Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Nanowires (NWs) play an important role as basic components of electronic and photonic devices. Here, theoretical studies using atomistic computer simulations and experi¬mental results are presented on the CMOS-compatible fabrication of metal silicide and semiconductor NWs by focused ion beam (FIB) implantation and subsequent thermal annealing. The FIB implantation along a straight trace leads to a local and surface-near supersaturation in the substrate. Post-implantation annealing causes NW formation by self-organization. It is demonstrated that the evolution of the FIB implantation profile proceeds in three well-separated stages: (1) Phase separation by nucleation and growth, (2) NW formation by coalescence of nanoclusters, (3) NW surface smoothening. Likewise, components for functional devices involving several NWs, like T- or X-junctions, can be obtained by crossing different FIB traces. During long-term thermal annealing, NWs disintegrate into regular chains of nanoparticles (Rayleigh instability) that can be used as surface-plasmon-polariton waveguides. Crosses, corners or ends of NWs are subject to a preferential disintegration. Thus, structures suitable for single-electron-transistors and for multi-gate NW field effect transistors may be fabricated by crossing FIB traces.