Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

"Online First" included
Without submitted and only approved publications
Only approved publications

32337 Publications
Preparation of CNx films by ion beam assisted filtered cathodic arc deposition
Spaeth, M.; Kühn, M.; Kreißig, U.; Richter, F.;
  • Diamond and Rel. Mat. 6 (1997) 626

Publ.-Id: 2351 - Permalink


Fernüberwachung ukrainischer Kernkraftwerke (in Russisch)
in Russian
Beyer, M.; Carl, H.; Schumann, P.; Seidel, A.;
Die zu Beginn der neunziger Jahre in der Ukraine praktizierte Überwachung der Kernkraftwerke ermöglichte der Genehmigungs- und Aufsichtsbehörde nur einen unzureichenden Zugang zu Informationen über den jeweils aktuellen betrieblichen Sicherheitszustand.
Deshalb wurde für den 5. Block des KKW Saporoshje (WWER-1000/W-320) ein modernes betriebliches Überwachungssystem als Pilotprojekt konzipiert, eingerichtet und Ende 1995 in den Probebetrieb überführt. Es ergänzt die vorhandenen betrieblichen Kontroll- und Überwachungseinrichtungen durch Einbeziehung moderner informationstechnischer Mittel. Das System ermöglicht schwerpunktmäßig eine kontinuierliche Beobachtung des Zustandes vom Block 5 bei Normalbetrieb und bei Betriebsstörungen bzw. Störfällen, so daß bei erkennbaren Abweichungen vom bestimmungsgemäßen Anlagenbetrieb frühzeitig durch Nachfrage und Anordnung darauf reagiert werden kann.
Ein ähnliches Überwachungssystem konnte 1998 für den ersten und zweiten Block des KKW Rovno (WWER-440/W-213) eingerichtet und an das Informations- und Krisenzentrum in Kiew angeschlossen werden.

Keywords: ukrainische Kernkraftwerke, KKW, Fernüberwachung
  • Atomnaja Technika sa rubeshom, Nr.8 (1999), page 3-8

Publ.-Id: 2350 - Permalink


Proton irradiation effects in silicon junction diodes and charge-coupled devices
Simoen, E.; Vanhellemont, J.; Alaerts, A.; Claeys, C.; Gaubas, E.; Kaniava, A.; Ohyama, H.; Sunaga, H.; Nashiyama, I.; Skorupa, W.;
  • Radiation Phys.Chem. 50 (1997) 417

Publ.-Id: 2349 - Permalink


Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch stop properties
Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Calvo-Barrio, L.; Morante, J. R.; Esteve, J.; Acero, M. C.; Skorupa, W.; Kögler, R.;
  • J. Electrochem. Soc. 144 (1997) 2211

Publ.-Id: 2348 - Permalink


Growth of buried oxide layers of SOI-structures by thermal oxidation of the top silicon layer
Schroer, E.; Hopfe, S.; Tong, Q.-Y.; Gösele, U.; Skorupa, W.;
  • J. Electrochem. Soc. 144 (1997) 2205

Publ.-Id: 2347 - Permalink


SANS investigation of plasma-sprayed materials using double-crystal diffractometer
ŠAroun, J.; Eichhorn, F.; Hempel, A.; Lukas, P.; Kolman, B.; Neufuss, K.; Mikula, P.; Strunz, P.;
  • Physica B234-236 (1997) 1011

Publ.-Id: 2346 - Permalink


Astatine-211 production at the Rossendorf cyclotron
Guratzsch, H.;
The production of Astatine-211 with the 120 cm Rossendorf cyclotron U-120 has been going on for two decades. Natural Bismuth evaporated on an Aluminium backing, a specially constructed water cooled target-block, is irradiated by 28 MeV Alpha-particles: 209Bi(Alpha, 2n)211At. For safety reasons the beam current is limited to 10 µA. The irradiated target is transported to the user who extracts the Astatine by himself. He also prepares the target with Bismuth for the next irradiation.
Keywords: Isotope production, Astatine-211, cyclotron, target construction
  • Lecture (Conference)
    Meeting on 211-At in anti-cancer therapy, Ispra, June 7th / 8th, 1999

Publ.-Id: 2345 - Permalink


Shears Mechanism in the A ~ 110 Region
Clark, R. M.; Asztalos, S. J.; Busse, B.; Chiara, C. J.; Cromaz, M.; Deleplanque, M. A.; Diamond, R. M.; Fallon, P.; Fossan, D. B.; Jenkins, D. G.; Juutinen, S.; Kelsall, N.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Macleod, R. W.; Schmid, G.; Sears, J. M.; Smith, J. F.; Stephens, F. S.; Vetter, K.; Wadsworth, R.; Frauendorf, S.;
  • Physical Review Letters, Volume 82, Number 16, 19 April 1999, 3220-3223

Publ.-Id: 2344 - Permalink


TEM characterization of carbon ion implantation into epitaxial Si1-xGex
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; Calvo-Barrio, L.; Bachrouri, A.; Gonzalez-Varona, O.; Morante, J. R.; Kögler, R.; Skorupa, W.;
  • Contribution to external collection
    Inst. Phys. Conf. Ser. 157 (1997) 419
  • Lecture (Conference)
    Int. Conf. on Microscopy of Semiconducting Materials, Oxford, England, April 1997

