Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy

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Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Wu, H. S.; Brauer, G.; Anwand, W.; Skorupa, W.

Deep level defects in He-implanted n-6H-SiC are studied by deep level transient spectroscopy.

Keywords: deep levels; SiC; defects; DLTS; ion implantation

Lecture (Conference)
Materials Research Society (MRS), 2004 Spring Meeting, 12.-16.04.2004, San Francisco/ CA, USA

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