Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication

Electrical Characterisation of USJs in doped Si

Ogiewa, M.; Zier, M.; Schmidt, B.


An adaption of the DHE technique, using a stepwise oxidation, as an alternative to e.g. SRP methods as a tool to determine active carrier concentration and mobility depth profiles is presented. As known from the literature, a reduction of dopand activation as well as a decrease of mobility with increasing implantation dose above the solubility limit is observed. The aim is to combine the effects known from the literature in a model system. For industrial purpose, this enables one to find a “sweet spot” of high mobility and active dopand concentration while minimizing the negative effects of a high implantation dose.

Keywords: ultra-shallow pn-junction; charge carrier concentration and mobility; dopand activation

  • Poster
    DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM), 22.-27.03.2009, Dresden, Germany


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