Publications + Patents

1990

1991

2. L.Bischoff; E.Hesse; D.Janssen; F.K.Naehring; F.Nötzold; G.Schmidt and  J.Teichert
Focused ion beam system with high current density
Microelectronic Engineering 13 (1991) 367 - 370

1992

3.  J. Teichert and D. Janssen
Time of flight corrected beam blanker for ion beam lithography systems
Optik 91 (1992) 46

1993

4. J. Teichert and M.A. Tiunov
Achromatic two?stage ExB mass filter for a focused ion beam column with collimated beam
Meas. Sci. Technol. 4 (1993) 754?763

5. E. Hesse and  F.K. Naehring
Narrow emission from a lithium liquid metal ion source
J. Phys. D: Appl.Phys. 26  (1993)  717 - 719

6. J. Teichert and M.A. Tiunov
Design of an achromatic mass separator for a focused ion beam system
Proc. of the SPIE, Vol. 2014 Charged?Particle Optic  (1993) 85

7. L.Bischoff, E.Hesse, G.Hofmann, F.K.Naehring, W.Probst, B. Schmidt, and J.Teichert
High current FIB system for micromechanics application
Microelectronic Engineering 21 (1993) 197 - 200

1994

8. E. Hesse, F.K. Naehring and J. Teichert
A lithium liquid metal ion source with a narrow angle emission for writing beam lithography
Microelectronic Engineering 23 (1994) 111 - 114

9. E.Hesse, L.Bischoff and J.Teichert
Development of a cobalt liquid alloy ion source
J. Phys. D: Appl. Phys. 27  (1994)  427 - 428

10. J. Teichert, L. Bischoff, E. Hesse, D. Panknin and W. Skorupa
Formation of CoSi2 wires by maskless implantation with the focused ion beam
Mat. Res. Soc. Symp. Proc. 316  (1994) 741- 746  and 320  (1994) 153 - 158

11. L. Bischoff, J.Teichert, E.Hesse, D.Panknin and W.Skorupa
Writing implantation with a high current focused ion beam to form CoSi2 ? microstructures
J. Vac. Sci. Technol. B 12 (1994) 3523 - 3527

12. L. Bischoff, E. Hesse, D. Panknin, W. Skorupa, and J. Teichert
Writing implantation with a high current density focused ion beam
Microelectronic Engineering 23 (1994) 115 - 118

1995

13. L. Bischoff, J. Teichert and E. Hesse
Interconnection lines following the surface topography fabricated by writing focused ion beam   implantation
Microelectronic Engineering 27 (1995) 351 - 354

14. J. Teichert, L. Bischoff,  E.Hesse, P. Schneider, D. Panknin, T. Geßner, B. Löbner, and  N. Zichner,
Comparision of CoSi2 Interconnection Lines on Crystalline and Non-crystalline Silicon Fabricated by
Writing Focused Ion Beam Implantation,
Applied Surfaces Science  91  (1995)  44 - 49

15. E. Hesse, L. Bischoff and  J. Teichert
Angular distribution and energy spread of a lithium liquid metal ion source
J. Phys. D: Applied Physics;  28  (1995)  1707 - 1709

16. L. Bischoff, J. Teichert, E. Hesse, D. Panknin and W. Skorupa,
Ion Beam Synthesis of CoSi2-Microstructures by Means of a High Current Focused Ion Beam
Proc. Int Conf. on Ion Beam Modification of Materials, Canberra, Australia
5 - 10 February 1995, p. 933 - 936

1996

17. L. Bischoff, K.-H. Heinig, J. Teichert and W. Skorupa,
Submicron CoSi2 Structures Fabricated by Focused Ion Implantation and Local Flash Lamp Melting
Nucl Instr. & Methods in Phys. Res. B 112 (1996) 201 - 205

18. L. Bischoff, J. Teichert, E. Hesse, P.D. Prewett and J.G. Watson
Cluster beams from a Co-Nd liquid alloy ion source
Microelectronic Engineering 30 (1996) 245 - 248

19. P. Schneider, L. Bischoff, J. Teichert and E. Hesse
Focused Ion Beam Sputtering Yield Measurements for Cobalt Ions on Silicon and Related Materials
Nucl Instr. & Methods in Phys. Res. B 117 (1996) 77 - 80

