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Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing

Prucnal, S.; Liedke, M. O.; Zhou, S.; Voelskow, M.; Mucklich, A.; Turek, M.; Zuk, J.; Skorupa, W.


The integration of III-V semiconductor material within silicon technology is crucial for performance of advanced electronic devices. This paper presents the investigations of microstructural and opto-electronic properties of GaAs quantum dots (QDs) formed in silicon by means of sequential ion implantation and flash lamp annealing (FLA). Formation of crystalline GaAs QDs with well-defined crystal orientation and conductivity type was confirmed by high resolution transmission electron microscopy and mu-Raman spectroscopy. The influence of the post implantation millisecond-range annealing on the evolution of the nanoparticles size, shape, crystallographic orientation and doping type of GaAs QDs is discussed.

Keywords: GaAs; Quantum dots; Ion implantation; Flash lamp annealing; Silicon

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