Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

To study the kinetics of Al ion nitriding, a series of experiments has been performed at fixed ion beam parameters using substrate temperatures varied from 250 °C to 400 °C at intervals of 50 °C. The nitride layers have been analysed by nuclear reaction analysis (NRA), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and scanning electron microscopy (SEM). Depending on the experimental conditions, the nitriding kinetics shows different character: controlled by the delivery of N ions or by the diffusion of Al atoms. Furthermore, the growth of the nitride layer is limited due to the bad layer adhesion. XRD analysis reveals the formation of a hexagonal AlN-phase plus a small fraction of the cubic AlN-phase.