Publ.-Id: 2343 - Permalink


Härten von Edelstahl durch Stickstoff-Plasma-Immersions-Ionenimplantation
Richter, E.; Günzel, R.;
  • Ingenieur-Werkstoffe 6 (1997) 44

Publ.-Id: 2342 - Permalink


Rotational alignment near N=Z and proton-neutron correlations
Frauendorf, S.; Sheikh, J. A.;
  • Physical Review C, Volume 59, Number 3, March 1999, 1400-1404

Publ.-Id: 2341 - Permalink


Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behaviour of nitrogen implanted $-SiC films
Reichert, W.; Lossy, R.; Gonzalez Sirgo, M.; Obermeier, E.; Skorupa, W.;
  • Diam. Relat. Mater. 6 (1997) 1445

Publ.-Id: 2340 - Permalink


Gas-sensor properties of SnO2 films implanted with gold and iron ions
Nomura, N.; Shiozawa, H.; Takada, T.; Reuther, H.; Richter, E.;
  • J. Mat. Sci.: Materials in Electronics 8 (1997) 301

Publ.-Id: 2339 - Permalink


Fluorine profiles in achondrites and chondrites from antarctica by nuclear reaction analysis (NRA)
Noll, K.; Döbeli, M.; Tobler, L.; Grambole, D.; Krähenbühl, U.;
  • Meteorites and Planet Sci. 32 (1997) A101

Downloads:

Publ.-Id: 2338 - Permalink


Electrical resistivity and positron lifetime studies of the Cu-Mn system
Nicht, E.-M.; Brauer, G.; Vostry, P.; Cieslar, M.; Blazek, P.;
  • Nukleonika 42 (1997) 175

Publ.-Id: 2337 - Permalink


Positron annihilation spectroscopy, electrical resistivity, and microstructural transmission electron microscopy studies of the CuMn system
Nicht, E.-M.; Brauer, G.; Cieslar, M.; Vostry, P.;
  • Mat. Sci. Forum 255-257 (1997) 572

Publ.-Id: 2336 - Permalink


Layered artefacts: Non-destructive characterization by PIXE and RBS
Neelmeijer, C.; Mäder, M.; Wagner, W.; Schramm, H.-P.;
To identify paint layer arrangements and their elemental composition without sampling, the ion beam techniques PIXE/RBS are successfully applied on air.
Keywords: PIXE, RBS, proton beam on air, non-destructive analysis, paint layers
  • Optical Technologies in the Humanities, OWLS IV, ed. by D. Dirksen, G. von Bally, Springer, (1997) 105

Publ.-Id: 2335 - Permalink


Experimental determination of positron related surface characteristics of 6H-SiC
Nangia, A.; Kim, J. H.; Weiß, A. H.; Brauer, G.;
  • Mat. Sci. Forum 255-257 (1997) 711
  • Lecture (others)
    American Physical Society Meeting, Kansas City, USA, March 1997
  • Lecture (Conference)
    11th Int. Conf. on Positron Annihilation (ICPA-11), Kansas City, USA, May 25-30,1997
  • Lecture (Conference)
    American Vacuum Society - Texas Chapter (Symp. on Electronic Materials, Processing and Characteri-zation), Austin, TX, USA, June 3 - 4, 1997

Publ.-Id: 2334 - Permalink


Plasma-Immersions-Ionenimplantation für große Oberflächen
Möller, W.; Günzel, R.; Mändl, S.; Richter, E.;
  • JOT 37 (1997) II-IV

Publ.-Id: 2333 - Permalink


Sensitization of silicon nitride surfaces for Ag+ ions by ion implantation
Möller, D.; Pham, M. T.; Hüller, J.;
  • Sensors and Actuators B43 (1997) 110

Publ.-Id: 2332 - Permalink


X-ray diffraction investigations of NdGaO3 single crystals
Mazur, K.; Sass, J.; Giersz, W.; Schell, N.;
  • Acta Physica Polonica A92 (1997) 226

Publ.-Id: 2331 - Permalink


Defects in detwinned LaGaO3 substrates
Mazur, K.; Fink-Finowicki, J.; Berkowski, M.; Schell, N.;
  • Acta Physica Polonica A92 (1997) 205

Publ.-Id: 2330 - Permalink


Doping of 3C-SiC by implantation of nitrogen at high temperatures
Lossy, R.; Reichert, W.; Obermeier, E.; Skorupa, W.;
  • J. Electronic Materials 26 (1997) 123

Publ.-Id: 2329 - Permalink


Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy
Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.;
  • Appl. Phys. Lett. 70 (1997) 2696

Publ.-Id: 2328 - Permalink


Application of the ECR slot antenna plasma source for ion implantation
Korzec, D.; Raiko, V.; Engemann, J.; Günzel, R.; Brutscher, J.; Möller, W.;
  • Surf. Coat. Technol. 93 (1997) 217

Publ.-Id: 2327 - Permalink


Metal gettering by defective regions in carbon-implanted silicon
Kögler, R.; Kaschny, J. R.; Yankov, R. A.; Werner, P.; Danilin, A. B.; Skorupa, W.;
  • Solid State Phenomena 57/58 (1997) 63

