink: https://www.hzdr.de/publications/Publ-16431
Publ.-Id: 16431


High-energy, diode-pumped Yb:CaF2 disk-laser

Siebold, M.; Loeser, M.; Roeser, F.; Kroll, F.; Koerner, J.; Hein, J.; Schramm, U.

Previous works on Ytterbium-doped alcaline-earth fluoride have impressively shown that these materials are suitable for high-peak power operation [1,2] due to their broad emission spectrum comparable with rare-earth doped laser glasses. From the scaling point of view Yb:CaF2 is the most promising material since crystal growth at large sizes with diameters up to 100 mm and more with high optical quality have been demonstrated so far. Also the thermo-mechanical and thermo-optical properties such as the negative thermal lens of Yb:CaF2 are superior for high-average power lasers [3]. Moreover, the high saturation fluence (i.e. 80 J/cm2) pushes the potential energy limit of thin disk lasers by about one order of magnitude compared to oxide laser materials such as Yb:YAG. This means that at a given stored energy parasitic lasing is reduced by a low transverse gain [4]. However, the low single-pass gain of Yb:CaF2 lasers must compensated by a large number of amplifier passes. We built a multi-pass Yb:CaF2 disk amplifier pumped with a diode laser module having a peak power of 16.8 kW (provided by Lastronics GmbH, Germany). A maximum pump energy of 40.3 J at a wavelength of 940 nm was obtained at a pump duration of 2.4 ms while the flat-top shaped pump profile (6 × 6 mm2) was homogenized by a doublet of micro-lens arrays inside the module and imaged into the gain medium. The seed pulses with a duration of 6 ns (FWHM) were generated in a Q-switched Yb:YAG oscillator and then pre-amplified from 400 μJ to 100 mJ at a repetition rate of 1 Hz in a booster Yb:YAG amplifier. For comparison a rod type and a disk Yb:CaF2 amplifier were build and analyzed. While the laser rod with a diameter of 28 mm and a length of 20 mm was 2.2 mol% Yb-doped the doping concentration of the disk with a thickness of 2.7 mm and diameter of 20 mm was 4.5 mol% Yb. In case of the rod a two-side anti-reflection (AR) coating and a highly reflective (HR) mirror was used, whereas the disk was HR-coated from the rear side and glued on a plane copper-mirror for thermal contact. A maximum output pulse energy of 1.2 J at a repetition rate of 1 Hz of the multi-pass Yb:CaF2 amplifier with the rod-type material was measured. Above 1.2 J laser induced damage occurred in the rod volume while at 270 mJ surface damage on the AR-side was observed in the case of the disk. This very low damage resistance of ~1 J/cm2 is owed to the surface quality in our specific case and therefore the optical-to-optical conversion efficiency was limited to 1.5%. In the case of the rod type amplifier an efficiency of 4% was obtained. Fig. 1 illustrates the setup and the dynamic of both Yb:CaF2 amplifier configurations. Although the efficiency achieved was limited it becomes obvious that the performance of the disk is improved compared to the rod with regard to the total gain and minimum pump energy in order to bleach out the reabsorption at the laser wavelength of 1030 nm. Future work is now in progress in order to boost the pulse energy and hence the extraction efficiency of the disk Yb:CaF2 amplifier.

Keywords: diode-pumped lasers; ytterbium doped materials

  • Contribution to proceedings
    Conference on Lasers and Electro-Optics (CLEO) Europe, 22.-26.05.2011, München, Deutschland
    Conference on Lasers and Electro-Optics, CA4.4

Permalink: https://www.hzdr.de/publications/Publ-16430
Publ.-Id: 16430


Innovative Informationstechnik im Dienste der Forschung am Beispiel des Helmholtz-Zentrums Dresden-Rossendorf.

Konrad, U.

Das Papier beschreibt innovative Anwendungen der Informationstechnologie in der Forschung am Helmholtz-Zentrum Dresden-Rossendorf (HZDR). Dazu werden Beispiele aus den Gebieten High Performance Computing, Visualisierung und Virtual Reality sowie Identity Management erläutert, bei denen das HZDR zusammen mit Partnern fortschrittliche Lösungen entwickelt hat.

Keywords: Information Technology; High Performance Computing; Visualization; Virtual Reality; Identity Management; Research Infrastructure

  • Invited lecture (Conferences)
    Regenerative Energien als Zukunftstechnologien, Internationale Tagung anlässlich des 120-jährigen Jubiläums der Ingenieurausbildung am Standort Köthen, 13.-14.10.2011, Köthen, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16429
Publ.-Id: 16429


Joint Project: Interaction and transport of actinides in natural clay rock with consideration of humic substances and clay organics - Characterization and quantification of the influence of clay organics on the interaction and diffusion of uranium and americium in the clay (Final Report BMWi Project No.: 02 E 10156)

Schmeide, K.; Joseph, C.; Sachs, S.; Steudtner, R.; Raditzky, B.; Günther, A.; Bernhard, G.

The objective of this project was the study of basic interaction processes in the systems actinide - clay organics - aquifer and actinide - natural clay - clay organics - aquifer. Thus, complexation, redox, sorption and diffusion studies were performed.
To evaluate the influence of nitrogen, phosphorus and sulfur containing functional groups of humic acid (HA) on the complexation of actinides in comparison to carboxylic groups, the Am(III) and U(VI) complexation by model ligands was studied by UV-Vis spectroscopy and TRLFS. The results show that Am(III) is mainly coordinated via carboxylic groups, however, probably stabilized by nitrogen groups. The U(VI) complexation is dominated by carboxylic groups, whereas nitrogen and sulfur containing groups play a minor role. Phosphorus containing groups may contribute to the U(VI) complexation by HA, however, due to their low concentration in HA they play only a subordinate role compared to carboxylic groups. Applying synthetic HA with varying sulfur contents (0 to 6.9 wt.%), the role of sulfur functionalities of HA for the U(VI) complexation and Np(V) reduction was studied. The results have shown that sulfur functionalities can be involved in U(VI) humate complexation and act as redox-active sites in HA for the Np(V) reduction. However, due to the low content of sulfur in natural HA, its influence is less pronounced.
In the presence of carbonate, the U(VI) complexation by HA was studied in the alkaline pH range by means of cryo-TRLFS (-120°C) and ATR FT-IR spectroscopy. The formation of the ternary UO2(CO3)2HA(II)4− complex was detected. The complex formation constant was determined with log β0.1 M = 24.57 ± 0.17.
For aqueous U(VI) citrate and oxalate species, luminescence emission properties were determined by cryo-TRLFS and used to determine stability constants. The existing data base could be validated.
The U(VI) complexation by lactate, studied in the temperature range 7 to 65°C, was found to be endothermic and entropy-driven. In contrast, the complex stability constants determined for U(VI) humate complexation at 20 and 40°C are comparable, however, decrease at 60°C.
For aqueous U(IV) citrate, succinate, mandelate and glycolate species stability constants were determined. These ligands, especially citrate, increase solubility and mobility of U(IV) in solution due to complexation.
The U(VI) sorption onto crushed Opalinus Clay (OPA, Mont Terri, Switzerland) was studied in the absence and presence of HA or low molecular weight organic acids, in dependence on temperature and CO2 presence using OPA pore water as background electrolyte. Distribution coefficients (Kd) were determined for the sorption of U(VI) and HA onto OPA with (0.0222 ± 0.0004) m3/kg and (0.129 ± 0.006) m3/kg, respectively. The U(VI) sorption is not influenced by HA (50 mg/L), however, decreased by low molecular weight organic acids (> 1×10-5 M), especially by citrate and tartrate. With increasing temperature, the U(VI) sorption increases both in the absence and in the presence of clay organics.
The U(VI) diffusion in compacted OPA is not influenced by HA at 25 and 60°C. Predictions of the U(VI) diffusion show that an increase of the temperature to 60°C does not accelerate the migration of U(VI). With regard to uranium-containing waste, it is concluded that OPA is suitable as host rock for a future nuclear waste repository since OPA has a good retardation potential for U(VI).

Keywords: Actinides; americium; uranium; neptunium; humic substances; clay organics; model ligands; Opalinus clay; complexation; reduction; sorption; diffusion; migration; repository

  • Other report
    Dresden: Helmholtz-Zentrum Dresden-Rossendorf, 2011
    157 Seiten

Permalink: https://www.hzdr.de/publications/Publ-16428
Publ.-Id: 16428


Superconducting layers in silicon - Get ready for the quantum interference -

Fiedler, J.; Skrotzki, R.

Ausgezeichnet mit dem DFCNA-Sonderpreis 2011 vom Dresdner Fraunhofer-Cluster Nanoanalytik im Rahmen der Vergabe der Dresdner Barkhausen-Poster-Preise

Related publications

  • Poster
    Dresdner Barkhausen-Poster-Preis 2011, 10.02.2012, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16427
Publ.-Id: 16427


Substrate effect on the resistive switching in BiFeO3 thin films

Shuai, Y.; Ou, X.; Wu, C.; Zhang, W.; Zhou, S.; Bürger, D.; Reuther, H.; Slesazeck, S.; Mikolajick, T.; Helm, M.; Schmidt, H.

BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interfaces. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.

  • Contribution to proceedings
    56th Annual Conference on Magnetism and Magnetic Materials, 30.10.-03.11.2011, Scottsdale, USA
    Journal of Applied Physics
  • Journal of Applied Physics 111(2012), 07D906

Permalink: https://www.hzdr.de/publications/Publ-16426
Publ.-Id: 16426


Nonvolatile resistive switching in Au/BiFeO3 rectifying junction

Shuai, Y.; Wu, C.; Zhang, W.; Zhou, S.; Bürger, D.; Slesazeck, S.; Mikolajick, T.; Helm, M.; Schmidt, H.