20. J. Teichert, L. Bischoff,  E.Hesse, P. Schneider, D. Panknin, T. Geßner, B. Löbner, and  N. Zichner,
Cobalt Disilicide Interconnects for Micromechanical Devices,
Journal of Micromechanics and Microengineering, 6 (1996) 272 - 278

21. W. Driesel, Ch. Dietzsch, E. Hesse, L. Bischoff, and J. Teichert
In situ Observation of the Tip Shape of Co-Ge Liquid Alloy Ion Sources in a High Voltage Transmission  Electron Microscope
J. Vac. Sci. Technol. B 14 (3) (1996) 1621 - 1629

22. E. Hesse, G.L.R. Mair, L. Bischoff  and  J.Teichert
Parametric Investigation of  Current Pulses in a Liquid Metal Ion Emitter
J. Phys. D: Appl. Phys. 29 (8) (1996)  2193 - 2197

23. E. Hesse, W. Driesel, Ch. Dietzsch, L. Bischoff and J. Teichert
Shape of a Co-Nd Liquid Alloy Ion Source
Jpn. J. Appl. Phys. 35 (10) (1996) 5564 - 5570

24. J. Teichert, L. Bischoff and B. Köhler
Evidence for acoustic waves induced by focused ion beams
Appl. Physics Letters, 69 (11) (1996) 1544 - 1546

25. J. Teichert, L. Bischoff and B. Köhler
Investigation of the ion acoustic effect during focused ion beam irradiation
 Nucl Instr. & Methods in Phys. Res. B 120 (1996) 311 - 314

1997

26. B. Schmidt, L. Bischoff, J. Teichert
Writing FIB Implantation and Subsequent Anisotropic Wet Chemical Etching for Fabrication of 3D Structures in Silicon
Sensors and Actuators; A61  (1997)  369-373

27. J. Teichert, L. Bischoff, S. Hausmann
Fabrication of MSM detector structures on silicon by focused ion beam implantation
Microelectronic  Engineering;  35  (1997)  455-458

28. L. Bischoff and J. Teichert
Application of highly focused ion beams
Proc. of Int. Symp. Materials Science Applications of Ion Beam Techniques,
Seeheim, Sept. 9-12, 1996,Trans. Tech. Publications, Materials Science Forum Vol. 248/249 (1997) 445 - 450,  ed. A. G. Balogh and G. Walter

29. L. Bischoff and J. Teichert
Application of highly focused ion beams
Proc. 14th Int. Conf. Application of Accelerators in Research and Industry, AIP Conf. Proc.
Vol. 392, ed. J.L. Duggan and I. L. Morgan, AIP Press, New York 1997, p. 1175 - 1178

30. J. Teichert, L. Bischoff and B. Köhler
Study of the ion-acoustic effect with focused ion beams
Mat. Res. Soc. Symp. Proc. Vol. 438 (1997) 555 - 560

1998

31. S. Hausmann, L.Bischoff, J. Teichert, D. Grambole, F. Hermann, and W. Möller
Investigation of dwell-time effects on the cobalt disilicide formation using focused ion beam implantation
Microelectronic  Engineering, 41/42 (1998) 233 - 236

32. J. Teichert, M. Voelskow, L. Bischoff, and S. Hausmann;
RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation
Vacuum 51 (2) (1998) 261 - 266

33. J. Teichert, L. Bischoff, and S. Hausmann;
Ion beam synthesis of  cobalt disilicide using focused ion beam implantation
J. Vac. Sci. and Technol. B16 (4) (1998) 2574 - 2577

34. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, D. Grambole, F. Herrmann,
and W. Möller
Damage-related dwell-time effects in focused ion beam synthesis of cobalt disilicide
Applied Physics Letters,72 (21) (1998) 2719-2721

35. L. Bischoff and J. Teichert,
Focused Ion Beam Sputtering of Silicon and Related Materials
Report FZD - 217, März 1998

36. T. Ganetsos, D. Tsamakis, D. Panknin, G.L.R. Mair, J. Teichert, L. Bischoff  and C. Aidinis,
Si x-1 Ge x structures fabricated by focused ion beam implantation
Journal de Physique, IV 8 : P3 (1998) 109 - 112

1999

37. L. Bischoff, S. Hausmann,  M. Voelskow and J. Teichert,
Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2
Nucl Instr. & Methods in Phys. Res. B147 (1999) 327 - 331