Publ.-Id: 2326 - Permalink


Observation of a (nü7/2-[514])2 crossing 180Os
Lieder, R. M.; Venkova, T.; Utzelmann, S.; Gast, W.; Schnare, H.; Spohr, K.; Hoernes, P.; Georgiev, A.; Bazzacco, D.; Menegazzo, R.; Rossi-Alvarez, C.; de Angelis, G.; Kaczarowski, R.; Rzaca-Urban, T.; Morek, T.; Marti, G. V.; Maier, K. H.; Frauendorf, S.;
  • Nuclear Physics A 645 (1999) 465-491

Publ.-Id: 2325 - Permalink


Amorphization and crystallization effects in high-dose zinc-implanted silicon
Kalitzova, M.; Simov, S.; Yankov, R. A.; Angelov, C.; Vitali, G.; Rossi, M.; Pizzuto, C.; Zollo, G.; Fauré, J.; Killian, K.; Bonhomme, P.; Voelskow, M.;
  • J. Appl. Phys. 81 (1997) 1143

Publ.-Id: 2323 - Permalink


Annealing effects in light emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating
Kachurin, G. A.; Zhuravlev, K. S.; Pazdnikov, N. A.; Leyer, A. F.; Tyschenko, I. E.; Volodin, V. A.; Skorupa, W.; Yankov, R. A.;
  • Nucl. Instr. Meth. B127/128 (1997) 583

Publ.-Id: 2322 - Permalink


Visible and near-infrared luminescence from Si nanostructures formed by ion implantation and pulse annealing
Kachurin, G. A.; Tyschenko, I. E.; Zhuravlev, K. S.; Pazdnikov, N. A.; Volodin, V. A.; Gutakovsky, A. K.; Leier, A. F.; Skorupa, W.; Yankov, R. A.;
  • Nucl. Instr. Meth. B122 (1997) 571

Publ.-Id: 2321 - Permalink


Crystal-GRID investigations of atomic collision cascades in ionic compounds
Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Doll, C.;
  • Mat. Sci. Forum 248-249 (1997) 49

Publ.-Id: 2320 - Permalink


Void formation in Ge induced by high energy heavy ion irradiation
Huber, H.; Assmann, W.; Karamian, S. A.; Mücklich, A.; Prusseit, W.; Gazis, E.; Grötzschel, R.; Kokkoris, M.; Kossionidis, E.; Mieskes, H. D.; Vlastou, R.;
  • Nucl. Instr. Meth. B122 (1997) 542

Publ.-Id: 2319 - Permalink


Void formation and surface rippling in Ge induced by high energetic Au irradiation
Huber, H.; Assmann, W.; Grötzschel, R.; Mieskes, H. D.; Mücklich, A.; Nolte, H.; Prusseit, W.;
  • Mat. Sci. Forum 248/249 (1997) 301

Publ.-Id: 2318 - Permalink


Pressure/composition isotherms of proton conducting SrYb0.05Zr0.95O2.975/H2O by means of nuclear resonance reaction analysis
Hempelmann, R.; Eschenbaum, J.; Altmayer, M.; Groß, B.; Grambole, D.; Herrmann, F.; Nagengast, D.; Krauser, J.; Weidinger, A.;
Films of SrYb0.05Zr0.095O2.975 were prepared by sol-gel processing. Water vapour pressure/hydrogen composition isotherms were recorded ex-situ comprising
pressures between 0 and 84.5 kPa and temperatures between 873 and 1073 K. Nuclear Resonance Reaction Analysis (NRRA) was used to determine the
hydrogen concentration and, in addition, depth profiles of hydrogen concentration. The chemical potential of interstitial hydrogen in oxides could be determined; from
its temperature dependence thermodynamical constants were calculated. We observe two hydrogen fractions with a site energy difference of 20 kJ/mol. A size effect
of the thermodynamic properties is observed below a thickness of 350 nm: nanofilms exhibit higher solubility than bulk material.
Keywords: absorption, materials properties, thermodynamics, solid proton conductor
  • Ber. Bunsenges. Phys. Chemie 101 (1997) 985 No. 7

Publ.-Id: 2317 - Permalink


Range and damage distribution in ultra low energy boron ion implantation
Hatzopoulos, N.; Suder, S.; van den Berg, J. A.; Donelly, S. E.; Armour, D. G.; Panknin, D.; Fukarek, W.; Frey, L.; Foad, M. A.; Moffat, S.; Bailey, P.; Naakes, C. T. Q.;
  • Contribution to external collection
    Proc. 11th Int. Conf. Ion Implantation Technology; The Institute of Electrical and Electronics Engineers, Piscataway, USA, 1997, p. 527

Publ.-Id: 2316 - Permalink


Formation and characterisation of Si/SiO2 multilayer structures by oxygen implantation into silicon
Hatzopoulos, N.; Siapkas, D. I.; Hemment, P. L. F.; Skorupa, W.;
  • J. Appl. Phys. 80 (1996) 4960

Publ.-Id: 2315 - Permalink


On the presence of molecular nitrogen in nitrogen-implanted amorphous carbon
Grigull, S.; Jacob, W.; Henke, D.; Mücklich, A.; Späth, C.; Sümmchen, L.;
  • Appl. Phys. Lett. 70 (1997) 1387