Resistive switching in oxides has attracted increasing attention due to the potential application for nonvolatile memory devices [1,2]. Resistive switching has been observed usually in a metal-insulator-metal (MIM) capacitor-like structure, which can be set and reset to low resistance state and high resistance state by applying external voltages with opposite polarities. In an asymmetric MIM structure where a Schottky contact and an Ohmic contact are formed at the two interfaces, respectively, it is generally believed that the Schottky interface dominates the bipolar resistive switching behavior.
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition. RF sputtered Au has been used for the top electrode. The transport properties of the BiFeO3 thin films have been previously demonstrated to be sensitive to the interface [3]. In the present work, an interface-related resistive switching behavior with large switching ratio of ~300 has been observed in the Au/BiFeO3/Pt structure [4]. The different polarities of the external voltage induce an electron trapping or detrapping process, and consequently change the depletion layer width below the Au Schottky contact, which is revealed by capacitance-voltage measurements and by long-term low/high resistance state capacitance transient measurements at zero bias. The resistive switching shows a long term retention and non-destructive read-out character, which is proved by pulsed voltage measurements. A dynamic equilibrium process involving the extension of the depletion region can be used to explain the good retention in the Au/BiFeO3/Pt structure. The present work can help to further understand the physical origin of bipolar switching in BiFeO3 and in other thin film oxides with electron trapping centers.

[1] K. Terabe et al., Nature 433, 47 (2005).
[2] R. Waser and M. Aono, Nature Mater. 6, 833 (2007).
[3] Y. Shuai et al., J. Appl. Phys., in press.
[4] Y. Shuai et al., Appl. Phys. Lett. 98, 232901 (2011).

Keywords: resistive switching; nonvolatile; Schottky contact

  • Lecture (Conference)
    2011 MRS Fall Meeting & Exhibit, 28.11.2011, Boston, MA, United States of America

Permalink: https://www.hzdr.de/publications/Publ-16425
Publ.-Id: 16425


Temperature Measurement in Ultra-Short Annealing Processes

Reichel, D.; Skorupa, W.; Schumann, T.

Industrial demands for short process times at low cost are steadily increasing. Considerable attention is thereby drawn to ultra-short annealing cycles on the order of just a few milliseconds. Flash Lamp Annealing allows for directed thermal treatment of surfaces within just a few milliseconds without or with drastically reduced thermal stress of the bulk material. Due to the selected wavelength range in the visible and near infrared region the lightpulse is absorbed by the near-surface layers and diffusion into the bulk is limited by the ultrashort time span. Thereby temperatures up to 2000°C are achieved dependent on the energy of the lightpulse and the optical properties of the sample. Cooling takes place by heat conduction into the bulk. To control the annealing process a precise temperature measurement is required that can filter the intense background radiation to obtain the true wafer temperature from its thermal radiation. A new method for temperature measurement will be presented which imposes a modulation on the lamp radiation to extract the true wafer signal.

Keywords: Flash Lamp Annealing; Ultra-Short Annealing; Temperature Measurement; Ripple Pyrometry

  • Lecture (Conference)
    Subsecond Thermal Processing of Advanced Materials, 25.-27.10.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16424
Publ.-Id: 16424


Aus alt mach neu – Ripple Pyrometrie für die Blitzlampenausheilung

Reichel, D.; Skorupa, W.; Schumann, T.

Dieser Vortrag befasst sich mit der Temperaturmessung in der Kurzzeitausheilung. Dazu werden die besonderen Anforderungen an die Temperaturmessung in Kurzzeitausheilungsprozessen beleuchtet und historische Lösungen vorgestellt, darunter auch die Ripple Pyrometrie. Letztere wird seit Mitte der Neunziger Jahre erfolgreich für Heißprozesse im Sekundenbereich angewandt. Den Autoren ist es gelungen, diese Methode für Prozesse im Millisekundenbereich (Blitzlampenausheilung) umzusetzen. Experimentelle Ergebnisse werden vorgestellt und hinsichtlich ihres Einflusses auf den Gesamtfehler der Messung analysiert.

Keywords: Ultra-Short Annealing; Temperature Measurement; Ripple Pyrometry; Flash Lamps

  • Lecture (Conference)
    Nutzertreffen Heißprozesse, 23.-24.11.2011, Blaubeuren, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16423
Publ.-Id: 16423


3d transition metal diffusion in diluted magnetic semiconductors prepared by pulsed laser processing

Bürger, D.; Seeger, M.; Zhou, S.; Skorupa, W.; Schmidt, H.

High dopant concentrations are often a prerequisite condition for the realization of semiconductors with new functionalities. For example, magnetic dopants can be used to fabricate ferromagnetic semiconductors (FMS) [1] or intermediate band semiconductors for solar cells [2, 3]. The main problem for processing these materials is the very low solubility of magnetic dopants in elementary and III-V semiconductors. Therefore, thermodynamical non-equilibrium conditions have to be applied to overcome these limits. Thereby, the diffusion path during processing has to be as short as possible to reduce clustering processes which would result in a deactivation of dopants.
The diffusion barrier Q of standard shallow donor or acceptor dopants in the solid phase
is generally high which results in very low diffusion coefficients. Therefore, during the fast cooling process after PLA, diffusion or hopping of such shallow dopant atoms in recrystallized Si and GaAs has not been considered in detail and no models were developed which quantify interdiffusion processes of dopants for materials with large bulk diffusion barriers Q. However, 3d transition metal dopants in the most important semiconductors have relatively small bulk diffusion barriers Q that result in higher diffusion rates as compared to standard shallow donors. Therefore, the usual assumption that dopants remain fixed on their initial position during PLA processing has to be verified for each type of magnetic dopant in semiconductor spintronics materials.
In this work, we perform a Monte Carlo Study on a three-dimensional diffusion model to evaluate the kinetics of initial clustering in a simple cubic host:dopant system. In a second step, the temperature quenching process during PLA was calculated for the materials GaAs and Si and conclusions about diffusion and clustering of typical 3d transition metal dopants can be drawn with respect to the PLA parameters. For Mn in GaAs we also consider declustering effects that have to be included for strongly diffusing dopants like Mn in Si.

[1] T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
[2] A. Luque and A. Marti, Phys. Rev. Lett. 78, 5014 (1997).
[3] J. Olea, M. Toledano-Luque, D. Pastor, G. Gonzáles-Díaz, and I. Mártil, J. Appl. Phys. 104, 016105 (2008).

Keywords: nanoscale clustering; diffusion; diluted magnetic semiconductor

  • Poster
    subtherm 2011, 24.-27.10.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16422
Publ.-Id: 16422


CFD-Simulations of an impinging jet using a polydispersed multi-field model approach

Hänsch, S.; Lucas, D.; Krepper, E.; Danciu, D.-V.

A new CFD-strategy of a generalized two-phase flow (GENTOP) is presented. The idea of GENTOP combines a multi-field simulation with the recently developed Multiple Size Group (MUSIG) -approach. In the MUSIG-framework, transfers between the different bubble size groups due to bubble coalescence and –breakup are described. By modelling an additional mass transfer between the polydispersed and continuous gas phase, transitions between different gas morphologies can be considered. The continuous gas phase represents the largest gas structures so that for these structures the gas-liquid-interfaces are resolved. This new concept can give a more detailed explanation of complex flow situations, particularly with higher gas fractions, such as the impinging jet being just one application. First results computed by the CFD-code CFX 13.0 are compared to experiments and theoretical data reported in literature.

Keywords: multiphase flow; turbulent impinging jet; free surface; air entrainment; multi-field simulation; MUSIG-model

  • Contribution to proceedings
    6th International Berlin Workshop on Transport Phenomena with Moving Boundaries, 24.-25.11.2011, Berlin, Deutschland
    Proceedings of the 6th International Berlin Workshop on Transport Phenomena with Moving Boundaries
  • Lecture (Conference)
    6th International Berlin Workshop on Transport Phenomena with Moving Boundaries, 24.-25.11.2011, Berlin, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16421
Publ.-Id: 16421


Magnetic and optical properties of virgin arc furnace grown MgO crystals

Prucnal, S.; Shalimov, A.; Ozerov, M.; Potzger, K.; Skorupa, W.

Transition metal ions (Mn2+, Cr3+, Fe2+/3+, V2+) as substitutional impurities in cubic crystals play an important role due to their influence on the magneto-optical properties of the virgin crystals. The optical and magnetic properties of commercial MgO(001) single crystals were investigated. The PL spectra of 3d impurity ions (Cr3+ and V2+) show narrow zero phonon lines with decay times in the range of milliseconds and a broad multiphonon sideband decaying in microseconds. The EPR study exhibits hyperfine components corresponding to Mn atoms and to V atoms located in orthorhombic symmetry. The intensity change of the EPR and PL spectra as well as the variation of the decay time with temperature can be explained by electron-spin lattice relaxation due to the Raman process.

Keywords: MgO; Point defects; Magneto-optic materials; Photoluminescence; Magnetism

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Permalink: https://www.hzdr.de/publications/Publ-16420
Publ.-Id: 16420


Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

Laufer, A.; Volbers, N.; Eisermann, S.; Potzger, K.; Geburt, S.; Ronning, C.; Meyer, B.

Zinc oxide (ZnO) is regarded as a promising material for optoelectronic devices, due to its electronic properties. Solely, the difficulty in obtaining p-type ZnO impedes further progress. In this connection, the identification and quantification of impurities is a major demand. For quantitative information using secondary ion mass spectrometry (SIMS), so-called relative sensitivity factors (RSF) are mandatory. Such conversion factors did not yet exist for ZnO. In this work, we present the determined RSF values for ZnO using primary (ion implanted) as well as secondary (bulk doped) standards. These RSFs have been applied to commercially available ZnO substrates of different surface termination (a-plane, Zn-face, and O-face) to quantify the contained impurities. Although these ZnO substrates originate from the same single-crystal, we observe discrepancies in the impurity concentrations. These results cannot be attributed to surface termination dependent RSF values for ZnO.

Keywords: ZnO; SIMS

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Permalink: https://www.hzdr.de/publications/Publ-16419
Publ.-Id: 16419


Systematics of azimuthal asymmetries in heavy ion collisions in the 1 A GeV regime

Reisdorf, W.; Leifels, Y.; Andronic, A.; Averbeck, R.; Barret, V.; Basrak, Z.; Bastid, N.; Benabderrahmane, M. L.; Caplar, R.; Crochet, P.; Dupieux, P.; Dzelalija, M.; Fodor, Z.; Gasik, P.; Grishkin, Y.; Hartmann, O. N.; Herrmann, N.; Hildenbrand, K. D.; Hong, B.; Kang, T. I.; Kecskemeti, J.; Kim, Y. J.; Kirejczyk, M.; Kis, M.; Koczon, P.; Korolija, M.; Kotte, R.; Kress, T.; Lebedev, A.; Lopez, X.; Matulewicz, T.; Merschmeyer, M.; Neubert, W.; Petrovici, M.; Piasecki, K.; Rami, F.; Ryu, M. S.; Schuettauf, A.; Seres, Z.; Sikora, B.; Sim, K. S.; Simion, V.; Siwek-Wilczynska, K.; Smolyankin, V.; Stockmeier, M.; Stoicea, G.; Tyminski, Z.; Wisniewski, K.; Wohlfarth, D.; Xiao, Z. G.; Xu, H. S.; Yushmanov, I.; Zhilin, A.

