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Local formation of InAs nanocrystals in Si by masked ion implantation and flash lamp annealing

Rebohle, L.; Wutzler, R.; Prucnal, S.; Hübner, R.; Böttger, R.; Georgiev, Y. M.; Erbe, A.; Helm, M.; Skorupa, W.


The integration of high-mobility III-V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this work we investigate the possibilities to form InAs nanocrystals in a thin Si layer at laterally defined positions with the help of masked ion beam implantation and flash lamp annealing. In detail, after thinning of the device layer of a SOI wafer a cladding layer was deposited and patterned by electron beam lithography in order to serve as an implantation mask. The wafer was subsequently implanted with As and In, followed by flash lamp annealing leading to the formation of InAs nanocrystals in the implanted areas. The structures were investigated by Raman spectroscopy, scanning and transmission electron microscopy as well as energy-dispersive X-ray spectroscopy. Depending on the size of the implantation window, several, one or no nanocrystal is formed. Finally, the perspectives for using this technique for the local modification of Si nanowires are discussed.

Keywords: Blitzlampenausheilung; Ionenimplantation; Elektronstrahllithographie; InAs Nanokristalle; flash lamp annealing; ion implantation; electron beam lithography; InAs Nanocrystals

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