Publ.-Id: 2314 - Permalink


Overpressurized bubbles versus voids in helium implanted and annealed silicon
Fichtner, P. F. P.; Kaschny, J. R.; Yankov, R. A.; Mücklich, A.; Kreißig, U.; Skorupa, W.;
  • Appl.Phys.Lett. 70 (1997) 732

Publ.-Id: 2312 - Permalink


Long term instabilities in the defect assembly in irradiated high resistivity silicon detectors
Eremin, V.; Ivanov, A.; Verbitskaya, E.; Li, Z.; Schmidt, B.;
  • IEEE Trans. Nucl. Sci. 44 (1997) 819

Publ.-Id: 2311 - Permalink


Effects of pulse-irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam
Dvurechenskii, A. V.; Zinovyev, A.; Makarov, V. V.; Grötzschel, R.; Heinig, K.-H.;
  • JETP Letter 64 (1996) 242

Publ.-Id: 2310 - Permalink


Wear improvement of silicate glass surfaces by ion implantation
Deshkovskaya, A. A.; Richter, E.;
  • Surf. Coat. Technol. 93 (1997) 150

Publ.-Id: 2309 - Permalink


Modifizierung von Polymeroberflächen durch Ionenimplantation
Chudoba, T.; Zschiesche, R.; Uhlmann, K.;
  • JOT 37 (1997) VI-VIII

Publ.-Id: 2308 - Permalink


Experimental determination of positronic and electronic characteristics of 3C-SiC
Brauer, G.; Anwand, W.; Nicht, E.-M.; Coleman, P. G.; Wagner, N.; Wirth, H.; Skorupa, W.;
  • Appl. Surf. Sci. 116 (1997) 19

Publ.-Id: 2306 - Permalink


Positron mobility in semi-insulating 4H-SiC
Beling, C. D.; Fung, S.; Cheung, S. H.; Gong, M.; Ling, C. C.; Hu, Y. F.; Brauer, G.;
  • Mat. Sci. Forum 255-257 (1997) 260

Publ.-Id: 2304 - Permalink


An EPR study of defects induced in 6H-SiC by ion implantation
Barklie, R. C.; Collins, M.; Holm, B.; Pacaud, Y.; Skorupa, W.;
  • J. Electronic Materials 26 (1997) 137

Publ.-Id: 2303 - Permalink


Heavy-Ion induced effects in Ge crystal damage at the 100 MeV energy range
Assmann, W.; Huber, H.; Mieskes, H. D.; Nolte, H.; Gazis, E.; Kokkoris, M.; Kossionides, S.; Vlastou, R.; Grötzschel, R.; Mücklich, A.; Prusseit, W.; Karamian, S. A.;
  • Nucl. Instr. Meth. B 122 (1997) 250

Publ.-Id: 2302 - Permalink


Investigations of the transition region between Si and thermally grown SiO2 layers
Anwand, W.; Brauer, G.; Coleman, P. G.; Goodyear, A.; Reuther, H.; Maser, K.;
  • J. Phys.: Condens. Matter 9 (1997) 2947

Publ.-Id: 2301 - Permalink


Nanostructured arrays formed by finely focused ion beams
Zuhr, R. A.; Budai, J. D.; Datskos, P. G.; Meldrum, A.; Thomas, K. A.; Warmack, R. J.; White, C. W.; Feldman, L. C.; Strobel, M.; Heinig, K.-H.;
  • Lecture (Conference)
    MRS Fall Meeting, Boston, USA, Nov. 30 - Dec. 4, 1998

Publ.-Id: 2300 - Permalink


Stabilisation of the 3C-SiC/SOI system by an intermediate Si3N4 layer
Zappe, S.; Obermeier, E.; Stoemenos, J.; Möller, H.; Krötz, G.; Wirth, H.; Skorupa, W.;
  • Lecture (Conference)
    ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998

Publ.-Id: 2299 - Permalink


Ion-implantation induced damage In 6H-SiC: the influence of substrate temperature
Wirth, H.; Anwand, W.; Mücklich, A.; Panknin, D.; Voelskow, M.; Brauer, G.; Skorupa, W.; Gonzalez-Varona, O.; Perez-Rodriguez, A.;
  • Lecture (Conference)
    40th Electronic Materials Conference (EMC'98), Charlottesville, Virginia, USA, June 24-26, 1998

Publ.-Id: 2298 - Permalink


Similarity of energetic depositions of cubic boron nitride and titanium nitride thin films
Wang, X.; Kolitsch, A.; Zhao, J. P.; Möller, W.;
  • Lecture (Conference)
    MRS Fall Meeting 1998, Boston, USA, Nov. 30 - Dec.4, 1998

Publ.-Id: 2297 - Permalink


Study of Interatomic Potentials in ZnS - Crystal-GRID Experiments versus ab initio Calculations
Koch, T.; Heinig, K.-H.; Jentschel, M.; Börner, H. G.;
Crystal-GRID measurements have been performed with ZnS single crystals. For the first time, an asymmetric Crystal-GRID line shape could be observed. The preliminary data evaluation indicates that the reported lifetime of the 3221 keV level in 33 is too short. A value of about 60 fs has been found. Due to this ``long'' lifetime the line shape is much less structured than calculated with the reported lifetime.
Keywords: atomic collisions; Crystal-GRID; gamma ray spectroscopy; interatomic potentials; Molecular Dynamics simulations; nuclear lifetimes; ZnS
  • Lecture (Conference)
    Applications of high-precision gamma-spectroscopy, Notre Dame, USA, July 1-3, 1998
  • J. Res. Natl. Inst. Stand. Technol. 105 (2000) 81-87