Using the large acceptance apparatus FOPI, we study central and semi-central collisions in the reactions (energies in A GeV are given in parentheses): 40Ca+40Ca (0.4, 0.6, 0.8, 1.0, 1.5, 1.93), 58Ni+58Ni (0.15, 0.25, 0.4), 96Ru+96Ru (0.4, 1.0, 1.5), 96Zr+96Zr (0.4, 1.0, 1.5), 129Xe+CsI (0.15, 0.25, 0.4), 197Au+197Au (0.09, 0.12, 0.15, 0.25, 0.4, 0.6, 0.8, 1.0, 1.2, 1.5). The observables include directed and elliptic flow. The data are compared to earlier data where possible and to transport model simulations. A stiff nuclear equation of state is found to be incompatible with the data. Evidence for extra-repulsion of neutrons in compressed asymmetric matter is found.

Permalink: https://www.hzdr.de/publications/Publ-16418
Publ.-Id: 16418


Actinide(IV)-oxyhydroxide colloids vs. actinide(IV)-silica colloids: their relevance for environmental conditions

Zänker, H.; Hennig, C.; Weiss, S.

Evidence is provided by PCS, ultrafiltration and ultracentrifugation that uranium(IV) can form silicate-containing colloids. The particles are generated in near-neutral to slightly alkaline solutions containing background chemicals of geogenic nature (carbonate, silicate, sodium ions). They remain stable in aqueous suspension over years. A concentration of up to 10-3 M of colloid-borne U(IV) was observed which is a concentration much higher than the concentrations of truly dissolved or colloidally suspended waterborne An(IV) species hitherto reported for the near-neutral pH range. The prevailing size of the particles is below 20 nm. Laser Doppler velocimetry reveals that the nanoparticles are stabilized in solution by electrostatic repulsion due to a negative zeta potential caused by the silicate. The isoelectric point of the nanoparticles is shifted toward lower pH values by the silicate. Extended X-ray absorption fine structure (EXAFS) spectroscopy showed that U-O-Si bonds, which increasingly replace the U-O-U bonds of the amorphous uranium(IV) oxyhydroxide with increasing silicate concentrations, make up the internal structure of the colloids.
Keywords: uranium(IV), silicate, colloids, near-neutral pH

Keywords: uranium(IV); thorium(IV); silicate; colloids; near-neutral pH

Related publications

  • Lecture (Conference)
    12. Koordinierungsgespräch HZDR – PSI/LES, 08.-09.12.2011, 08.-09.12.2011, Villigen, Schweiz

Permalink: https://www.hzdr.de/publications/Publ-16417
Publ.-Id: 16417


Singular surfaces associated with multiple eigenvalues and related physical effects

Kirillov, O.

It is common to consider that generically discrete eigenvalues of an operator are simple. However, in multiparameter operator families multiple eigenvalues are a robust phenomenon. Singular ruled surfaces were studied already by John Wallis, who in 1655 introduced his famous conical wedge known in the modern physical literature under the name of the “double coffee filter”. Later on, due to the efforts of Monge, Catalan, Plücker, Steiner and Cayley, the development of the theory of the ruled surfaces had lead to the formulation of the projective geometry. A first non-trivial physical effect related to the double semi-simple eigenvalue was discovered by Hamilton in 1833, who established that it determines a conical singularity of the dispersion surface – the Hamilton’s diabolical point (DP) – that yields a conical ray surface, which is observable in experiments with birefringent crystals as a conical refraction. In the presence of absorption and optical activity the conical singularities of the dispersion surface can transform into branch points that correspond to double eigenvalues with the Jordan block (exceptional points, EPs). This happens because the matrix determining the dispersion relation becomes a non-Hermitian one, for which an EP has a lower codimension than for a DP. In my presentation I will talk about manifestation of the multiple eigenvalues and the singular surfaces associated with them in modern physical applications such as magnetohydrodynamics dynamo and helical magnetorotational instability where the singularities determine non-trivial scaling laws and help to establish important limits for the critical parameters. I will discuss the role of the singularities in dissipation-induced instabilities on the example of the Brouwer’s problem on a heavy particle in a rotating vessel and show its connection to the modern works on crystal optics, wave propagation and rotor dynamics. Finally, I will touch the issue of the geometric phase in non-Hermitian systems.

Keywords: Instability threshold; parameters; optimization; non-smooth merit functions; multiple eigenvalues; dissipation-induced instabilities

  • Lecture (others)
    Lecture at the seminar of Prof. Roland Ketzmerick, Max-Planck-Institut für Physik komplexer Systeme (MPI-PKS), 21.01.2011, Dresden, Germany

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Permalink: https://www.hzdr.de/publications/Publ-16416
Publ.-Id: 16416


Singular surfaces and multiple eigenvalues in stability and optimization of non-conservative systems

Kirillov, O.

it is common to consider that generically discrete eigenvalues of an operator are simple. However, in multiparameter operator families multiple eigenvalues are a robust phenomenon. Singular ruled surfaces were studied already by John Wallis, who in 1655 introduced his famous conical wedge known in the modern physical literature under the name of the “double coffee filter”. Later on, due to the efforts of Monge, Catalan, Plücker, Steiner and Cayley, the development of the theory of the ruled surfaces had lead to the formulation of the projective geometry. In XXth century the singular surfaces reappeared again in the form of a powerful singularity theory. In my presentation I will talk about multiple eigenvalues and associated singular surfaces in stability and optimization problems for non-conservative systems. First, I consider circulatory systems without damping that describe stability of columns under follower loads and torques, friction-induced instabilities in rotor dynamics as well as aeroelastic stability problems. I present an algorithm for classification of generic singularities on the stability boundary of a circulatory system and list all generic singularities up to codimension 10. I plot generic singularities on the stability boundary for one-, two-, and three-parameter families of circulatory systems and show how to approximate the boundary near the singularities studying perturbation of simple and multiple eigenvalues. I illustrate the general theory by the examples from robotics, rotor dynamics and structural optimization. In the latter case structural optimization of the m-link Ziegler pendulum will be considered and derivation of optimality conditions as well as the connection of the optimal solutions to singularities on the stability boundary will be discussed. Then, I will study the effect of small dissipation on the stability of circulatory systems. In 1952 Ziegler found that an infinitesimally small amount of damping leads to a finite change in the stability domain of a two-link pendulum loaded by the follower force. In 1956 Bottema resolved this destabilization paradox by means of the Whitney umbrella singularity that as he established exists on the stability boundary of the damped Ziegler’s pendulum. I will talk about extensions of this result to general finite dimensional and continuous circulatory systems as well as to the gyroscopic systems with small damping and non-conservative positional forces. Examples of similar paradoxal phenomena from rotor dynamics, soil mechanics and magnetohydrodynamics will be considered in detail.

Keywords: Multiparameter stability problems; stability boundary; singularities; parametric optimization; multiple eigenvalues; dissipation-induced instabilities

  • Lecture (others)
    Lecture at the seminar of Prof. Felix Darve, Laboratoire 3S-R: Sols, Solids, Structures, Risques, 24.02.2011, Grenoble, France

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Permalink: https://www.hzdr.de/publications/Publ-16415
Publ.-Id: 16415


Re-visiting structural optimization of the Ziegler pendulum: singularities and exact optimal solutions

Kirillov, O.

Structural optimization of non-conservative systems with respect to stability criteria is a research area with important applications in fluid-structure interactions, friction-induced instabilities, and civil engineering. In contrast to optimization of conservative systems where rigorously proven optimal solutions in buckling problems have been found, for non-conservative optimization problems only numerically optimized designs were reported. The proof of optimality in the non-conservative optimization problems is a mathematical challenge related to multiple eigenvalues, singularities on the stability domain, and non-convexity of the merit functional. We present a study of the optimal mass distribution in a classical Ziegler’s pendulum where local and global extrema can be found explicitly. In particular, for the undamped case, the two maxima of the critical flutter load correspond to a vanishing mass either in a joint or at the free end of the pendulum; in the minimum, the ratio of the masses is equal to the ratio of the stiffness coefficients. The role of the singularities on the stability boundary in the optimization is highlighted and extension to the damped case as well as to the case of higher degrees of freedom is discussed.

Keywords: Non-conservative systems; oscillatory instabilities; stability boundary; singularity; parametric optimization

Permalink: https://www.hzdr.de/publications/Publ-16414
Publ.-Id: 16414


Singularities on the boundaries of magnetorotational instabilities and scaling laws

Kirillov, O.; Stefani, F.

In the theory of magnetorotational instability and its modern extensions such as the helical MRI, non-trivial scaling laws between the critical parameters are observed. In case of the standard MRI it is well known that the Reynolds and Hartmann numbers are scaled as Re ∼ Ha2 while for the helical MRI Re ∼ Ha3. What is less known is that the thresholds of SMRI and HMRI plotted as surfaces in the space of parameters, possess singularities that determine the scaling laws. Moreover, the two paradoxes of SMRI and HMRI in the limits of infinite and zero magnetic Prandtl number (Pm), respectively, sharply correspond to the singularities on the instability thresholds. In either case, it is the local Plücker conoid structure that explains the non-uniqueness of the critical Rossby number, and its crucial dependence on the Lundquist number. For HMRI, we have found an extension of the former Liu limit Roc ≃ −0.828 (valid for Lu = 0) to a somewhat higher value Ro ≃ −0.802 at Lu = 0.618 which is, however, still below the Kepler value.

