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Application of focused ion beams for quantum and information technologies

Astakhov, G.


In the first part, we present our recent result on mask-free nanofabrication involving a quasi-deterministic creation of single G- and W-centers in silicon wafers using focused-ion beam (FIB) writing. Using these centers, we implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate telecom single photon emitters at desired positions on the nanoscale In the second part, we present a concept of ultralong, high-density data archiving based on optically active atomic-size defects in silicon carbide (SiC). The information is written in these defects by FIB and read using photoluminescence (PL) or cathodoluminescence (CL). With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs.

Keywords: Quantum technology; Defects; Focused ion beam

Involved research facilities

Related publications

  • Invited lecture (Conferences) (Online presentation)
    Sino-German Symposium Defect Engineering in SiC and Other Wide Bandgap Semiconductor, 23.-24.10.2023, Conference Center, SUSTech, Shenzhen, Guangdong, China


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