38. S. Hausmann, L. Bischoff, M. Voelskow, J. Teichert, W. Möller and H. Fuhrmann,
Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements
Nucl Instr. & Methods in Phys. Res. B148 (1- 4) (1999) 610 - 614

39. W. Knapp, L. Bischoff and J. Teichert,
Electron emission characteristics of solidified gold alloy liquid metal ion sources
Applied Surface Science, 146 (1999) 134 - 137

40. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, and W. Möller
Single-Crystalline CoSi2 Layer Formation by Focused Ion Beam Synthesis
Int. Microprocesses and Nanotechnology Conf.,Yokohama, Japan, July 6-8 , 1999
Jap. J. Appl. Phys., Part 1, 38 (12B) (1999) 7148

41. J. Martin, R. Wannemacher, J. Teichert, L. Bischoff, and B. Köhler
Generation and detection of fluorescent color centers in diamond with submicron resolution
Appl. Phys. Lett. 75 (20) (1999) 3096 - 3098

2000

42. L.Bischoff, J.Teichert, S.Hausmann, T. Ganetsos,  and G.L.R. Mair
 Investigation and optimization of the emission parameters of alloy liquid metal ion sources
Int. Conf. on Ion Beam Analysis, IBA-14; Dresden July 26.-30., 1999
Nucl Instr. Meth in Phys. Res. B 161-163 (2000) 1128 – 1131.

43. L.Bischoff, J.Teichert , S.Hausmann , T. Ganetsos  and G.L.R. Mair
 Temperature and energy spread investigations of alloy LMIS
 Int. Conf. on Micro-and Nano Engineering, MNE`99, Rome, Italy, Sept.20-24, 1999
 Microelectronic Engineering, 53 (2000) 613 - 616

44.  J. Teichert, L. Bischoff, S. Hausmann, M. Voelskow and H. Hobert
Micro- Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation
Appl. Phys A 71 (2000) 175 - 180

45. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, and W. Möller
Dwell-time related effects in focused ion beam synthesis of cobalt disilicide
J. Appl. Phys. 87 (1)  (2000) 57 - 62

46. L.Bischoff, J.Teichert, Th.Ganetsos and G.L.R.Mair
Temperature Dependence of the Electric Characteristics of Liquid Metal Alloy Ion Sources
12th Int. Vacuum Microelectronics Conf. IVMC `99, Darmstadt, Juli 6.-9.,1999
J. Vac. Sci. and Technol. B19 (1) (2001)  76 – 78

47. L.Bischoff, Th.Ganetsos, J.Teichert, and G.L.R.Mair
Temperature dependence of emission spectra of liquid metal alloy ion sources
Int. Conf. on Ion Collisions in Solids, ICACS – 18, Odense, Denmark, August 3 – 8, 1999
Nucl.  Instr. Meth. in Phys. Res. B164-165 (2000) 999 - 1003

48.L.Bischoff, Th.Ganetsos, J.Teichert, D. Panknin and G.L.R.Mair
Si 1-x Ge x microstructures produced by maskless ion implantation
Proc. Int. Conf. on Ion Collisions in Solids, ICACS – 18, Odense, Denmark, August 3 – 8, 1999

49. J. Teichert, H. Hobert, L. Bischoff, and S. Hausmann
Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation
Microelectronic Engineering 50 (1-4) (2000) 187 -  192

50. J. Martin, L. Bischoff, J. Teichert, B. Köhler and R. Wannemacher
Point Light Source for Near-Field Optical Microscopy
DPG Tagungen 2000, Potsdam  13.03. – 16.03.00, CP 12.36
Regensburg 27.03. – 31.03.00,  O  11.88

51. L. Bischoff, J. Teichert, Th. Ganetsos, and G.L.R. Mair
Temperature dependence of the electric characteristics of liquid metal alloy ion sources
J. Phys. D: Appl. Phys. 33 (2000) 692 – 695

52. L. Bischoff and J. Teichert
Liquid metal ion source working with an Er70Fe22Ni5Cr3 alloy
J. Phys. D: Appl. Phys. 33 (2000) L69 – L72

53. GLR Mair, Th. Ganetsos, L. Bischoff, and J. Teichert
Doubly-charged ions from liquid metal alloy ion sources: direct field-evaporation or post-ionization ?
J. Phys. D: Appl. Phys. 33 (2000) L86– L89

2001

54. L. Bischoff, J. Teichert, and S. Hausmann
Dose rate dependence of irradiation damage in silicon
E-MRS Spring meeting May 30 – June 2, 2000 Strasbourg, France
Nucl Instr. Meth in Phys. Res. B178 (2001) 165 –169

55. J. Martin, L. Bischoff , and R. Wannemacher
 Microscopy of Ion-Beam Generated Fluorescent Color Center Patterns in LiF
 Opt. Commun. 188 (1-4) (2001) 119 – 128.

