Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications

Investigation of Dwell-Time Effects on the Cobalt Disilicide Formation Using Focused Ion Beam Implantation

Hausmann, S.; Bischoff, L.; Teichert, J.; Grambole, D.; Herrmann, F.; Möller, W.


The influence of dwell-time effects on the formation of CoSi2 layers was investigated. The layers were produced on Si(111) and Si(100) by ion beam synthesis using a focused ion beam system. The experiments show that the dwell-time has a strong influence on the formation process of the cobalt disilicide films. In order to obtain high quality films suitable for applications short dwell-time (about 1µs) are necessary.


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