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Advanced heterostructure Si-InSb on insulator formed by bonding of hydrogen transferred Si layer and implanted SiO2 film

Popov, V. P.; Tyschenko, I. E.; Cherkov, A. G.; Pokhil, G. P.; Fridman, V. M.; Voelskow, M.

Abstract

Using bulk silicon may be limited for 22 nm technological node due to silicon mobility limitation. New type of substrates needs for further scaling in CMOS microelectronics. We speculate that this new type of materials can be semiconductor heterostructure on insulator (HOI) compatible with current silicon planar CMOS technology. In this work an effect of interface mediated endotaxial (IME) growth of thin InSb film at Si/SiO2 bonded interface was experimentally observed and investigated for the first time. Joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and endotaxially grown second one (indium antimonide) placed initially into amorphous silicon dioxide film is presented. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered.

Keywords: silicon; heterostructure; InSb

  • ECS Transactions 6(2007)4, 345-350

Permalink: https://www.hzdr.de/publications/Publ-10794