56. Ch. Akhmadaliev, L. Bischoff, J. Teichert, and K. Kazbekov
Ion acoustic  microscopy for imaging of buried structures based on a focused ion beam
 Int. Conf. on Micro-and Nano Engineering, MNE`2000, Jena, Germany, Sept.18-21, 2000
 Microelectronic Engineering  57 – 58 (2001) 659 – 664.

57. Th. Ganetsos, C. Aidinis, L. Bischoff, G. L. R. Mair, J. Teichert, D. Panknin and I. Papadopoulos
Liquid metal ion source-produced germanium ions for maskless ion implantation
J. Phys. D: Appl. Phys. 34 (2001) L 11 - L 13.

58. C. J. Aidinis, G. L. R. Mair, L. Bischoff and I. Papadopoulos
A study of the temperature dependence of the energy spread and energy deficit of a  Ge++ ion beam produced by a liquid metal alloy ion source
 J. Phys. D: Appl. Phys. 34 (2001) L 14 -L 16 .

59. Ch. Akhmadaliev, L. Bischoff, J. Teichert, K. Kazbekov, and B. Köhler
Ion Acoustic Microscopy for Imaging of Buried Structures Based on a Focused Ion Beam System
DPG Tagungen 2001, Hamburg 26.03. – 30.03.00,   DS 17.4

60. L.Bischoff, J.Teichert, Th.Ganetsos and G.L.R.Mair
Effect of Temperature on the Electric Emission  Characteristics of Liquid Metal Alloy Ion Sources
J. Vac. Sci. Technol. B19 (1) (2001)  76 – 78.

61.M. Posselt, J. Teichert, L. Bischoff and S. Hausmann
Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation
Nucl Instr. Meth in Phys. Res. B178 (2001) 170 –175.

62. M. Posselt, L. Bischoff and J. Teichert
Influence of dose rate and temperature on ion-beam-induced defect evolution  in Si investigated by channeling implantation at different  doses
Appl. Phys. Lett. 79 (10) (2001) 1444 – 1446.

63. Th. Ganetsos, G. L. R. Mair and L. Bischoff,
On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources
IFES 2001, 47th International  Field Emission Symposium,  July 29 – Aug. 3, 2001, Berlin, Germany

64. Ch. Akhmadaliev, L. Bischoff,  J. Teichert, and K. Kazbekov,
Ion Acoustic Imaging of microstructures using a Focused Ion Beam system
Proc of 3rd  Int. Conf. on Nuclear and  Radiation Physics, 4 – 7 June, 2001, Almaty, Republic of Kazakstan

65. B. Köhler und L. Bischoff,
Entwicklung einer neuen Technologie zur Probenpräparation für die Transmissions-Elektronen-mikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbeitung
Abschlußbericht SMWK Projekt 7/2001 und FZD – Report  FZD-329,  August 2001

66. Th. Ganetsos, G. L. R. Mair, L. Bischoff, J. Teichert and D. Kioussis,
A study of liquid metal alloy ion sources for the production of ions of interest in the microelectronics industry
Solid State Electronics 45 (2001) 1049 – 1054.

67. L. Bischoff
Der fokussierte Ionenstrahl in der Nanotechnologie
DFG-Graduiertenkolleg Sensorik (GK 51)
Technische Universität Dresden, 05.12.2001

68. L. Bischoff  and  J.Teichert
Writing Cobalt FIB Implantation into 6H:SiC
Applied Surface Science  184  (2001) 336 – 339

69. L.Bischoff, J.Teichert and V. Heera
Focused Ion Beam Sputtering Investigations on SiC
Applied Surface Science  184  (2001) 372 – 376

70. L. Bischoff and J. Teichert
Application of focused ion beams in materials research   (invited)
12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
Proceedings VEIT`01, 17-21 September, 2001 Varna, Bulgaria

