Boron ion implantation

(500 nm thick box profile by multiple implantation)

Dependence on implanted boron concentration [1,2]

  • Limited carrier concentration due to Ostwald ripening, formation of precipitates and outdiffusion.
  • No remarkable B diffusion after flash lamp annealing at about 2000°C.
Fig. 1  Diffusion and Ostwald ripening of boron in 6H-SiC (Timpl = 400°C).


[1] D. Panknin, W. Skorupa, H. Wirth, M. Voelskow, A. Mücklich, W. Anwand, G. Brauer, O. Gonzales-Varona, A. Perez-Rodriguez, J.M. Morante,
     Solid State Phenomena 69-70 (1999) 391
[2] D. Panknin, H. Wirth, A. Mücklich, W. Skorupa;
     submitted to  J. Appl. Phys