Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications

Investigation of ion implantation induced damage in the carbon and silicon sublattices of 6H-SiC

Zolnai, Z.; Khánh, N. Q.; Szilágyi, E.; Kótai, E.; Ster, A.; Posselt, M.; Lohner, T.; Gyulai, J.


Single crystal 6H-SiC samples were irradiated at room temperature with 200 keV Al+ ions at fluences ranging from 3.5x1013 to 2.8x1014 ion/cm2. Depth profiles of crystal defects both in the C and Si sublattices were measured by Backscattering Spectrometry combined with channeling technique (BS/C) at 3550 keV 4He+ ion beam energy along the <0001> axial channeling direction. Damage in the carbon sublattice was found to be higher than in the silicon one. Moreover, C/Si damage ratio decreased with increasing fluence. The crystal defect profiles can be well simulated both by full-cascade SRIM and Crystal-TRIM programs. Effective displacement energies for carbon and silicon sublattices in the applied fluence range of Al implantation were determined by comparing SRIM simulations to BS/C results.

Keywords: Silicon carbide; Ion implantation; Backscattering Spectrometry; Defects

  • Lecture (Conference)
    12th European Conf. on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, September 2-7, 2001, Budapest, Hungary
  • Diamond and Related Materials 11 (2002) 1239-1242


Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015