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Spin polarization and magnetotransport properties of systematically disordered Fe60Al40 thin films

Borisov, K.; Ehrler, J.; Fowley, C.; Eggert, B.; Wende, H.; Cornelius, S.; Potzger, K.; Lindner, J.; Faßbender, J.; Bali, R.; Stamenov, P.


We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of B2-ordered Fe60Al40 thin films under varying antisite disorder, induced by Ne+-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 ⋅ 1016 ions/cm2 at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin polarization and its broad tunability range make ion-irradiated Fe60Al40 a promising material for application in spin electronic devices.

Keywords: Spin polarization; Iron-Aluminium; Spintronics; Anomalous Hall Effect; Topological Hall effect; Irradiation effects; Thin films; Magnetometry; Andreev reflection

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