2002

71. G.L.R. Mair, L. Bischoff, A.W.R. Mair, C.J. Aidinis, Th. Ganetsos, and C.A. Aleiev
An in-depth investigation of the energy distribution of doubly-charged ions emitted from a Liquid Metal Alloy Ion Source
J. Phys. D: Appl. Phys. 35 (2002) L 33 -L 36

72. Ch. Akhmadaliev  and  L. Bischoff
Investigation of elastic wave generation in a solid target by a pulsed ion beam
DPG Tagungen 2002, Regensburg   March, 11 – 15, 2002, O 30.8

73. L. Bischoff (invited)
Application of mass separated focused ion beams
IV Internat. Symposium on Ion Implantation and other Applications of Ions and Electrons,  ION2002
June 10 – 13, 2002, Kazimierz Dolny, Poland

74. GLR Mair, C.J. Aidinis, L. Bischoff, and Th. Ganetsos
 On the dynamics of liquid metal ion sources
 J. Phys. D: Appl. Phys. 35 (2002) 1392  - 1396

75. M. Posselt, L. Bischoff, J. Teichert and A. Ster
Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC studied by channeling implantation
MRS Spring Meeting, Symposium F   Defect- and Impurity-Engineered Semiconductors and Devices III
San Francisco, California , April 1 – 5, 2002, USA

76. A. Travlos, N. Boukos, G. Apostolopoulos, C.J. Aidinis and L. Bischoff
Epitaxial erbium silicide on Ge+ implanted silicon
Nucl.  Instr. Meth. in Phys. Res. B 196 (2002) 174 - 179

77. L. Bischoff
 Focused ion beams from alloy LMIS
 Institut of Solid State Physics and Institute of Electronics
 Sofia 19.04.2002

78. L. Bischoff  (invited)
Alternatuve Flüssigmetall-Ionenquellen
LEO CrossBeam Workshop
IFW Dresden, 14. - 16. 05. 2002

79. L. Bischoff, B. Schmidt, K.-H. Heinig, T. Müller, and S. Hellwig
Plasmonic structures fabricated by focused ion beams
International Workshop on  Nanostructures for Electronics and Optics  - NEOP -
Dresden, Germany, August 18 - 21, 2002

80. G. Gorbunov, A.A. Levin, E. Wieser, L. Bischoff, D. Eckert, A. Mensch, M. Mertig, D.C. Meyer,
H. Reuther, P. Paufler, and W. Pompe
Formation and decomposition of laser-deposited metastable Fe – Cr phases
International  Quantum Electronics Conference and Conference on Lasers Application and Technologies
IQEC/LAT 2002, Moscow, Russia, June 22 – 28, 2002

81. Posselt, M., Bischoff, L., Teichert, J., Ster, A.
Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC
Mat. Res. Soc. Symp. Proc. Vol. 719 (2002) F11.2.1 – F11.2.7

82. C. Akhmadaliev, G.L.R. Mair, , C.J. Aidinis and L. Bischoff
Frequency spectra and eletrohydrodynamic phenomena in a liquid gallium field ion emission source
J. Phys. D: Appl. Phys. 35 (2002) L91 – L93.

83. Akhmadaliev, Ch., Bischoff, L
Analysis of microstructures using the ion-acoustic effect
E-MRS 2002 Spring Meeting, June 18 – 21, 2002 , Strasbourg, France

84. D. Späth, H. Tritschler, L. Bischoff and W. Schulz,
Micromilling – High Potential Technology for  Micromechanical Parts
Proceedings of the 6th  International Conference  on Advanced Manufacturing Systems and Technology, AMST 02,  June 20 – 21, Udine, Italy

85. J. Schmidt, H. Tritschler and L. Bischoff,
Improvement of Micro End Milling Tools through Variation of Tool Manufacturing  Method and Geometry
Proceedings of the International  Conference on Micro and Nano Systems,  ICMNS2002
August 11 – 14, (2002) Kumning, China

86. L. Bischoff, B. Schmidt, K.-H. Heinig, T. Müller, S. Hellwig
Plasmonic Structures Fabricated by Focused Ion Beams
International Workshop on nanostructures for Electronics and Optics –NEOP-
October 6 – 9, (2002) Dresden, Germany