Keywords: Standard Magnetorotational instability; Helical magnetorotational instability; interaction parameter; scaling law

Permalink: https://www.hzdr.de/publications/Publ-16413
Publ.-Id: 16413


Formation of Soluble Hexanuclear Neptunium(IV) Nano-Clusters in Aqueous Solution: Growth Termination of Actinide(IV) Hydrous Oxides by Carboxylates

Takao, K.; Takao, S.; Scheinost, A.; Bernhard, G.; Hennig, C.

Complexation of NpIV with several carboxylates (RCOO–; R = H, CH3, CHR’NH2; R’ = H, CH3, CH2SH) in moderately acidic aqueous solutions were studied by using UV-vis-NIR and X-ray
absorption spectroscopy. As pH increased, all investigated carboxylates initiated formation of watersoluble hexanuclear complexes, Np6(μ-RCOO)12(μ3-O)4(μ3-OH)4, where the neighboring Np atoms are connected by RCOO– syn-syn bridges and the triangular faces of the Np6 octahedron are capped with μ3-O2–/μ3-OH–. The structure information of Np6(μ-RCOO)12(μ3-O)4(μ3-OH)4 was extracted from the EXAFS data: Np–O2– = 2.22-2.23 Å (coordination number, N = 1.9-2.2), Np–O(RCOO–) and Np–OH– = 2.42-2.43 Å (N = 5.6-6.7 in total), Np···C(RCOO–) = 3.43 Å (N = 3.3-3.9), Np···Np(neighbor) = 3.80-3.82 Å (N = 3.6-4.0), Np···Np(terminal) = 5.39-5.41 Å (N = 1.0-1.2). For the simpler carboxylates, the gross stability constants of Np6(μ-RCOO)12(μ3-O)4(μ3-OH)4 and related monomers, Np(RCOO)(OH)2 +, were determined from the UV-vis-NIR titration data: R = H, log β6,12,–12 = 42.7 ± 1.2, log β1,1,–2 = 2.51 ± 0.05 at I = 0.62 M and 295 K; R = CH3, log β6,12,–12 = 52.0 ± 0.7, log β1,1,–2 = 3.86 ± 0.03 at I = 0.66 M and 295 K.

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Permalink: https://www.hzdr.de/publications/Publ-16412
Publ.-Id: 16412


Dual beam irradiation of nanostructured FeCrAl oxide dispersion strengthened steel

Chen, C. L.; Richter, A.; Kögler, R.; Talut, G.

Nanostructured ferritic oxide dispersion strengthened (ODS) alloy is an ideal candidate for fission/fusion power plant materials, particularly in the use of a first-wall and blanket structure of a next generation reactor. These steels usually contain a high density of Y–Ti–O and Y–Al–O nanoparticles, high dislocation densities and fine grains. The material contains nanoparticles with an average diameter of 21 nm and was treated by several cold rolling procedures, which modify the dislocation density. Structural analysis with HRTEM shows that the chemical composition of the initial Y2O3 oxide is modified to perovskite YAlO3 (YAP) and Y2Al5O12 garnet (YAG). Irradiation of these alloys was performed with a dual beam irradiation of 2.5 MeV Fe+/31 dpa and 350 keV He+/18 appm/dpa. Irradiation causes atomic displacements resulting in vacancy and self-interstitial lattice defects and dislocation loops. Extended SRIM calculations for ODS steel indicate a clear spatial separation between the excess vacancy distribution close to the surface and the excess interstitials in deeper layers of the material surface. The helium atoms are supposed to accumulate mainly in the vacancies. Additionally to structural changes, the effect of the irradiation generated defects on the mechanical properties of the ODS is investigated by nanoindentation. A clear hardness increase in the irradiated area is observed, which reaches a maximum at a close surface region. This feature is attributed to synergistic effects between the displacement damage and He implantation resulting in He filled vacancies. Fine He cavities with diameters of a few nanometers were identified in TEM images.

Keywords: Irradiation damage; ion implantation; ODS material; irradiation hardening

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Permalink: https://www.hzdr.de/publications/Publ-16411
Publ.-Id: 16411


Irradiation damage in dual beam irradiated nanostructured FeCrAl oxide dispersion strengthened steel

Richter, A.; Chen, C.-L.; Mücklich, A.; Kögler, R.

An oxide dispersion strengthened steel is produced which contains Y-Al-Ti-O nanoparticles with an average diameter of 21 nm. HRTEM analysis shows that the chemical composition of the Y2O3 oxide is modified with perovskite YAlO3 (YAP), Y2Al5O12 garnet (YAG) and Y4Al2O9 monoclinic (YAM) particles. Irradiation of these alloys was performed with a dual ion beam system operating simultaneously with 2.5 MeV Fe+ to 31 dpa and 350 keV He+ to 18 appm/dpa. Ion bombardment causes atomic displacements resulting in vacancy and self-interstitial lattice defects and dislocation loops. TRIM calculations for ODS steel indicate a clear spacial separation between vacancies and self-interstitials at which the vacancy distribution is close to the surface and the interstitials are deposited at a deeper position. The helium atoms mainly accumulate in the vacancies. Fine He cavities with diameters of a few nanometers were identified in HRTEM images. Additionally to structural changes, irradiation generated defects also affect the mechanical properties of the ODS steel. These were investigated by nanoindentation, which is a suitable measuring method as the irradiation damage is created within a thin surface layer. A clear hardness increase in the irradiated depth region was observed, which reaches a maximum close to the surface. This indicates the He condensation in the vacancy dominated region as predicted by the simulations.

Keywords: Irradiation damage; ion implantation; ODS material; radiation hardening of materials

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Permalink: https://www.hzdr.de/publications/Publ-16410
Publ.-Id: 16410


Doping of Si nanowires by ion implantation

Ou, X.; Geyer, N.; Kögler, R.; Schwen, D.; Werner, P.; Skorupa, W.

Silicon nanowires (Si NWs) have generated enormous scientific interest as building blocks for future nanoelectronics. Due to the quasi-one dimensional structure and a high surface to volume ratio of Si NWs controlled doping to change their electrical properties is challenging. Also, in order to understand the doping mechanism various techniques were used to qualify the spatial distribution and electrical activation of dopant atoms in Si. In our previous work strong surface segregation of implanted phosphorus was found after the rapid thermal annealing (RTA). [1] The studies were carried out for relatively thick Si NWs grown by Molecular Beam Epitaxy (MBE) with a diameter of ~100 nm. However, the preferable size for the future logic application is in the range below 20 nm. This work will also discuss the doping behavior of the thin Si NWs with diameters of sub-20 nanometer fabricated by metal-assisted chemical etching. Electrical characterization of the thin NWs was performed by SSRM of the NW cross section. The issues of the doping of such thin NWs by ion implantation and the diameter dependence of the boron activation in the Si NW are discussed.
[1] Xin Ou et al., Nano Letters, 10 (2010) 171.

Keywords: Nano wires; doping; ion implantation

Related publications

  • Lecture (Conference)
    Workshop "Ionen- und Positronenstrahlen", 04.07.2011, München, Germany

Permalink: https://www.hzdr.de/publications/Publ-16409
Publ.-Id: 16409


Laser accelerated protons captured and transported by a pulse power solenoid

Burris-Mog, T.; Harres, K.; Nürnberg, F.; Busold, S.; Bussmann, M.; Deppert, O.; Hoffmeister, G.; Joost, M.; Sobiella, M.; Tauschwitz, A.; Zielbauer, B.; Bagnoud, V.; Herrmannsdoerfer, T.; Roth, M.; Cowan, T. E.

Using a pulse power solenoid, we demonstrate efficient capture of laser accelerated proton beams and the ability to control their large divergence angles and broad energy range. Simulations using measured data for the input parameters give inference into the phase-space and transport efficiencies of the captured proton beams. We conclude with results from a feasibility study of a pulse power compact achromatic gantry concept. Using a scaled target normal sheath acceleration spectrum, we present simulation results of the available spectrum after transport through the gantry.

Keywords: laser acceleration; laser accelerated protons; pulse power; solenoid focusing; beam transport; proton ion cancer therapy

Permalink: https://www.hzdr.de/publications/Publ-16408
Publ.-Id: 16408


Fresnoite thin films grown by pulsed laser deposition: photoluminescence and laser crystallization

Müller, A.; Lorenz, M.; Brachwitz, K.; Lenzner, J.; Mittwoch, K.; Skorupa, W.; Grundmann, M.; Höche, T.

Fresnoite (Ba2TiSi2O8–BTS) thin films were grown on fused quartz, silicon (100), MgO (100), and aplane sapphire by pulsed laser deposition, and crystallized by subsequent thermal or flash lamp annealing. The corresponding texture evolution of the BTS thin films was studied by X-ray diffraction. The preferential (001) texture of the crystallised BTS films was found to be most pronounced on sapphire substrates. The broad photoluminescence band of the BTS thin films depends only weakly on temperature. The intensity of the BTS luminescence can be as high as that of the most efficient oxide scintillator materials. In order to qualify the fresnoite thin films for photonic applications, we demonstrate infrared-laser direct writing in amorphous BTS films which allows a local crystallisation and patterning. A subsequent considerable enhancement of luminescence intensity can be applied for UV-sensitive marking of nearly any object.

Keywords: pulsed laser deposition; photoluminescence; laser crystallization; flash lamp annealing; Fresnoite

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Permalink: https://www.hzdr.de/publications/Publ-16407
Publ.-Id: 16407


Ion beam synthesis of III-V nanocrystals in silicon

Prucnal, S.; Facsko, S.; Baumgart, C.; Schmidt, H.; Liedke, M. O.; Mücklich, A.; Zhou, S.; Skorupa, W.

Integration of III-V semiconductors with a silicon technology is crucial for the device performance. In this paper we present investigations of the microstructural, optical and electrical properties of III-V quantum dots (InAs, GaAs, InP and GaP) formed in silicon. The III-V QDs were obtained by means of sequential ion implantation and flash lamp annealing (FLA). Conventional selective etching was used to form the n-III-V/p-Si heterojunction. In case of InAs/Si heterostructures, the current-voltage measurement confirms the heterojunction diode formation with the ideality factor of 4.6. Kelvin Probe Force Microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.