Publ.-Id: 2296 - Permalink


Tiefenselektive Phasenanalyse Si-ionenimplantierter "-Fe-Oberflächen mittels DCEMS
Walterfang, M.; Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.;
  • Lecture (Conference)
    DPG-Frühjahrstagung, Regensburg, March 23-27,1998

Publ.-Id: 2295 - Permalink


Potential investigation for ZnS using Crystal-GRID high-precision gamma spectroscopy and MD computer simulations
Hauschild, T.; Heinig, K.-H.; Jentschel, M.; Börner, H. G.;
Crystal-GRID is a new and complementary method for studying interatomic potentials in crystals at intermediate energies between 1 eV and 1 keV. After a neutron capture reaction a first photon emission leads to a recoil of the still excited nucleus. While moving through the crystal a second photon is emitted. When observing many recoil events a structured and Doppler broadened gamma line shape is obtained due to the anisotropic slowing down in the crystal. Experimental findings from the high-precision gamma spectrometers GAMS 4 and GAMS 5 at the ILL are compared to predictions from molecular dynamics (MD) simulations. Thereby information about the interatomic potential can be obtained. Results will be presented for ZnS single crystals, showing that the universal screened Coulomb potentials (ZBL, KrC) are not appropriate in the examined energy region. A new potential for that region will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS
  • Lecture (Conference)
    DPG Frühjahrstagung, Münster, Germany, March 22-26, 1999

Publ.-Id: 2294 - Permalink


Electron energy-loss spectroscopy in transmission of undoped and doped diamond films
Waidmann, S.; Bartsch, K.; Endler, I.; Fontaine, F.; Arnold, B.; Knupfer, M.; Leonhardt, A.; Fink, J.;
  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Publ.-Id: 2293 - Permalink


Surface modification of AISI M2 steel by nitrogen plasma immersion ion implantation
Uglov, V. V.; Rusalsky, D. P.; Kholmetskii, A. L.; Khodasevich, V. V.; Ruebenbauer, K.; Günzel, R.; Richter, E.; Wilbur, P.; Wei, R.;
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Publ.-Id: 2292 - Permalink


Effect of hydrostatic pressure annealing on visible photoluminescence from Si+- and Ge+-implanted SiO2 films
Tyschenko, I. E.; Kachurin, G. A.; Zhuravlev, K. S.; Rebohle, L.; Skorupa, W.;
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Publ.-Id: 2291 - Permalink


Room temperature visible photoluminescence from Ar+- and Ge+-implanted Si3N4- and SiOxNy-films
Tyschenko, I. E.; Kachurin, G. A.; Rebohle, L.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Publ.-Id: 2290 - Permalink


Ion Beam Mixing of the ZrO2/Fe System
Turos, A.; Gawlik, D.; Jagielski, J.; Stonert, A.; Matz, W.; Grötzschel, R.;
  • Lecture (Conference)
    11Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31 - Sept. 4, 1998

Publ.-Id: 2289 - Permalink


Thermal wave analysis: a tool for non-invasive testing ion beam synthesis of wide band gap materials
Teichert, G.; Schleicher, L.; Knedlik, C.; Voelskow, M.; Skorupa, W.; Yankov, R. A.; Pezoldt, J.;
  • Lecture (Conference)
    MRS Fall Meeting., Boston, USA, Nov. 30 - Dec. 4, 1998

Publ.-Id: 2288 - Permalink


Computer simulation studies of the competition between nucleation and ion mixing in ion beam synthesis of nanoclusters
Strobel, M.; Heinig, K.-H.; Möller, W.;
  • Lecture (Conference)
    4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan, Sept. 15-19, 1998

Publ.-Id: 2287 - Permalink


In vitro Charakterisierung modifizierter ionenimplantierter Titanoberflächen
Stölzel, M.; Born, R.; Scharnweber, D.; Worch, H.; Pham, M. T.; Wieser, E.;
  • Lecture (Conference)
    Werkstoffwoche, München, Germany, Oct. 12-15, 1998

Publ.-Id: 2286 - Permalink


The behaviour of hydrogen in titanium after ion implantation
Soltani-Farshi, M.; Baumann, H.; Richter, E.; Kreißig, U.; Bethge, K.;
  • Lecture (Conference)
    CAARI´98, Denton, USA, December 1998

Publ.-Id: 2285 - Permalink


Positron studies of defects in nitrogen and carbon implanted titanium
Soltani-Farshi, M.; Baumann, H.; Anwand, W.; Brauer, G.; Coleman, P. G.; Richter, E.; Kreißig, U.; Bethge, K.;
  • Lecture (Conference)
    1998 Spring Meeting, San Francisco/CA, April 13-17, 1998

Publ.-Id: 2284 - Permalink


Wave-ordered nanostructures formed on silicon-on-insulator wafers by means of reactive ion beams
Smirnov, V. K.; Kibalov, D. S.; Krivlevich, S. A.; Lepshin, P. A.; Potapov, E. V.; Ynakov, R. A.; Skorupa, W.; Danilin, A. B.; Makarov, V. V.;
  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Publ.-Id: 2283 - Permalink


Crystal-GRID: Current status and prospects for experimental studies of atomic collisions in solids.
Jentschel, M.; Hauschild, T.; Börner, H. G.; Heinig, K.-H.;
The Doppler effect of electromagnetic radiation represents a very direct indicator to study the motion of emitting particles. In the Crystal-GRID technique one uses the ultra high resolution power of the crystal spectrometers GAMS4 and GAMS5 to measure the Doppler broadening of $\gamma$ radiation emitted from excited nuclei. Thus it represents a new nuclear probe for the direct study of atomic motion in solids at kinetic energies of several hundreds of eV.

