Thin Film Deposition

For thin layer deposition only physical vapour deposition (PCD) techniques with low thermal and radiation substrate stress are used. DC- and RF- high-rate magnetron sputtering, electron beam evaporation and evaporation from thermally heated crucibles are available.

The reactive sputter technique offers the advantage to deposite on substrates compound layers (oxides, oxynitrides, nitides) from elemental sputter targets by mixing Ar with reactive gases of O2 and/or N2 . Direct sputtering from insulating targets is also possible using the RF-sputtering mode. Heating or cooling of the substrate, bias sputtering and sputter etching also can be applied. The sputter apparatus is equiped with a residual gas analyzer and two optical emission spectrometers to control the residual gas composition and the the plasma parametrs respectively.


Sputter facility NORDIKO 2000 (NORDIKO Ltd.)

Options 4 magnetrons (target diameter 200 mm) 
2 magnetrons operate in the DC-mode 
2 magnetrons operate in the DC- or RF-mode
Power PDC 5 kW; PRF 2 kW 
Process gasses Ar or Ar+7%H2
Process gasses O2, N2
Substrat/target-distance 55...130 mm
Substrate diameter 200 mm
Substrate thickness 25 mm
Currently used targets Al(5N), Al(1.5% Si), poly-Si, SiO2/Ge, Ta(3N) for deposition of Al, SiO2, Si- and Ge-rich SiO2-layers, Ta and Ta2O5
Operating modes Automatical mode, manual mode
Additional equipment - substrate heating (100 < T(°C) < 500 
- substrate cooling (15 °C) 
- LN2 trap
Process monitoring - Residual gas analyzer MPS (FERRAN Scientific) 
- 2 optical emission spectrometers VM 3000 (VERITY Instr.) 
- reactive sputter process controller (MEGATECH)
Wafer load system Single wafer load lock