Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication

Defect Production and Evolution During and After Ion Implantation Studied by a Combination of Time-Ordered BCA and MD Simulations

Posselt, M.


A novel method is applied to investigate the as-implanted defect structure formed during keV implantation into Si. It uses a combination of time-ordered computer simulations based on the binary collision approximation (BCA) and classical molecular dynamics (MD) simulations.The as-implanted damage created in 30 keV P+, 15 keV As+, and 15 keV B+ implants is analyzed and depth profiles of different defect species are given.

  • Lecture (Conference)
    12th International Conference on Ion Implantation Technology, June 22-26, 1998, Kyoto/Japan


Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015