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Modification of magnetic order in Mn5Si3 and Mn5Ge3 by C ion implantation

Sürgers, C.; Joshi, N.; Montbrun, R.; von Löhneysen, H.; Potzger, K.; Möller, W.


Antiferromagnetically ordered Mn5Si3 can be driven ferromagnetic by incorporation of carbon into the voids of Mn octahedra of the hexagonal structure. While for Mn5Si3Cx polycrystals the Curie temperature saturates for x > 0.22 at TC = 152 K [1], sputtered Mn5Si3C0.8 films exhibit a TC above room temperature [2]. An enhancement of TC is also found after C doping of the isostructural compound Mn5Ge3 which is currently in the focus of possible spintronic applications. In an alternative approach, Mn5Si3Cx and Mn5Ge3Cx films were prepared by implantation of 45 - 195 keV C+ ions into Mn5Si3 or Mn5Ge3 films at elevated temperatures. The carbon-implanted samples exhibit magnetic properties very similar to their respective magnetron-sputtered counterparts as inferred from magnetization and resistivity measurements.

Keywords: Magnetic semiconductors; Implantation; Mn5Ge3

  • Lecture (Conference)
    72. Jahrestagung der DPG und DPG Frühjahrstagung des Arbeitskreises Festkörperphysik, 25.-29.2.2008, Berlin, Germany


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