Thermal Processing

Thermal processes are used for thermal oxydation of silicon, annealing of radiation damage after ion beam traetment and for electrical activation of dopants as well as for drive-in-diffusion after ion implantation. For this purpose the following facilities are available:
 
   

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Two Horizontal Furnace Systems with three quarz tubes, DA62 (ELEKTROMAT)
 

Operating temperature	300...1150 °C
Process gases	O2 (wet and dry), O2+HCL, N2, N2+5%H2, Ar+7%H2 all of 5.0 purity
Wafer diameter	max. 100 mm
Wafer quantity	max. 50
Processes	Dry oxydation	Growth of high quality gate oxides, dox = (50...250) nm  Gases: dry O2, dry O2+3% HCl  Temperature range: (900...1100) °C
	Wet oxydation	Growth of thick field oxides, dox = (300...1500) nm  Gases: wet O2  Temperature range: (900...1150) °C
	Annealing	Annealing of radiation efects after ion implantation  Drive-in-diffusion after implantation  Metal contact forming Gases: N2, Ar, N2+5%H2, Ar+7% H2  Temperature range: (300...1150) °C

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