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The technology platform of the research alliance DRESDEN-concept.

Recent publications in refereed journals

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Ghaderzadeh, S.; Kretschmer, S.; Ghorbani Asl, M.; Hlawacek, G.; Krasheninnikov, A.

Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation

Nanomaterials 11(2021)

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Saretz, S.; Basset, G.; Useini, L.; Laube, M.; Pietzsch, J.; Draca, D. and others

Modulation of γ-secretase activity by a carborane-based flurbiprofen analogue

Molecules 26(2021), 2843

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Assis Dias, F.; Wiedemann, P.; Da Silva, M. J.; Schleicher, E.; Hampel, U.

Combined Finite Element and Electronic Circuit Model of a Wire-Mesh Sensor

IEEE Access (2021)

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Eichler-Volf, A.; Alsaadawi, Y.; Vazquez Luna, F.; Khan, Q. A.; Stierle, S.; Xu, C. and others

Sensitivity of PS/CoPd Janus particles to an external magnetic field

RSC Advances 11(2021), 17051-17057

Gu, B.; Chekhonin, P.; Xin, S. W.; Liu, G. Q.; Ma, C. L.; Zhou, L. and others

Effect of temperature and strain rate on the deformation behavior of Ti5321 during hot-compression

Journal of Alloys and Compounds 876(2021), 159938

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Vogel, K.; Chekhonin, P.; Kaden, C.; Hernández-Mayoral, M.; Akhmadaliev, S.; Bergner, F.

Depth distribution of irradiation-induced dislocation loops in an Fe-9Cr model alloy irradiated with Fe ions: The effect of ion energy

Nuclear Materials and Energy 27(2021), 101007

Nore, C.; Cappanera, L.; Guermond, J.-L.; Weier, T.; Herreman, W.

Feasibility of metal pad roll instability experiments at room temperature

Physical Review Letters 126(2021), 184501

Nikl, J.; Göthel, I.; Kuchařík, M.; Weber, S.; Bussmann, M.

Implicit reduced Vlasov–Fokker–Planck–Maxwell model based on high-order mixed elements

Journal of Computational Physics 434(2021)1, 110214

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Ramzan, M. S.; Kunstmann, J.; Kuc, A. B.

Tuning valleys and wave functions of van der Waals heterostructures by varying the number of layers: A first-principles study

Small (2021)

Tyschenko, I. E.; Voelskow, M.; Si, Z.; Popov, V. P.

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

Semiconductors 55(2021)3, 289-295

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