Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications

Ion Beam Synthesis of Cobalt Disilicide Using Focused Ion Beam Implantation

Teichert, J.; Bischoff, L.; Hausmann, S.


Cobalt disilicid layers were formed by cobalt focused ion beam implantation into silicon. It was found that the CoSi2 layer formation strongly depends on the pixel dwell time. In order to obtain continuous layers, short dwell times of a few ┬Ás are needed. Rutherford backscattering and channeling mesuarements were carried out to understand this effect. The results suggest that the accumulated irradiation damage is larger for longer dwell times. The sputtering yield of cobalt ions was measured and the formation of CoSi2 in noncrystalline silicon investigated.

  • Contribution to proceedings
    Proc. Intern. Seminar "Ion Nanobeams and Applications to Material Processing", Osaka, Nov. 16-20, 1997
  • The Journal of Vacuum Science and Technology B 16(4), Jul/Aug 1998, 2574-2577


Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015