Keywords: ion implantation; heteroepitaxy; indium arsenide; flash lamp annealing; quantum dots

Related publications

  • Invited lecture (Conferences)
    46.Deutsches Nutzertreffen Ionenimplantation, 24.11.2011, Blaubeuren, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16406
Publ.-Id: 16406


Kelvin probe force microscopy imaging on locally doped silicon nanowires

Baumgart, C.; Habicht, S.; Feste, S.; Helm, M.; Schmidt, H.

Kelvin probe force microscopy (KPFM) [1] is used for the nanoscale characterization of silicon nanowires (NWs). Horizontal NW arrays have been prepared from a silicon-on-insulator (SOI) starting material. After transferring the NW structures into the Si top layer by means of electron-beam lithography and reactive ion etching, the samples have been locally implanted with B and As. Activation of dopants was carried out by a rapid thermal annealing for 5 s at 1000 °C. Athena simulations showed that for the applied implantation and annealing conditions a box-like dopant distribution with comparable concentration of activated dopants can be assumed [2]. Quantitative dopant profiling by means of KPFM is successfully employed to locate the junctions along the B-doped and As-doped Si NWs. In addition, the influence of local intrinsic electric fields [3] is discussed for the investigated SOI structures.
References
[1] C. Baumgart, M. Helm, H. Schmidt, Phys. Rev. B 80, 085305 (2009). [2] S. F. Feste, J. Knoch, S. Habicht, D. Buca, Q.-T. Zhao, S. Mantl, Solid-State Electronics 53, 1257 (2009). [3] C. Baumgart, A.-D. Müller, F. Müller, and H. Schmidt, Phys. Stat. Sol. A 208, 777 (2011).

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  • Poster
    Subtherm 2011, 25.-27.10.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16405
Publ.-Id: 16405


Gas phase silanization at normal pressure of Si-based integrated light emitters for smart biosensor applications

Germer, S.; Cherkouk, C.; Rebohle, L.; Helm, M.; Skorupa, W.

A different silanization method for SiO2 surfaces has been raised for Si-based light emitter which are considered as light sources in sensors for the detection of harmful biomolecules. This approach uses a special experimental setup for gas phase silanization (GPS) and is based on the evaporation and deposition in nitrogen atmosphere at normal pressure for 15 minutes with different silane volumes. The light emitter has a SiO2 passivation layer on the top which was hydrolyzed in an in situ hybridization chamber and catalyzed with MES (2-(N-morpholino)ethanaesulfone acid hydrate) buffer solution. Afterward, the substrates were silanized with the GPS method using the organosilane (3-Aminopropyl)trimethoxysilane (APTMS). Infrared spectroscopy, X-ray spectroscopy and Atomic force microscopy were used to control and characterize the structure of the SiO2 surface and the APTMS layer. The results demonstrate a successful covalent binding of the coupling agent and the interaction of the deposited molecules with each other. The roughness of the modified surface was investigated by the Atomic force microscopy. The silanized samples show rough and textured surfaces. At last, the suitability of the developed GPS method was verified on light emitters.

Keywords: Si-based light emitter; biosensor; APTMS; silanization; amines

Related publications

  • Thesis / Students' report
    Technische Universität Freiberg, 2010
    76 Seiten

Permalink: https://www.hzdr.de/publications/Publ-16404
Publ.-Id: 16404


Investigation of rare earth implanted SiO2 thin films for Down-conversion applications in Photovoltaic's

Germer, S.; Günz, C.; Lehmann, J.; Rebohle, L.; Helm, M.; Skorupa, W.

In this report we present our recent investigations of rare earth (Ce, Tb) implanted SiO2 thin films for Down-conversion (DC) as an application for solar cells. Photovoltaic modules (PV) are showing high losses in the ultra violet range of the incident sunlight, because of band gap losses and front layer absorption. DC layers are applied to the front surface of photovoltaic cells to enhance solar cell efficiency

Keywords: down-conversion; photovoltaic; rare earth atoms; solar cells

Related publications

  • Poster
    Subsecond thermal processing of Advanced Materials 2011, 24.-28.10.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16403
Publ.-Id: 16403


Liquid phase processing in the millisecond range for III-V heterostructures in silicon

Prucnal, S.; Facsko, S.; Baumgart, C.; Schmidt, H.; Liedke, M. O.; Mücklich, A.; Zhou, S.; Skorupa, W.

Integration of III-V semiconductors with a silicon technology is crucial for the device performance. In this paper we present investigations of the microstructural, optical and electrical properties of III-V quantum dots (InAs, GaAs, InP and GaP) formed in silicon. The III-V QDs were obtained by means of sequential ion implantation and flash lamp annealing (FLA). Conventional selective etching was used to form the n-III-V/p-Si heterojunction. In case of InAs/Si heterostructures, the current-voltage measurement confirms the heterojunction diode formation with the ideality factor of 4.6. Kelvin Probe Force Microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.

Keywords: ion implantation; heteroepitaxy; indium arsenide; flash lamp annealing; quantum dots

Related publications

  • Invited lecture (Conferences)
    30.Deutsches Nutzertreffen RTP und Heissprozesse, 23.-23.11.2011, Blaubeuren, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16402
Publ.-Id: 16402


In-medium operator product expansion for heavy-light-quark pseudoscalar mesons

Zschocke, S.; Hilger, T.; Kämpfer, B.

The operator product expansion (OPE) for heavy-light-quark pseudoscalar mesons (D -mesons and B -mesons) in medium is determined, both for a moving meson with respect to the surrounding medium as well as for a meson at rest. First of all, the OPE is given in terms of normal-ordered operators up to mass dimension 5, and the mass of the heavy quark and the mass of the light quark are kept finite. The Wilson coefficients of such an expansion are infrared (IR) divergent in the limit of a vanishing light-quark mass. A consistent separation of scales necessitates an OPE in terms of non-normal-ordered operators, which implies operator mixing, where the IR-divergences are absorbed into the operators. It is shown that the Wilson coefficients of such an expansion are IR-stable, and the limit of a vanishing light-quark mass is perfomed. Details of the major steps for the calculation of the Wilson coefficients are presented. By a comparison with previous results obtained by other theoretical groups we have found serious disagreements.

Permalink: https://www.hzdr.de/publications/Publ-16401
Publ.-Id: 16401


Light-emission from rare-earth implanted amorphous silicon dioxide layers

Skorupa, W.; Rebohle, L.

Over the last more than 15 years we have been employing ion beam processing to dope gate-type amorphous silicon dioxide layers grown by thermal oxidation with a variety of species, mostly rare earth elements, to use these layers for the purpose of electroluminescence from a MOS capacitor device based on silicon technology. The main motivation for this work was the integration of optoelectronic functionality into silicon-based electronic circuits as one of the key challenges for future semiconductor applications. Here we report on different rare earth (RE) luminescent centres embedded into the silicon dioxide layer of purpose-designed Metal-Oxide-Silicon-based Light Emitting Devices (MOSLEDs) with advanced electrical performance. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electrical and electroluminescence properties of these devices are discussed in respect of possible applications for biosensing. Most of our work was recently published in one of the Springer textbook series [1]. Special devotion will be given in the talk to Akos G.Revesz who died in 2008 [2]. He was one of the pioneers of the physico-chemistry of amorphous silicon dioxide devoted to MOS technology.
[1] L.Rebohle & W.Skorupa “Rare-Earth Implanted MOS Devices for Silicon Photonics”, Springer Series in Materials Science vol.142, 2010
[2] http://www.electrochem.org/dl/interface/sum/sum08/su08_p20-22.pdf

Keywords: silicon dioxide; ion implantation; MOSLED; rare earth atoms; electroluminescence

Related publications

  • Invited lecture (Conferences)
    EMRS Fall Meeting, Symp.B: Amorphous nanostructure materials, 19.-23.09.2011, Warsaw, Poland

Permalink: https://www.hzdr.de/publications/Publ-16400
Publ.-Id: 16400


Mikrofluidisches System zum Nachweis von hormonaktiven Substanzen in wässrigen Lösungen

Cherkouk, C.; Rebohle, L.; Howitz, S.; Skorupa, W.

In dieser Arbeit wird ein mikrofluidisches System zum Nachweise von hormonaktiven Substanzen (engl. EDC´s) in wässrigen Lösung vorgestellt. Diese Plattform-Technologie besteht aus vier getrennten mikrofluidischen Einheiten aus Polydimethylsiloxan (PDMS) und Glas, und bietet damit die Möglichkeit einen selektiven Nachweis von mindestens zwei Substanzen pro ein Einweg Chip, dessen Oberfläche mit den jeweiligen Rezeptoren immobilisiert ist. Der Chip selbst enthält eine integrierte Silizium-basierte Lichtquelle. Das Nachweiskonzept basiert auf der direkten Fluoreszenzanalyse. Zur Optimierung der elektrischen Parameter wurden Elektrolumineszenzmessungen (EL) als Funktion der Farbstoffkonzentration( QD800) im Kanal durchgeführt.

Keywords: Si-basierter Lichtemitter; Biosensor; Mikrofluidik; Fluoreszenz; Estrogen; EDC

  • Poster
    10. Dresdner Sensor-Symposium, 05.-07.12.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16399
Publ.-Id: 16399


Flow field assessment under a plunging liquid jet

Kendil, F. Z.; Danciu, D. V.; Schmidtke, M.; Bousbia, A. S.; Lucas, D.; Krepper, E.; Mataoui, A.

Within the current study, experimental investigations and computational fluid dynamics (CFD) simulations were performed to investigate the flow field structure developed under a turbulent liquid jet plunging into a quiescent pool of water. This topic is still challenging for CFD codes. Indeed, the study of turbulence in two-phase bubbly flows is one domain where experimental, numerical, and theoretical work is being extensively done nowadays. A correct description of closure laws for drag, lift, and interfacial forces is of great importance in numerical simulations.
Most critical with respect to CFD is the impact region between the jet and free surface of the liquid pool. Here, a complex interaction between surface waves and turbulence leads to the entrainment of air. These phenomena occur on very small scales. Up to now, it is not possible to resolve all relevant scales in one simulation due to limited computational resources. Therefore in this work, all phenomena above the pool surface and the impact region are excluded and the focus is set on the development of the flow field below the pool surface. The jet is modeled as a two-phase bubbly flow injecting into the pool.
For this purpose, the Particle Image Velocimetry (PIV) was utilized as measuring technique. Velocity fields for both impinging region and recirculation zone developed in the tank below the free surface were quantified and instantaneous and time-averaged velocity fields were obtained. For test cases where air entrainment occurred, only the recirculation region situated outside the bubble plume was quantified.On the other hand, the numerical simulations were performed using ANSYS-CFX 12.0, a commercial CFD package that solves the Navier-Stokes equations via a finite volume method and a coupled solver. The 2D as well as 3D simulation results are presented and compared with experimental results. Comparisons with the experimental data reveal satisfactory predictions of mean flow quantities, obtained by applying proper models of inter-phase momentum transfer.

