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Formation of Ge-0 and GeOx nanoclusters in Ge+-implanted SiO2/Sithin-film heterostructures under rapid thermal annealing

Zatsepin, A. F.; Zatsepin, D. A.; Zhidkov, I. S.; Kurmaev, E. Z.; Fitting, H. J.; Schmidt, B.; Mikhailovich, A. P.; Lawniczak-Jablonska, K.

Abstract

The results of X-ray photoelectron spectra (XPS valence band and core levels) measurements for Ge+ implanted SiO2/Si heterostructures are presented. These heterostructures have a 30 nm thick Ge+ ion implanted amorphous SiO2 layer on p-type Si. The chemical-state transformation of the host-matrix composition after Ge+ ion implantation and rapid thermal annealing (RTA) are discussed. The XPS-analysis performed allows to conclude the formation of Ge-o and GeOx clusters within the samples under study. It was established, that the annealing time strongly affects the degree of oxidation states of Ge-atoms

Keywords: RAY PHOTOELECTRON-SPECTROSCOPY; OXYGEN; LAYERS; FILMS; SI+; CATHODOLUMINESCENCE; TRANSFORMATIONS; SIO2; XPS

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