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Data: Fully encapsulated and stable black phosphorus field-effect transistors

Arora, H.; Fekri, Z.; Vekariya, Y. N.; Chava, P.; Watanabe, K.; Taniguchi, T.; Helm, M.; Erbe, A.


Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.

Keywords: two-dimensional semiconductors; black phosphorus; field-effect transistors; hexagonal boron nitride; encapsulation

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