A detailed description of the experimental technique will be given together with an overview on already performed experiments using massive single crystals
of TiO2, NaCl, Ni and Cr. In these experiments the comparison of experimental data to predictions deduced from Molecular Dynamics simulations has allowed to obtain new repulsive interatomic potentials.

The currently used double flat crystal geometry of the spectrometers has allowed to use only massive targets. Recent technical improvements of the GAMS5 spectrometer towards a double bent crystal geometry
will allow to extend the technique to studies of crystalline layers as they may result from ion implantation. The current status of the spectrometer and the expected capabilities will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; TiO2, NaCl, Ni, Cr
  • Poster
    ICACS-18, Odense, Denmark, August 3-8, 1999

Publ.-Id: 2281 - Permalink


Study of Interatomic Potentials in ZnS using Crystal-GRID high-precision gamma spectroscopy and MD simulations
Hauschild, T.; Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Möller, W.;
Crystal-GRID measurements have been performed with ZnS single crystals. A new Crystal-GRID potential could be determined by splining a Stillinger-Weber like equilibrium potential to screened Coulomb potentials. The new potential is fitted to experimental data containing information about the energy range of about 10 to 500 eV and differs significantly from the screened Coulomb potentials. The nuclear level life time of the 3221 keV level in 33S has been determined to be (48.8 +/- 0.7) fs. Furthermore the predicted asymmetry of a Crystal-GRID line shape could be observed for the first time.
Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS
  • Lecture (Conference)
    ICACS-18, Odense, Denmark, August 3-8, 1999

Publ.-Id: 2280 - Permalink


Ion beam processing for silicon-based light emission
Skorupa, W.;
  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Publ.-Id: 2279 - Permalink


Beta-SiC on SiO2 formed by ion implantation and bonding for micromechanical applications
Serre, C.; Romano-Rodriguez, A.; Perez-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Kögler, R.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Publ.-Id: 2278 - Permalink


Bonding and etch-back of ion beam synthesized beta-SiC for SiCOI formation
Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Esteve, J.; Kögler, R.; Skorupa, W.;
  • Lecture (Conference)
    NATO Advanced Workshop "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", Kiev, Ukraine, Oct. 1998

Publ.-Id: 2277 - Permalink


Characterisation of Al-implanted LiF by a monoenergetic positron beam
Sendezera, E. J.; Davidson, A. T.; Fischer, C. G.; Connell, S. H.; Sellschop, J. P. F.; Anwand, W.; Brauer, G.; Nicht, E.-M.;
  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998

Publ.-Id: 2276 - Permalink


Non-destructive analysis of elements with low atomic numbers (Na – K) in artifacts using X-ray fluorescence analysis
Schreiner, M.; Mantler, M.; Neelmeijer, C.; Mäder, M.;
  • Lecture (Conference)
    31th Int. Symp. on Archaeometry, Budapest, Hungary, April 27 - May 1, 1998

Publ.-Id: 2275 - Permalink


Temperaturverhalten von durch Hochdosisimplantation hergestellten Al-Fe-Legierungen
Reuther, H.;
  • Lecture (Conference)
    IX. Mößbauerkolloquium, Freiberg, Sept. 28-30, 1998

Publ.-Id: 2274 - Permalink


Charakterisierung von durch Ionenimplantation hergestellten Fe-Al-Schichten mittels Augerelektronen- und Mößbauerspektroskopie
Reuther, H.;
  • Lecture (Conference)
    10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998

Publ.-Id: 2273 - Permalink


Strong blue electroluminescence from Ge-rich silicondioxide-on-silicon formed by ion beam synthesis
Rebohle, L.; von Borany, J.; Tyschenko, I. E.; Skorupa, W.;
  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Publ.-Id: 2272 - Permalink


Is there still any hope for blue luminescence from silicon?
Rebohle, L.; von Borany, J.; Markwitz, A.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Publ.-Id: 2271 - Permalink


The Installations for Materials Research on ROBL at the ESRF
Prokert, F.; Betzl, M.; Eichhorn, F.; Matz, W.; Schell, N.;
  • Lecture (Conference)
    Jahrestagung DGK, Karlsruhe, März 1998

Publ.-Id: 2270 - Permalink


Microscopic processes of damage production during ion implantation studied by combining time-ordered BCA with MD simulations
Posselt, M.;
  • Lecture (Conference)
    MRS Spring Meeting, San Francisco, CA, USA, April 13-17, 1998

