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Electrical Conductivity of Nitrogen Doped SiC Nanocrystals in Diamond

Weishart, H.; Heera, V.; Skorupa, W.


Nanocrystals of silicon carbide were synthesized inside natural diamond using high dose silicon implantation. In order to retain the diamond structure implantation was done at 900 °C. The samples were subsequently annealed in an rf-heated furnace at 1500 °C for 10 min. A more detailed study on the formation of epitaxially aligned 3C-SiC nanocrystallites within the implanted diamond was published recently[i]. However, investigation of electrical properties was restricted to four-point measurements. Here we will present Hall measurements as function of temperature of the high-fluence Si-implanted diamonds. The results indicate a highly conductive, buried layer inside the diamond. The exceptional high electron concentration may originate in implantation-induced electrical active defects as well as n-type doping by unintentionally co-implanted 28(N2).

[i] H. Weishart, V. Heera, F. Eichhorn, B. Pécz, Á. Barna and
W. Skorupa, J. Appl. Phys. 94 (2003) 1195.

  • Poster
    5. Siliziumkarbid-Rundgespräch, 17.-18.07.2006, Kloster Banz, Staffelstein, Deutschland


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