Permalink: https://www.hzdr.de/publications/Publ-16398
Publ.-Id: 16398


Electrical Transport in Individual ZnO Nanorods Studied by Photo-Conductive Atomic-Force Microscopy

Teichert, C.; Beinik, I.; Kratzer, M.; Brauer, G.; Chen, X. Y.; Hsu, Y. F.; Djurisic, A.

One-dimensional ZnO nanostructures exhibit technological potential for many device applications, like efficient low-cost ZnO nanorod-polymer solar cells [1]. Conductive atomic-force microscopy (AFM) is a valuable tool for nanometer-scale electrical characterization of such nanorods [2]. Here, we present a complementary study of electrical transport in individual upright standing ZnO nanorods (NRs) grown by thermal evaporation [4] using conductive AFM (C-AFM) and photoconductive AFM (PC-AFM) [5]. Initially, the electrical properties of the arrays of upright standing ZnO NRs were characterized using two-dimensional current maps measured at different bias voltages applied to the sample contact mode. Further, C-AFM was utilized to determine the local current-to-voltage (I-V) characteristics of the top and side facets of individual upright standing NRs. PC-AFM investigations reveal that I-V curves taken from a single upright standing NR under illumination appear more degraded with respect to the non-illuminated state. Using PC-AFM, we also observed persistent photoconductivity from a single ZnO NR. Both phenomena can be attributed to oxygen desorption/re-adsorption from the ZnO NR surface.
Supported by Austrian Science Fund FWF under project # P19636.
[1] E. Greene, et al., Nano Lett. 5, 1231 (2005).
[2] G. Brauer, et al., Phys. Status Solidi C 6, 2556 (2009).
[4] Y. F. Hsu, et al., Appl. Phys. Lett. 92, 133507 (2008).
[5] H. Sakaguchi, et al., Jpn. J. Appl. Phys. 38, 3908 (1999).

Keywords: ZnO nanostructures; conductive atomic-force microscopy; electrical characterization; photoconductivity

  • Lecture (Conference)
    European Materials Research Society, Spring Meeting, 09.-13.05.2011, Nice, France

Permalink: https://www.hzdr.de/publications/Publ-16397
Publ.-Id: 16397


Surface complexation of U(VI) at the mineral-water interface probed by time-resolved vibrational spectroscopy – Identification of binary and ternary surface species

Foerstendorf, H.; Müller, K.; Heim, K.; Meusel, T.; Brendler, V.

The identification of the molecular interactions occurring at solid-liquid interfaces is of great significance to the assessment of the migration behavior of heavy metal ions in the environment. In particular, the dissemination of radioactive metals, such as uranium (U), in soils and groundwater aquifers is determined by sorption and desorption processes at mineral surfaces.
The molecular structures of the sorption complexes are mainly obtained by means of spectroscopic investigations of batch samples. These experiments provide no molecular information about the dynamic processes occurring during complex formation at the solid-liquid interface. However, such information, in particular about the early sorption steps, is expected to improve the understanding of the sorption processes. Therefore, we applied attenuated total reflection Fourier-transform infrared (ATR FT-IR) spectroscopy for in situ studies of the molecular processes at solid-liquid interfaces in real time with time resolution in the sub minute range and under selective conditions approaching near environmental relevant conditions [1].
In this work, we provide vibrational spectroscopic data from binary and ternary sorption systems, namely U(VI)/TiO2 and U(VI)/atm. CO2/ferrihydrite(Fh), respectively. From the binary U(VI)/TiO2-system the subsequent formation of two different surface species was observed [2]. These species were identified as inner and outer sphere uranyl complexes substantiating basic principles of surface complexation modeling which are based on thermodynamic approaches.
The spectral data obtained from in situ sorption experiments of U(VI) onto Fh demonstrate the formation of a unique U(VI) surface species irrespective of the absence or presence of atmospherically derived CO2. In contrast, the surface speciation of the carbonate anions significantly changes upon U(VI) sorption strongly suggesting the formation of ternary surface species. Moreover, the online monitoring of the sorption and desorption reactions allows the analysis of the sorption kinetics. Because of the different reaction rates found for carbonate sorption and desorption reactions on pristine Fh and Fh pretreated with U(VI), it is shown that carbonate sorption is a faster reaction than the sorption of U(VI). From the structural information of the ternary sorption complex derived from the spectroscopic results, molecular structures of the surface species are proposed [3].

References:

[1] Voegelin, A. et al. (2003) Environ. Sci. Technol. 37, 972-978.
[2] Müller, K. et al. (2012) Geochim. Cosmochim. Acta 76, 191-205.
[3] Foerstendorf, H. et al. (2012) Journal of Colloid and Interface Science, submitted.

  • Lecture (Conference)
    'Uranium biogeochemistry: transformations and applications', 11.-16.03.2012, Ascona, Schweiz

Permalink: https://www.hzdr.de/publications/Publ-16396
Publ.-Id: 16396


Photoresponse in Materials for Solar Cell Applications studied by Means of Photoconductive Atomic-Force Microscopy

Beinik, I.; Kratzer, M.; Lorbek, S.; Wachauer, A.; Brauer, G.; Chen, X.; Hsu, Y. F.; Djurisic, A.; Montaigne-Ramil, A.; Bliznyuk, V.; Usluer, O.; Egbe, D.; Sariciftci, N. S.; Teichert, C.

Conductive probe based atomic force microscopy techniques like conductive atomic-force microscopy (C-AFM) [1,2], photoconductive AFM (PC-AFM) [3, 4], and photo-assisted Kelvin probe force microscopy (PA-KPFM) [5,6] provide an opportunity to study electronic and optoelectronic properties of surfaces and interfaces with nanometer resolution.
Here, we present our results on investigations of: 1) photoconductivity of single upright standing ZnO nanorods (NRs) grown by thermal evaporation [7], and 2) photoresponse in thin organic semiconductor films, namely AnE-PVstat:PCBM blends. The measurements have been performed in ambient or under N2 atmosphere using MFP3D from Asylum Research and in UHV with room temperature AFM/STM from Omicron extended with an external illumination system employing lock-in detection.
First, a novel PC-AFM setup which has been implemented to study the optoelectronic properties of individual upright standing ZnO NRs under illumination from the top will be presented. Using this setup we investigated transient photocurrent behavior and recorded photocurrent spectra from single upright standing ZnO NRs. A persistent photoconductivity from single ZnO NRs for the time intervals up to 1800 s has been observed. Simultaneously, the photoconductivity spectra (Fig. 1) revealed that the minimum photon energy sufficient for photocurrent excitation is 3.1 eV, which is at least 100 mV less than the energy sufficient for the band-to-band excitation. The mechanism of the persistent photoconductivity in ZnO is discussed in the frame of existing theoretical models.
In the second part, the results on investigations of the photoresponse in AnE-PVstat:PCBM blends spin-coated on PEDOT:PSS/ITO/ will be presented. The AnE-PVstat:PCBM blend acts as an active layer where the charge generation (by illumination) and charge separation processes take place. The charge separation in this structure occurs due to the presence of the effective electric field between AnE-PVstat, which serves as a donor, and PCBM which serves as an acceptor. The heterogeneity of the films, in turn, impacts the charge carrier generation, separation, and transport. Here, we analyzed the correlation between the heterogeneity and efficiency of the light-to-electricity conversion for (1:1), (1:2) and (1:3) AnE-PVstat to PCBM blend ratios. The 2D current maps recorded under illumination reveal the regions of high photoresponse for the case of (1:3) blend ratio, which is also confirmed by PA-KPFM and local current-to-voltage characteristics. The results on local photoresponse characterization of the samples with different blend ratios are correlated with the data on the light-to-electricity conversion efficiency obtained macroscopically.

1 S. Kremmer, C. Teichert, E. Pischler, H. Gold, F. Kuchar, and M. Schatzmayr, Surf. Interface Anal. 33, 168-172 (2002).
2 C. Teichert and I. Beinik, in Scanning Probe Microscopy in Nanoscience and Nanotechnology 2, edited by B. Bhushan (Springer, Berlin Heidelberg, 2011), pp. 691-721.
3 H. Sakaguchi, F. Iwata, A. Hirai, A. Sasaki, and T. Nagamura, Jpn. J. Appl. Phys. 38, 3908-3911 (1999).
4 D.C. Coffey, O.G. Reid, D.B. Rodovsky, G.P. Bartholomew, and D.S. Ginger, Nano Letters 7, 738-744 (2007).
5 L. Kronik and Y. Shapira, Surface Science Reports 37, 1-206 (1999).
6 E.J. Spadafora, R. Demadrille, B. Ratier, and B. Grévin, Nano Letters 10, 3337-3342 (2010).
7 Y.F. Hsu, Y.Y. Xi, A.B. Djurišić, and W.K. Chan, Applied Physics Letters 92, 133507 (2008).

Keywords: ZnO nanorods; organic semiconductor films; Photoconductive Atomic-Force Microscopy

  • Lecture (Conference)
    International Workshop on Scanning Probe Microscopy for Energy Applications, 08.-10.06.2011, Mainz, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16395
Publ.-Id: 16395


Electrical Transport in Individual ZnO Nanorods Studied by Photo-Conductive Atomic-Force Microscopy

Teichert, C.; Beinik, I.; Kratzer, M.; Brauer, G.; Chen, X. Y.; Hsu, Y. F.; Djurisic, A.