Publ.-Id: 2269 - Permalink


Pulsed plasma beam mixing of Ti and Mo on Al2O3 substrates
Piekoszewski, J.; Wieser, E.; Grötzschel, R.; Reuther, H.; Werner, Z.; Langner, A.;
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Publ.-Id: 2268 - Permalink


Formation of surface Pd-Ti alloys using pulsed plasma beams
Piekoszewski, J.; Werner, Z.; Wieser, E.; Langner, J.; Grötzschel, R.; Reuther, H.; Jagielski, J.;
  • Lecture (Conference)
    ION'98, Kazimierz Dolny, Poland, June 16-19, 1998

Publ.-Id: 2267 - Permalink


Structural and compositional characterisation of N+ and Al+ co-implanted 6H-SiC using optical methods
Pezoldt, J.; Yankov, R. A.; Fukarek, W.; Mücklich, A.; Fontaine, F.; Skorupa, W.; Werninghaus, T.; Zahn, D.;
  • Lecture (Conference)
    9th Europ. Conf. on Diamond, Diamond-like Materials, Nitrides, and Silicon Carbide, Crete, Greece, Sept. 13-18, 1998

Publ.-Id: 2266 - Permalink


A novel (SiC)1-x(AIN)x compound synthesized using ion beams
Pezoldt, J.; Yankov, R. A.; Mücklich, A.; Fukarek, W.; Reuther, H.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Publ.-Id: 2265 - Permalink


Nitriding of stainless steel by low energy ion implantation - the nitriding kinetics
Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.;
Stainless steels are known for their excellent corrosion resistance based on a native surface oxide layer and a moderate hardness leading to short life times in applications with intensive wear. Hence, surface hardening could greatly enlarge their range of applications. However, stainless steels are considered as difficult candidates for surface hardening. Nitriding by low-energy ion implantation is a promising technique. At target temperatures of about 400°C the formation of a highly nitrogen enriched layer has been observed. This layer exhibits an increased surface hardness and a reduced wear without adversely affecting the excellent corrosion resistance.
This work focuses on the nitriding kinetics which are not well understood. Experimental data has been obtained by time and depth resolved elemental analyses using elastic recoil detection (ERD) during the nitriding process. The ERD technique has been optimised for time resolved in-situ data acquisition. Fast nitrogen diffusion, an energy and current density dependence of the thickness of the nitrogen enriched layer and an influence of the surface oxide layer have been observed. The physical origin of these phenomena will be revealed and a simple model of the nitriding process taking into account the governing physical processes, i. e. sputtering, recovering of the surface from the residual gas and diffusion in the solid, will be presented.
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Publ.-Id: 2264 - Permalink


Nitrogen transport during plasma ion nitriding of austenitic stainless steel - the role of the native surface oxide layer
Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.;
Austenitic stainless steels are widely used due to their advantageous combination of properties as ductility, strength and excellent corrosion resistance. However, due to their moderate hardness they are not suited for abrasively stressed parts. Hence, the market potential of austenitic stainless steels could be greatly enhanced by a process that allows surface hardening without negatively affecting the other properties. Standard techniques as heat treatment, carburizing and conventional nitriding fail. Recently it has been shown that ion nitriding at moderate temperature is a promising candidate for surface hardening austenitic stainless steels. Surface hardness increased by factors of 4 to 5 leading to wear resistance increases by more than two orders of magnitude have been achieved without compromising the excellent corrosion resistance. It has been reported that the nitriding velocity depends on the ion energy and on the current density and that the passivating surface oxide layer of the austenitic stainless steels may play an important role. In a systematic study the influence of the surface oxide layer on the nitriding efficiency of ion nitriding austenitic stainless steel at moderate temperatures is analyzed by determining the retained nitrogen dose for fixed process times and temperatures but different oxygen partial pressures, ion current densities and ion energies. Additionally, for some selected process parameters during processing, the composition of the near surface region (down to 150nm) regarding the nitrogen, the carbon and the oxygen content is obtained by an in situ experiment.
  • Lecture (Conference)
    Int. Conf. on Metallurgical Coatings and Thin Films, San Diego, April 27 - May 1, 1998

Publ.-Id: 2263 - Permalink


Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC
Panknin, D.; Wirth, H.; Mücklich, A.; Skorupa, W.;
  • Lecture (Conference)
    ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998

Publ.-Id: 2262 - Permalink


Positron affinities and deformation potentials in cubic semiconductors
Panda, B. K.; Brauer, G.;
  • Lecture (Conference)
    30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998
  • Acta Physica Polonica, No. 4, Vol. 95 (1999), 641-646

Publ.-Id: 2261 - Permalink


Hydrogen incorporation into Cu-III-VI2 chalcopyrite semiconductors
Otte, K.; Schlemm, H.; Schindler, A.; Bigl, F.; Lippold, G.; Grambole, D.; Herrmann, F.;
  • Lecture (Conference)
    MRS Spring Meeting, San Francisco, USA, April 13 -17, 1998