87. L. Bischoff, GLR Mair, C.J. Aidinis, and Th. Ganetsos
Fundamental properties of erbium-ions-producing liquid metal alloy ion sources
Nucl.  Instr. Meth. in Phys. Res. B 197 (2002) 282 - 287

2003

88. L. Bischoff,  J. Teichert, S. Kitova and T. Tsvetkova
Optical pattern formation in a-SiC:H films by Ga+ ion implantation
12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
17-21 September, 2001 Varna, Bulgaria
Vacuum 69 (1-3) (2003) 73 - 77

89. Ch. Akhmadaliev, L. Bischoff,  J. Teichert, and K. Kazbekov
Ion acoustic microscopy based on IMSA-100 focused ion beam system
12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
17-21 September, 2001 Varna, Bulgaria
Vacuum, 69 (1-3) (2003) 431 - 435

90. W. Knapp, L. Bischoff and J. Teichert
Solidified Liquid Metal Ion Source – Formation of a Nanoemitter
12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
17-21 September, 2001 Varna, Bulgaria
Vacuum 69 (1-3) (2003) 345 - 349

91. Th. Ganetsos, GLR Mair and L. Bischoff
On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources
Ultramicroscopy  95  (2003) 171 – 181

92. W. Leitenberger, H. Wendrock,  L. Bischoff, T. Panzer, U. Pietsch, J. Grenzer and A. Pucher
Double pinhole diffraction of white synchrotron radiation
7th International Conference on Surface X-Ray and Neutron Scattering
September 23-27, 2002, Lake Tahoe, California,  USA
Physica B (submitted)

93. Ch. Akhmadaliev, L. Bischoff, GLR. Mair, CJ. Aidinis, Th. Ganetsos and M. Anagnostakis
Temperature dependence of emission frequency spectra of a liquid metal anode
J. Phys. D: Applied Physics 36 (2003) L18 – L20

94. J. Seidel, S. Grafström, L. Eng, and L. Bischoff
Surface plasmon transmission across narrow grooves in thin silver films
Appl. Phys. Lett. (accepted)

95. L. Bischoff, GLR Mair, C.J. Aidinis, and Th. Ganetsos
Erbium ions from a liquid Metal Ion Source for optoelectronic applications
J. Phys. D: Appl. Phys. (submitted)

96. L. Bischoff and B. Schmidt
Low capacitance point diodes fabricated with focused ion beam implantation
Solid State Electronics (accepted, Ref.-Nr. 02-45)

97. M. Posselt, L. Bischoff , J. Teichert and A. Ster
Dose rate and temperature dependence of  ion-beam-induced defect evolution in Si and SiC: Influence on the shape of channeling implantation profiles
J. Appl. Phys. 93 (2) (2003) 1004 - 1013

98. GLR. Mair, Ch. Akhmadaliev, L. Bischoff, Th. Ganetsos, C.J. Aidinis and E.A. Anagnostakis
The effect of electrode geometry on the current fluctuations and emission frequency spectra in a liquid metal ion emitter
J. Phys. D: Appl. Phys. (submitted)

99. L. Bischoff, B. Schmidt, K.-H. Heinig, T. Müller, S. Hellwig
Plasmonic Structures Fabricated by Focused Ion Beams
Vorbereitungstreffen des DFG-Schwerpunktes „Nanodrähte und Nanoröhren“
MPI für Mikrostrukturphysik, Halle 17.01.2003

Patents

J. Teichert and E. Hesse
Flüssigmetallionenquelle zur Emission von Kobaltionenstrahlen
Deutsches Patent DE 4312028 A1 (1994)
Europäisches Patent 94105227.6 (1994)

B. Köhler, L. Bischoff and J. Teichert
Vorrichtung und Verfahren zur gezielten Probenbearbeitung, vorzugsweise von Halbleiterbauelementen, mittels einer Ionen-Feinstrahlanlage
Patentanmeldung 196.06.479.3 (1996)

B. Schmidt, L. Bischoff, L. Eng,
Verfahren zur Herstellung von integrierten Abtastnadeln
Patent: DE 100 57 656 C1 (2000)
Patent: EP 1 209 689 A2

T. Tsvetkova, L. Bischoff, J. Teichert,
Schichtmaterial für optische Informationsträger und Lichtmasken sowie Verfahren zur Herstellung des Schichtmaterials
Patentanmeldung  AZ 101 43 616.5 06.09 (2001)