The division Ion technology was split in two new groups:
The ion implanter group provides facilities for the ion-beam induced modification of solid samples in an energy range of 100 eV to 1 MeV. It is possible to irradiate surfaces up to a size of 200 mm in diameter. The ion implantation is used for both basic research and practical investigations in the field of the modification of surface sensitive properties as well as for doping and nanostructering in the semiconductor industry.
Group leader: Ulrich Kentsch
High energy ion beams can be used as fine instruments for analyzing of materials and modifying their electrical, optical, magnetic and other properties in microscopic and macroscopic scales. The main activity of the devision of ion accelerators is operation and development of ion beam systems for material analysis and for material modification as well as scientific and technical support of novel experiments with ion beams (development of new ion optical elements for laser accelerator and new methods of ion implantation, experiments with ion beams for nuclear physics, etc.)
Group leader: Dr. Shavkat Akhmadaliev
The department is dealing with projects and service for basic and application oriented investigations on the modification of surface sensitive properties, especially toughness, wear and friction, fatigue, adhesion, corrosion, transparent conductive oxides and biocompatibility by ion beam technologies (ion implantation, ion beam mixing and ion assisted deposition). Additional services of ion implantation can be offered.