Publ.-Id: 2260 - Permalink


Johann Gregorius Höroldt fecit?
Neelmeijer, C.; Mäder, M.; Pietsch, U.; Ulbricht, H.; Walcha, H.-M.;
"J. G. Höroldt fec. et inv": Gemacht und erdacht von Johann Gregorius Höroldt - findet man als Signatur auf dem Boden der prachtvoll dekorierten "Höroldt-Vase" in der Porzellansammlung im Zwinger. Das typische Höroldt-Motiv findet sich wieder auf einem Walzenkrug, ebenfalls aus weißem Porzellan als Träger. Mittels Ionenstrahlanalyse an Luft gelang es am 5 MV Tandembeschleuniger des FZ Rossendorf, zerstörungsfrei aufzuklären, dass die Pigmente der Schmelzfarben auf der Vase der überlieferten "Höroldt'schen Palette" entsprechen. Im Gegensatz dazu wurde z.B. Chrom-Grün am Walzenkrug gefunden, was eindeutig auf eine Kopie hinweist.
Keywords: Ionenstrahlanalyse an Luft, zerstörungsfrei, PIXE, Malfarben, Porzellan
  • Lecture (Conference)
    Jahrestagung der GDCh, Archäometrie und Denkmalpflege, Würzburg, Sept. 23 - 25, 1998
  • Lecture (Conference)
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 78 - 80
  • Contribution to external collection
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 78 - 80

Publ.-Id: 2259 - Permalink


Paramagnetische Störstellen in Si nach Implantation von Pd
Näser, A.; Gelhoff, W.; Yankov, R. A.;
  • Lecture (Conference)
    DPG-Tagung, Regensburg, Germany, March 23, 1998

Publ.-Id: 2258 - Permalink


EPR identification of a shallow donor state of cadmium in silicon
Näser, A.; Gehlhoff, W.; Overhof, H.; Yankov, R. A.;
  • Lecture (Conference)
    8th Int. Conf. on Shallow Level Centres in Semiconductors, Montpellier, France, July 27-30, 1998

Publ.-Id: 2257 - Permalink


Wear properties of TiN coated cutting tools implanted with nitrogen ions
Narojczyk, J.; Piekoszewski, J.; Richter, E.; Werner, Z.;
  • Lecture (Conference)
    ION´98, Kazimierz Dolny, Poland, June 16-19, 1998
  • Nukleonika Vol. 44, No. 21, p. 225-230, 1999

Publ.-Id: 2256 - Permalink


Beam line implantation of boron into hard metals
Mrotschek, I.; Günzel, R.; Matz, W.; Möller, W.; Anishchik, V.;
  • Lecture (Conference)
    ION´98, Kazimierz Dolny, Poland, June 16-19, 1998

Publ.-Id: 2255 - Permalink


Plasma-Immersions-Ionenimplantation
Möller, W.;
  • Invited lecture (Conferences)
    Sommerschule "Nukleare Sonden und Ionenstrahlen", Bad Blankenburg, Sept., 1998 (invited lecture)
  • Lecture (Conference)
    VDE/ITG-Seminar "Teilchenstrahl- und Plasmatechnik", Helmsdorf b. Dresden, March 7, 1997

Publ.-Id: 2254 - Permalink


Schichtanalyse mit Ionenstrahlen
Möller, W.;
  • Invited lecture (Conferences)
    W. E.-Heraeus-Ferienkurs, Chemnitz, Sept. 7, 1998 (invited lecture)

Publ.-Id: 2253 - Permalink


Plasma immersion ion implantation for diffusive treatment
Möller, W.;
  • Invited lecture (Conferences)
    PSE'98, Garmisch-Partenkirchen, Sept. 14 - 18, 1998 (invited lecture)

Publ.-Id: 2252 - Permalink


Vorsorgeuntersuchung an historischem Glas
Mäder, M.; Neelmeijer, C.; Schreiner, M.;
  • Lecture (Conference)
    Jahrestagung der GDCh, Archäometrie und Denkmalpflege, Würzburg, Sept. 23 -25, 1998
  • Lecture (Conference)
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 149 - 151
  • Contribution to external collection
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 149 - 151

Publ.-Id: 2251 - Permalink


Composition analysis of medieval glass using PIXE
Mäder, M.; Neelmeijer, C.; Schreiner, M.;
  • Lecture (Conference)
    8th. Int. Conf. on PIXE and its Analytical applications, Lund, Sweden, June 14-18, 1998

Publ.-Id: 2250 - Permalink


Modeling high temperature co-implantation of N+-and Al+-ions into SiC: the effects of stress on the implant and damage distributions
Kulikov, A. V.; Trushin, Y. V.; Yankov, R. A.; Kreißig, U.; Fukarek, W.; Mücklich, A.; Skorupa, W.; Pezoldt, J.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Publ.-Id: 2249 - Permalink


Theoretical and experimental studies of (AIN)(1-x)(SiC)xlayer structures formed by N+ and Al+ co-implantation 6H-SiC
Kulikov, A. V.; Pezoldt, J.; Rybin, P. V.; Skorupa, W.; Trushin, Y. V.; Yankov, R. A.;
  • Lecture (Conference)
    Int.Workshop Nondestructive Testing and Computer Simulations in Science and Engineering, E 2, St. Petersburg, Russia, June 8 - 12, 1998

Publ.-Id: 2248 - Permalink


Dynamic in-situ diagnostics using ERD analysis
Kruse, O.; Grötzschel, R.;
  • Lecture (Conference)
    ION'98, Kazimierz Dolny, Poland, June 16 - 19, 1998

Publ.-Id: 2247 - Permalink


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