Ion Beam Assisted Deposition (IBAD)
The combination of a vacuum deposition process with an additional bombardment of energetical ions allows the thin film synthesis of metastable phases, amorphous struktures or especially crystalline compositions for optical and electronical applications or corrosion, wear and friction decreasing coatings. The film density, composition, layer structure, porosity, purity, stress, microstructure and other properties can be influenced.
Advantages of the IBAD process:
- improved film adhesion
- high film density,
- low porosity,
- low substrate temperature
- texture control s
- synthesis of super hard materials
- reactive and nonreactive ion beam assistance is possible
Typical thin films made by IBAD:
Material
|
Evaporant
|
Ion
|
Energy
|
Temperature
|
a-C | C |
Ar+/Ne+
|
200...1000eV
|
<100°C
|
c-BN | B |
N2+ and N+/Ar+
|
300...1500eV
|
200...600°C
|
AlN | Al |
N2+ and N+
|
75...1000eV
|
<100°C
|
TiN | Ti |
N2+ and N+
|
100...30000eV
|
RT...600°C
|
TiAlN | Ti/Al |
N2+ and N+/Ar+
|
100...30000eV
|
RT...600°C
|
CNx | C |
N2+ and N+
|
100...1500eV
|
RT...400°C
|
Si3N4 | Si |
N2+ and N+
|
60...700eV
|
<200°C
|
metal oxides | Me (Zr, Al, Ti) |
O2+
|
100...1000eV
|
50...600°C
|
HTSC | BaF2, Cu, Y |
O2+
|
50eV
|
560...640°C
|
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