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Zn-Vacancy Related Defects Identified in ZnO Films Grown by Pulsed Laser Deposition

Ling, F. C.-C.; Wang, Z.; Luo, C.; Anwand, W.; Wagner, A.


Undoped and Cu-doped ZnO grown on sapphire using pulsed laser deposition (PLD) were studied by positron annihilation spectroscopy (PAS), photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM) and secondary ion mass spectroscopy (SIMS). In the undoped samples, two kinds of VZn-related defects, namely VZn1 and VZn2 are identified. VZn1 was identified in as-grown samples grown at relatively low substrate (~300°C). After annealing at 900°C, VZn-2, the green luminescence (GL) peaking at 2.47 eV and the near band edge (NBE) emission at
3.23 eV in the low temperature photoluminescence (LT-PL) were simultaneously introduced. Another kind of VZn-related defect is identified in the Cu-doped ZnO sample, and is tentatively assigned to the VZn decorated with the Cu.

Keywords: pulsed laser deposition PLD; positron annihilation spectroscopy PAS; photoluminescence PL; transmission electron microscopy TEM; secondary ion mass spectroscopy SIMS; ZnO

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