Speeding through nanowire: Nanowires under tension create the basis for ultrafast transistors
Title | Speeding through nanowire: Nanowires under tension create the basis for ultrafast transistors |
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Description | Terahertz spectroscopy measurements showed that the strained core of semiconductor nanowires can host fast moving electrons, a concept that could be employed for a new generation of nano-transistors. |
Copyright | HZDR/Juniks |
Picture Id | 65273 |
Date | 07.02.2022 |
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