One-dimensional ZnO nanostructures exhibit technological potential for many device applications, like efficient low-cost ZnO nanorod-polymer solar cells [1]. Conductive atomic-force microscopy (AFM) is a valuable tool for nanometer-scale electrical characterization of such nanorods [2]. Here, we present a complementary study of electrical transport in individual upright standing ZnO nanorods (NRs) grown by thermal evaporation [4] using conductive AFM (C-AFM) and photoconductive AFM (PC-AFM) [5]. Initially, the electrical properties of the arrays of upright standing ZnO NRs were characterized using two-dimensional current maps measured at different bias voltages applied to the sample contact mode. Further, C-AFM was utilized to determine the local current-to-voltage (I-V) characteristics of the top and side facets of individual upright standing NRs. Further, we pioneered the application of PC-AFM to resolve the photoconductivity spectra measured from a single as-grown ZnO NR. PC-AFM is similar in concept to C-AFM: the sample surface is biased and additionally irradiated from a Xe light source connected to a monochromator. The current through the AFM tip is measured as a function of illumination intensity and/or wavelength. PC-AFM investigations reveal that I-V curves taken from a single upright standing NR under illumination appear more degraded with respect to the non-illuminated state. Analyzing the photoconductivity spectra it has been found that the band gap of ZnO NR is reduced by about 220 meV with respect to the known value of 3.37 eV at room temperature. Using PC-AFM, we also observed persistent photoconductivity from a single ZnO NR. We believe that both phenomena can be attributed to the processes of oxygen desorption/re-adsorption from the ZnO NR surface. Moreover, these observations are in good agreement with theoretical predictions of the influence of oxygen vacancies on the electronic structure of ZnO [6].
Supported by Austrian Science Fund FWF under project # P19636.
[1] E. Greene, et al., Nano Lett. 5, 1231 (2005).
[2] G. Brauer, et al., Phys. Status Solidi C 6, 2556 (2009).
[3] C. Teichert and I. Beinik, in “Scanning Probe Microscopy in Nanoscience and Nanotechnology”, Vol. 2,
Edited by B. Bhushan, (Springer, Heidelberg, 2011).
[4] Y. F. Hsu, Y. Y. Xi, A. B. Djurišić, W. K. Chan, Appl. Phys. Lett. 92, 133507 (2008)
[5] H. Sakaguchi, et al., Jpn. J. Appl. Phys. 38, 3908 (1999).
[6] S. Lany and A. Zunger, Physical Review B 72, 035215 (2005).

Keywords: ZnO Nanorods; Photo-Conductive Atomic-Force Microscopy; electrical transport

  • Poster
    Materials Research Society (MRS), Spring Meeting, 25.-29.04.2011, San Francisco, USA

Permalink: https://www.hzdr.de/publications/Publ-16394
Publ.-Id: 16394


Model experiments to the magnetic field effect on the continuous casting process

Timmel, K.; Eckert, S.; Gerbeth, G.

Die Magnetfeldwirkung auf die Stahlströmung im kontinuierlichen Stranggussverfahren wurde experimentell an einem verkleinerten Flüssigmetallmodell untersucht. In vorangegangenen Messungen mit dem Ultraschall-Doppler-Verfahren zeigte sich bereits ein Einfluss des Magnetfeldes sowohl auf die gemittelte Strömung als auch auf die zeitlichen Geschwindigkeitsschwankungen. Mittels einer schnelleren Ultraschall-Konfiguration und dem Einsatz von Potentialsonden wurde das Zeitverhalten der Strömung nun näher untersucht und ein Überblick über die ersten Ergebnisse gegeben.

Keywords: continuous casting; liquid metal model; magnetic field; Ultrasound Doppler Method; potential probes

  • Lecture (Conference)
    Symposium on Simulation and Modeling of Metallurgical Processes "SymSim", 07.-10.12.2011, Planner Alm, Österreich

Permalink: https://www.hzdr.de/publications/Publ-16393
Publ.-Id: 16393


Photooxidation in Combination with Nanotechnologies - Principles, Developments and R&D Approaches of an Advanced Technology for Water and Air Treatment - Uviblox®

Seitz, F.; Pollmann, K.; Mackenzie, K.; Opiolka, S.

Many organic and oxidizable inorganic substances are main targets for oxidation and destruction during treatment, purification and disinfection of contaminated ground water, waste water, air, soil and waste gas and odor. Uviblox® technology uses the effects of photooxidation and photocatalytical processes by middle and low pressure UV lamps for technical systems. There are many possibilities for combination and optimisation of photooxidation with other technologies like nanotechnologies. Degradation processes can be enforced by nano structures of photocatalysts significantly. Different approaches are strongly pursued in research & development projects like NanoAqua, Fe-NANOSIT and nanoblox. These projects search for different ways of applying and handling the photocatalytical nano particles like TiO2 and ZnO. Biological surface layers, magnetite, transparent and reflecting materials are tested for suspending nano particle solids as well as for coating fixtures. Research results are very promising and economic application of nano photocatalysts in water and gas phase for purification seems likely. Any presumed ecotoxicity was not found for the examined nanoparticles so far.

Keywords: photooxidation; photocatalysis; nanoparticle

  • Journal of Advanced Oxidation Technologies 14(2011)2, 260-265

Permalink: https://www.hzdr.de/publications/Publ-16392
Publ.-Id: 16392


Electrical Transport of Single ZnO Nanorods studied by Photo-Conductive AFM

Kratzer, M.; Beinik, I.; Teichert, C.; Brauer, G.; Chen, X. Y.; Durisic, A. B.; Hsu, Y. F.

Semiconductor nanomaterials have come into the focus of research due to their potential for electronic and optoelectronic applications. Their properties strongly depend on their size, morphology, and dimension. In this work, we concentrate on the electrical and optoelectric properties of individual nanorods (NRs) in arrays of upright standing ZnO NRs. ZnO is a wide band gap semiconductor with potential application in solar cells [1] and gas sensors [2]. The NRs under investigation were grown via thermal evaporation (TE) and via hydrothermal synthesis (HT) [3,4]. In order to investigate such small structures atomic force microscopy (AFM) based methods have been applied. We utilized conventional conductive atomic force microscopy (C-AFM) [5] and additionally realized a photo conductive atomic force microscopy (PC-AFM) [6, 7] setup for our measurements. Examination of the current-to-voltage (I-V) characteristics measured for the top and side facets of individual TE grown NRs yielded Schottky like behavior with different barrier heights and ideality factors for both facet types [8]. The PC-AFM measurements on the top facet of TE grown NRs revealed a clear photo-response upon illumination with white light. Additionally, persistent photo-conductivity could be observed, manifesting itself by a very slow recovery to the initial dark conductivity level after light is switched off. Comparison of the dark and illuminated I-V characteristics revealed an increase in p-type conductivity for the illuminated case. The results will be discussed referring to the current models.

[1] M. Law, L. E. Greene, J. C. Johnson, R. Saykally, P. Yang, Nat. Materials 4, 455 (2005).
[2] H.-J. Lim, D. Y. Lee, Y.-J. Oh, Sensors and Actuators A: Physical 125, 405 (2006).
[3] A.B. Djurisic, Y. H. Leung, Small 2, 944 (2006).
[4] Y. F. Hsu, Y. Y. Xi, A. B. Djurišić, W. K. Chan, Appl. Phys. Lett. 92, 133507 (2008).
[5] C. Teichert, I. Beinik, in Scanning Probe Microscopy in Nanoscience and Nanotechnology, (vol. 2) edited by B. Bhushan (Springer, Heidelberg, 2011).
[6] H. Sakaguchi, F. Iwata, A. Hirai, A. Sasaki, T. Nagamura, Jpn. J. Appl. Phys. 38, 3908 (1999).
[7] D. C. Coffey, O. G. Reid, D. B. Rodovsky, G. P. Batholomew, D. S. Ginger, Nano Lett. 7, 738 820 (2007).
[8] I. Beinik, M. Kratzer, A. Wachauer, L. Wang, R. T. Lechner, C. Teichert, C. Motz, W. Anwand,
G. Brauer, X. Y. Chen, Y. F. Hsu, A. B. Djurišić, J. Appl. Phys. accepted .

Keywords: Electrical Transport of Single ZnO Nanorods; Photo-Conductive AFM

  • Lecture (Conference)
    3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, 11.-16.09.2011, Traunkirchen, Austria

Permalink: https://www.hzdr.de/publications/Publ-16391
Publ.-Id: 16391


On the T2 deep level in zinc oxide thin films

Schmidt, M.; Karsthof, R.; Schmidt, F.; von Wenckstern, H.; Ellguth, M.; Pickenhain, R.; Grundmann, M.; Brauer, G.

For the majority of deep levels studied in n - type conducting ZnO by means of capacitance spectroscopy only the activation energy and the high temperature limit of the electron capture cross - section are known since these quantities can be evaluated easily from the temperature dependence of the trap’s thermal electron emission rate. We focused on the T2 level occuring in pulsed laser deposition grown ZnO thin films. In order to tune the T2 concentration in the samples, we employed different growth and annealing conditions as well as the implantation of oxygen and zinc ions, respectively. The physical properties of T2 were studied by sophisticated deep level transient spectroscopy and photo - capacitance experiments. These experiments revealed a strong dependence of the thermal activation energy, 185meV < Ea < 280meV, on the concentration of T2 in the sample as well as on the electric field (Poole - Frenkel effect). T2 was found to be preferentially generated under zinc rich conditions as both, the implantation of zinc ions and thermal annealing at low oxygen partial pressures increase its concentration. From photo - capacitance transients the photo - ionisation cross - section spectrum was calculated.

Keywords: T2 deep level in zinc oxide thin films

  • Lecture (Conference)
    DPG Frühjahrstagung der Sektion AMOP (SAMOP) und der Sektion Kondensierte Materie (SKM)2011, 13.-18.03.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16390
Publ.-Id: 16390


Basic structures of photonic integrated circuits for smart biosensor applications

Germer, S.; Rebohle, L.; Skorupa, W.; Helm, M.

