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Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Kudrawiec, R.; Polak, M.; Zviagin, V.; Schmidt-Grund, R.; Grundmann, M.; Grenzer, J.; Turek, M.; Droździel, A.; Pyszniak, K.; Zuk, J.; Helm, M.; Skorupa, W.; Zhou, S.


The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy. The n-type single crystalline GeSn alloys are realized by coimplantation of Sn and P into Ge. Both the activation of P and the formation of GeSn are performed during a single-step flash lamp annealing for 3 ms. The bandgap engineering in GeSn as a function of the doping level and Sn concentration is theoretically predicted by density functional theory and experimentally verified using ellipsometric spectroscopy. We demonstrate that both the diffusion and the segregation of Sn and P atoms in Ge are fully suppressed by millisecond-range nonequilibrium thermal processing.

Keywords: ion implantation; flash lamp annealing; Ge; GeSn; n-type doping

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