In this report we present our recent developments for utilizing the Si-based light emitter consisting of a MOS structure for the detection of organic pollutants. In the latest approach the light emitters are intended to serve as light sources in smart biosensors [1, 2]. In fluid media the device is placed beneath the dye-labeled sample exciting the dye. This light emission can be recorded by an external detector. It was shown that the silanization of the device surface was successfully based on the covalent binding of the organosilane [3]. The harmlessness of the silanization method to the integrated light emitters was proved by comparing the electroluminescence spectra of Tb-based MOSLEDs before and after silanization. We further showed that the transparency is maintained. Similarly, the human estrogen receptor hERα could be immobilized effectively on the coated surface [3]. We also discuss our concept of an integrated light emitter and a receiver in a dielectric waveguide structure below the bioactive layer for the detection of harmful substances, like synthetic estrogens or plasticizer in drinking water. Optical properties of waveguides, e.g. the transmission, are very sensitive to changes of the effective refraction index, which might be induced by the immobilization of biomolecules on the waveguide surface or in cavity structures, e.g. photonic crystals. This lab-on-a-chip system provides fast light transmission without using of any additional lenses and achieves further portability and miniaturization.

[1] L. Rebohle, C. Cherkouk, S. Prucnal, M. Helm, W. Skorupa, Vacuum 83, 24 (2009)
[2] L. Rebohle, T. Gebel, R.A. Yankov, T. Trautmann, W. Skorupa, J. Sun, G. Gauglitz, R. Frank, Optical Materials 27, 1055 (2005)
[3] C. Cherkouk, L. Rebohle, W. Skorupa, T. Strache, H. Reuther and M. Helm, Journal of Colloid and Interface Science 337, 375 (2009)

Keywords: biosensor; waveguide; silanization; organosilane; photonic crystals

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    DOCTORAL STUDENTS CONFERENCE FOR THE DISCUSSION OF OPTICAL CONCEPTS, 21.-25.03.2011, Naumburg (Sachsen), Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16389
Publ.-Id: 16389


Si-based integrated photonic circuits: first approach

Germer, S.; Rebohle, L.; Helm, M.; Skorupa, W.

In this report we present our recent developments for utilizing the Si-based light emitter consisting of a MOS structure for the detection of organic pollutants. In the latest approach the light emitters are intended to serve as light sources in smart biosensors [1,2]. Now we discuss our concept of an integrated light emitter and a receiver in a dielectric waveguide structure below the bioactive layer for the detection of harmful substances, like synthetic estrogens or plasticizer in drinking water. Optical properties of waveguides, e.g. the transmission, are very sensitive to changes of the effective refraction index, which might be induced by the immobilization of biomolecules on the waveguide surface or in cavity structures, e.g. photonic crystals. The guiding of the light depends on the geometry and material composition of the waveguide. First waveguides were fabricated through plasma enhanced chemical vapor deposition (PECVD) and optical photolithography with following etching steps. Afterwards the layer thicknesses were analyzed by ellipsometry and the surface roughness via scanning electron microscopy (SEM). However, the investigation of the different waveguides will be allowed through finite element method (FEM) simulations (COMSOL) and experimentally through a setup for the optical transmission measurement. In summary, this lab-on-a-chip system provides fast light transmission without using of any additional lenses and achieves further portability and miniaturization.

[1] L. Rebohle, C. Cherkouk, S. Prucnal, M. Helm, W. Skorupa, Vacuum 83, 24 (2009)
[2] L. Rebohle, T. Gebel, R.A. Yankov, T. Trautmann, W. Skorupa, J. Sun, G. Gauglitz, R. Frank, Optical Materials 27, 1055 (2005)

Keywords: biosensor; waveguide; photonic crystals

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    PhD Seminar HZDR, 26.09.2011, Dresden, Deutschland
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    6th PhD seminar, 05.-07.10.2011, Rabenberg, Deutschland
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    PhD Seminar HZDR, 07.05.2012, Dresden, Deutschland
  • Lecture (Conference)
    PhD Seminar, 16.09.2013, Dresden, Deutschland
  • Lecture (Conference)
    HZDR PhD Seminar, 07.-09.10.2013, Bautzen, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16388
Publ.-Id: 16388


Kelvin probe force microscopy on doped semiconductor nanostructures with local, carrier-depleted space charge regions

Baumgart, C.; Müller, A.-D.; Müller, F.; Helm, M.; Schmidt, H.

Failure analysis and optimization of semiconducting devices require knowledge of their electrical properties. Kelvin probe force microscopy (KPFM) is the most promising non-contact electrical nanometrology technique to meet the demands of today‘s semiconductor industry. We present its applicability to locally doped silicon structures. Quantitative dopant profiling by means of KPFM measurements is successfully demonstrated on a conventional static random access memory (SRAM) cell and on cross-sectionally prepared Si epilayers by applying a recently introduced new explanation of the measured KPFM signal [1]. Additionally, the influence of local, carrier-depleted space charge regions and of the electric fields across them is discussed. It is explained how drift and diffusion of injected charge carriers in intrinsic electric fields influence the surface region of the investigated semiconductor and thus may disturb the detected KPFM bias.
[1] C. Baumgart, M. Helm, H. Schmidt, Phys. Rev. B 80, 085305 (2009).

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    DPG Frühjahrstagung der Sektion AMOP (SAMOP) und der Sektion Kondensierte Materie (SKM) 2011, 13.-18.03.2011, Dresden, Duetschland

Permalink: https://www.hzdr.de/publications/Publ-16387
Publ.-Id: 16387


Positron annihilation at planar defects in oxides

Kuriplach, J.; Brauer, G.; Melikhova, O.

Transition metal oxides are interesting materials with important prospective applications. Planar defects like stacking faults and grain boundaries are often present in such materials and may affect their properties. In particular, it has been recently shown that a zinc oxide (ZnO) single crystal contain a large amount of stacking faults [1]. Furthermore, nanocrystalline materials based on zirconia (ZrO2) are also frequently studied and their characteristics are significantly influenced by grain boundaries [2]. The planar defects just mentioned exhibit free volumes which, in principle, are detectable using positron annihilation spectroscopy. In this contribution, we present a preliminary theoretical study of positron interaction with planar defects in oxides.
First, we examine several stacking faults (SFs) in ZnO, following their structural investigation presented in [3]. It is found that studied SFs represent rather shallow positron traps with the corresponding positron lifetime exceeding the bulk one slightly only. It might be necessary to consider interactions of SFs with other defects (vacancies, impurities) in order to characterize more precisely their effect on materials’ properties, including positron response.
Second, we perform the case study of the Sigma 5 (310) [001] symmetric tilt grain boundary [4,5] in ZrO2. In this case, positrons also localize at the grain boundary, but such localization is affected by the presence of yttrium (Y3+) ions which are often added to zirconia to improve its mechanical properties. The reason is that Y3+ ions influence the charge state of the grain boundary studied.

[1] W. Anwand et al., J. Appl. Phys. 109, 063516 (2011).
[2] J. Čížek et al., Phys. Rev. B 81, 024116 (2010).
[3] Y. Yan et al., Phys. Rev. B 70, 193206 (2004).
[4] Z. Mao et al., J. Am. Ceram. Soc. 85, 1594 (2002).
[5] T. Oyama et al., Phys. Rev. B 71, 224105 (2005).

Keywords: ZnO; stacking faults; positron annihilation

  • Poster
    Tenth International Workshop on Positron and Positronium Chemistry (PPC-10), 05.-09.09.2011, Smolenice Castle, Slovakia

Permalink: https://www.hzdr.de/publications/Publ-16386
Publ.-Id: 16386


Effect of Sintering on Defects in Yttria Stabilised Zirconia

Prochazka, I.; Cizek, J.; Melikhova, O.; Anwand, W.; Brauer, G.; Konstantinova, T. E.; Danilenko, I. A.

A variable energy slow positron beam was utilised to investigate depth dependent effects of sintering on the tetragonal yttria stabilised zirconia nanopowders. Positron implantation was combined with the determination of Doppler broadened profiles of annihilation radiation. The results are consistent with recent positron lifetime data showing that sintering at elevated temperatures leads to a disappearance of pores and a significant grain growth, which is demonstrated by a strong suppression of positronium formation and a substantial decrease in concentration of open volume defects at triple points, respectively, with increasing sintering temperature. An existence of a subsurface layer of a relatively high content of defects was shown in sintered samples and tentatively attributed to arise from a diffusion of open volume defects from the sample interior toward the surface or from a sintering-induced surface modification.

Keywords: Yttria stabilised zirconia; sintered nanopowders; slow positron implantation spectroscopy

Permalink: https://www.hzdr.de/publications/Publ-16385
Publ.-Id: 16385


Structural Pattern of Cinnamic Acid on Different Substrates Probed by Slow Positron Beam Technique

Ganguly, B. N.; Anwand, W.; Brauer, G.; Wagner, A.

Cinnamic acid (phenyl acrylic acid) is an essential constituent of Cinnamon oil, and is well known for its medicinal values. The compound comprises of hydrogen bonded supra molecular structure due to strong hydrogen bonding between the carboxylic groups and other intermolecular hydrogen bonding as well. On the whole it forms a crystalline layered structure in solid state. In order to study its structural organization and orientation of the molecular functional groups it has been our astute interest if we could form thin layers of these molecules on suitable substrates. Thus, thin layer characteristics of cinnamic acid (CINN) on the two commonly used substrates namely: fused quartz plate and on silicon substrate has been attempted and they were subjected to Doppler broadening of positron annihilation radiation (DB) line shape analysis by slow positron beam on the range of 30 – 1200 eV energy to study the near surface properties. While CINN on quartz substrate showed a periodic pattern (the rippled nature) significant from the point of view of the layer structure, as compared to the pure solid state analysis, the results on the pure silicon substrate were not so regular, it is rather apparent that a strong substrate dependent property was noticed with the layer formation . The cause of this effect was also identified through coincidence DB analysis and another complementary technique XPS in corroboration and shall be presented.
The discussion on the organization of CINN on the quartz substrate as revealed from the DB will be presented.

Keywords: Cinnamic acid; thin layer characteristics; XPS; PAS

  • Poster
    Tenth International Workshop on Positron and Positronium Chemistry (PCC-10), 05.-09.09.2011, Smolenice Castle, Slovakia

Permalink: https://www.hzdr.de/publications/Publ-16384
Publ.-Id: 16384


Bestimmung langlebiger Radionuklide zur Datierung in den Geowissenschaften und der Kosmochemie

Merchel, S.; Rugel, G.; Akhmadaliev, S.

Keywords: accelerator mass spectrometry; AMS; geomorphology

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    Dresdener Geowissenschaftliches Kolloquium, 15.05.2012, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16383
Publ.-Id: 16383


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